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Class Information
Number: 257/315
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Variable threshold (e.g., floating gate memory device) > With floating gate electrode
Description: Subject matter including a gate electrode which is free of direct electrical connection.










Sub-classes under this class:

Class Number Class Name Patents
257/316 With additional contacted control electrode 2,532
257/323 With means to facilitate light erasure 95


Patents under this class:

Patent Number Title Of Patent Date Issued
8394700 Device including memory array and method thereof Mar. 12, 2013
8390056 Non-volatile semiconductor memory device with intrinsic charge trapping layer Mar. 5, 2013
8390054 Semiconductor memory element and semiconductor memory device Mar. 5, 2013
8390048 Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device Mar. 5, 2013
8385122 Non-volatile memory device having stacked structure, and memory card and electronic system including the same Feb. 26, 2013
8384148 Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling Feb. 26, 2013
8384147 High endurance non-volatile memory cell and array Feb. 26, 2013
8384146 Methods for forming a memory cell having a top oxide spacer Feb. 26, 2013
8378408 Memory devices Feb. 19, 2013
8378407 Floating gate inverter type memory cell and array Feb. 19, 2013
8377826 Fin mask and method for fabricating saddle type fin using the same Feb. 19, 2013
8377774 Split gate type non-volatile semiconductor memory device and method of manufacturing the same Feb. 19, 2013
8373218 Nitride read-only memory cell and method of manufacturing the same Feb. 12, 2013
8373167 RFID tag having non-volatile memory device having floating-gate FETs with different source-gate and drain-gate border lengths Feb. 12, 2013
8372698 Semiconductor device having a modified recess channel gate and a method for fabricating the same Feb. 12, 2013
8369126 Memory device, manufacturing method for memory device and method for data writing Feb. 5, 2013
8368139 Semiconductor device comprising transistor structures and methods for forming same Feb. 5, 2013
8368138 Non-volatile memory devices and methods of manufacturing the same Feb. 5, 2013
8368137 Dual bit line metal layers for non-volatile memory Feb. 5, 2013
8367493 Void free interlayer dielectric Feb. 5, 2013
8362542 Semiconductor devices comprising a plurality of gate structures Jan. 29, 2013
8357967 Methods of forming memory cells Jan. 22, 2013
8357965 Semiconductor device having multiple storage regions Jan. 22, 2013
8354705 Non-volatile NAND memory semiconductor integrated circuit Jan. 15, 2013
8354704 Method for fabricating an enlarged oxide-nitride-oxide structure for NAND flash memory semiconductor devices Jan. 15, 2013
8351254 Semiconductor device Jan. 8, 2013
8350387 Semiconductor device and semiconductor storage device Jan. 8, 2013
8350315 Memory devices capable of reducing lateral movement of charges Jan. 8, 2013
8350314 Semiconductor memory device and method for fabricating semiconductor memory device Jan. 8, 2013
8350313 Nonvolatile memory transistor Jan. 8, 2013
8350312 Semiconductor device Jan. 8, 2013
8350291 Modulation-doped multi-gate devices Jan. 8, 2013
8344445 Non-volatile semiconductor memory cell with dual functions Jan. 1, 2013
8344440 Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times Jan. 1, 2013
8338877 Nonvolatile memory devices and methods of forming the same Dec. 25, 2012
8338876 Non-volatile semiconductor storage device and method of manufacturing the same Dec. 25, 2012
8338875 Nonvolatile memory Dec. 25, 2012
8338244 Methods of fabricating three-dimensional nonvolatile memory devices using expansions Dec. 25, 2012
8334560 Reverse disturb immune asymmetrical sidewall floating gate devices Dec. 18, 2012
8330204 Non-volatile NAND memory semiconductor integrated circuit Dec. 11, 2012
8330203 Nonvolatile semiconductor memory device in which decrease in coupling ratio of memory cells is suppressed Dec. 11, 2012
8330202 Germanium-silicon-carbide floating gates in memories Dec. 11, 2012
8325524 Semiconductor device Dec. 4, 2012
8325516 Semiconductor device with split gate memory cell and fabrication method thereof Dec. 4, 2012
8324676 Memory cell storage node length Dec. 4, 2012
8324675 Flash memory device having vertical channel structure Dec. 4, 2012
8319270 Semiconductor device and method for manufacturing the same Nov. 27, 2012
8319268 Semiconductor device capable of suppressing short channel effect Nov. 27, 2012
8319267 Device including nonvolatile memory element Nov. 27, 2012
8319266 Etch stop layer for memory cell reliability improvement Nov. 27, 2012











 
 
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