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Class Information
Number: 257/321
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Variable threshold (e.g., floating gate memory device) > With floating gate electrode > With additional contacted control electrode > With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling
Description: Subject matter including a thin insulator region for charging of discharging a floating electrode by means of quantum mechanical tunneling of charge carriers.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6624027 Ultra small thin windows in floating gate transistors defined by lost nitride spacers Sep. 23, 2003
6624029 Method of fabricating a self-aligned non-volatile memory cell Sep. 23, 2003
6624467 EEPROM active area castling Sep. 23, 2003
6624468 Semiconductor device including insulated gate field effect transistors Sep. 23, 2003
6621119 Isolated stack-gate flash cell structure and its contactless flash memory arrays Sep. 16, 2003
6614069 Nonvolatile semiconductor memory cell and method for fabricating the memory cell Sep. 2, 2003
6614071 Non-volatile semiconductor memory device Sep. 2, 2003
6608348 Nonvolatile semiconductor memory array with skewed array arrangement Aug. 19, 2003
6605511 Method of forming nitridated tunnel oxide barriers for flash memory technology circuitry and STI and LOCOS isolation Aug. 12, 2003
6605840 Scalable multi-bit flash memory cell and its memory array Aug. 12, 2003
6596587 Shallow junction EEPROM device and process for fabricating the device Jul. 22, 2003
6597037 Programmable memory address decode array with vertical transistors Jul. 22, 2003
6590245 Ferroelectric memory Jul. 8, 2003
6586785 Aerosol silicon nanoparticles for use in semiconductor device fabrication Jul. 1, 2003
6586797 Graded composition gate insulators to reduce tunneling barriers in flash memory devices Jul. 1, 2003
6582998 Method for fabricating nonvolatile semiconductor memory device Jun. 24, 2003
6580119 Stacked gate field effect transistor (FET) device Jun. 17, 2003
6580120 Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structu Jun. 17, 2003
6576949 Integrated circuit having optimized gate coupling capacitance Jun. 10, 2003
6576950 EEPROM type non-volatile memory cell and corresponding production method Jun. 10, 2003
6576951 Four-terminal system for reading the state of a phase qubit Jun. 10, 2003
6573555 Source side injection programming and tip erasing P-channel split gate flash memory cell Jun. 3, 2003
6570213 Self-aligned split-gate flash memory cell and its contactless NOR-type memory array May. 27, 2003
6570214 Scalable stack-gate flash memory cell and its contactless memory array May. 27, 2003
6566277 Liquid-phase growth method, liquid-phase growth apparatus, and solar cell May. 20, 2003
6566706 Semiconductor array of floating gate memory cells and strap regions May. 20, 2003
6566734 Semiconductor device May. 20, 2003
6563166 Flash cell device May. 13, 2003
6563167 Semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges May. 13, 2003
6555865 Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same Apr. 29, 2003
6552386 Scalable split-gate flash memory cell structure and its contactless flash memory arrays Apr. 22, 2003
6548356 Thin film transistor Apr. 15, 2003
6548857 Low resistance contact structure for a select transistor of EEPROM memory cells in a NO-DPCC process Apr. 15, 2003
6545313 EEPROM tunnel window for program injection via P+ contacted inversion Apr. 8, 2003
6538275 Nonvolatile semiconductor memory device and method for fabricating the same Mar. 25, 2003
6538276 Split gate flash memory device with shrunken cell and source line array dimensions Mar. 25, 2003
6538277 Split-gate flash cell Mar. 25, 2003
6531731 Integration of two memory types on the same integrated circuit Mar. 11, 2003
6531734 Self-aligned split-gate flash memory cell having an integrated source-side erase structure and its contactless flash memory arrays Mar. 11, 2003
6528843 Self-aligned split-gate flash memory cell having a single-side tip-shaped floating-gate structure and its contactless flash memory arrays Mar. 4, 2003
6525368 High density flash EEPROM array with source side injection Feb. 25, 2003
6525371 Self-aligned non-volatile random access memory cell and process to make the same Feb. 25, 2003
6521944 Split gate memory cell with a floating gate in the corner of a trench Feb. 18, 2003
6518619 Virtual-ground, split-gate flash memory cell arrangements and method for producing same Feb. 11, 2003
6518620 EEPROM memory cell with increased dielectric integrity Feb. 11, 2003
6514820 Method for forming single electron resistor memory Feb. 4, 2003
6515329 Flash memory device and method of making same Feb. 4, 2003
6509600 Flash memory cell Jan. 21, 2003
6509603 P-channel EEPROM and flash EEPROM devices Jan. 21, 2003
6509604 Nitridation barriers for nitridated tunnel oxide for circuitry for flash technology and for LOCOS/STI isolation Jan. 21, 2003

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