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Class Information
Number: 257/315
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Variable threshold (e.g., floating gate memory device) > With floating gate electrode
Description: Subject matter including a gate electrode which is free of direct electrical connection.










Sub-classes under this class:

Class Number Class Name Patents
257/316 With additional contacted control electrode 2,565
257/323 With means to facilitate light erasure 96


Patents under this class:

Patent Number Title Of Patent Date Issued
8541831 Nonvolatile memory device and method for fabricating the same Sep. 24, 2013
8541830 Nonvolatile semiconductor memory device and method for manufacturing the same Sep. 24, 2013
8541829 Nonvolatile semiconductor memory and fabrication method for the same Sep. 24, 2013
8541285 Semiconductor memory device and method for manufacturing the same Sep. 24, 2013
8536639 I-shape floating gate for flash memory device and fabricating the same Sep. 17, 2013
8536638 Method of manufacturing a semiconductor device having lower leakage current between semiconductor substrate and bit lines Sep. 17, 2013
8536637 Array architecture for embedded flash memory devices Sep. 17, 2013
8530959 Three-dimensional semiconductor memory device Sep. 10, 2013
8530952 Systems, methods and devices for a memory having a buried select line Sep. 10, 2013
8530310 Memory cell with improved retention Sep. 10, 2013
8525271 Semiconductor structure with improved channel stack and method for fabrication thereof Sep. 3, 2013
8525255 Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination Sep. 3, 2013
8525249 Semiconductor memory device and method of fabricating the same Sep. 3, 2013
8525248 Memory cell comprising a floating body, a channel region, and a diode Sep. 3, 2013
8525247 Non-volatile memory device having variable resistance element Sep. 3, 2013
8525246 Semiconductor storage device and method of manufacturing the same Sep. 3, 2013
8519466 Tantalum silicon oxynitride high-K dielectrics and metal gates Aug. 27, 2013
8519451 Semiconductor device Aug. 27, 2013
8513808 Semiconductor device having trench-isolated element formation region Aug. 20, 2013
8513726 EEPROM with increased reading speed Aug. 20, 2013
8508047 Buried word line memory integrated circuit system Aug. 13, 2013
8507971 Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins Aug. 13, 2013
8507969 Method and system for providing contact to a first polysilicon layer in a flash memory device Aug. 13, 2013
8503229 P-/Metal floating gate non-volatile storage element Aug. 6, 2013
8502296 Non-volatile memory cell with asymmetrical split gate and related system and method Aug. 6, 2013
8502295 Nonvolatile memory device Aug. 6, 2013
8497582 Nonvolatile semiconductor memory having a word line bent towards a select gate line side Jul. 30, 2013
8497545 Method of forming nonvolatile memory device having floating gate and related device Jul. 30, 2013
8497543 Semiconductor memory device and method for manufacturing same Jul. 30, 2013
8492848 Application of cluster beam implantation for fabricating threshold voltage adjusted FETs Jul. 23, 2013
8487381 Protection element and semiconductor device having the protection element Jul. 16, 2013
8482057 Circuit and method for a three dimensional non-volatile memory Jul. 9, 2013
8482052 Silicon on insulator and thin film transistor bandgap engineered split gate memory Jul. 9, 2013
8482051 3D nonvolatile memory device including a plurality of channel contacts coupled to a plurality of channel layers and a plurality of section lines coupled to the plurality of channel contacts an Jul. 9, 2013
8482050 Flash memory with recessed floating gate Jul. 9, 2013
8482039 Memory and interconnect design in fine pitch Jul. 9, 2013
8481388 Non-volatile memory device having a nitride-oxide dielectric layer Jul. 9, 2013
8481387 Method of forming an insulation structure and method of manufacturing a semiconductor device using the same Jul. 9, 2013
8476721 Magnet-assisted transistor devices Jul. 2, 2013
8476718 Semiconductor device including a gate insulating film having a metal oxide layer having trap levels Jul. 2, 2013
8476692 Semiconductor devices and methods of manufacturing the same Jul. 2, 2013
8476691 High reliability-high voltage junction termination with charge dissipation layer Jul. 2, 2013
8471324 Semiconductor device Jun. 25, 2013
8471323 3-D electrically programmable and erasable single-transistor non-volatile semiconductor memory device Jun. 25, 2013
8471319 Semiconductor device having multilayered interelectrode insulating film Jun. 25, 2013
8466508 Non-volatile memory structure including stress material between stacked patterns Jun. 18, 2013
8466507 Semiconductor device and a method of manufacturing the same Jun. 18, 2013
8466506 Nonvolatile semiconductor memory device and method of manufacturing the same Jun. 18, 2013
8466505 Multi-level flash memory cell capable of fast programming Jun. 18, 2013
8462547 Offset non-volatile storage Jun. 11, 2013











 
 
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