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Class Information
Number: 257/314
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Variable threshold (e.g., floating gate memory device)
Description: Subject matter wherein the device has a threshold voltage for current conduction which may be varied (e.g., by storage of charge in an insulator layer adjacent the channel in response to an electrical "write" signal).


Sub-classes under this class:

Class Number Class Name Patents
257/324 Multiple insulator layers (e.g., mnos structure) 834
257/315 With floating gate electrode 2,010


Patents under this class:

Patent Number Title Of Patent Date Issued
7618863 Method of fabricating flash memory device with increased coupling ratio Nov. 17, 2009
7618861 Method of manufacturing non-volatile memory device using multiple element isolation regions and perpendicular extensive device regions Nov. 17, 2009
7615820 Self-aligned trenches with grown dielectric for high coupling ratio in semiconductor devices Nov. 10, 2009
7615819 Semiconductor device Nov. 10, 2009
7615818 Semiconductor device and method of manufacturing the same Nov. 10, 2009
7615446 Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof Nov. 10, 2009
7612411 Dual-gate device and method Nov. 3, 2009
7612403 Low power non-volatile memory and gate stack Nov. 3, 2009
7612401 Non-volatile memory cell Nov. 3, 2009
7611946 Method of fabricating a non-volatile memory device Nov. 3, 2009
7608882 Split-gate non-volatile memory Oct. 27, 2009
7605430 Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same Oct. 20, 2009
7605420 Semiconductor tunneling magneto resistance device and method of manufacturing the same Oct. 20, 2009
7605419 Flash memory device and fabricating method thereof Oct. 20, 2009
7605044 Method of manufacturing semiconductor device Oct. 20, 2009
7602029 Configuration and method of manufacturing the one-time programmable (OTP) memory cells Oct. 13, 2009
7598561 NOR flash memory Oct. 6, 2009
7598560 Hetero-bimos injection process for non-volatile flash memory Oct. 6, 2009
7595532 Semiconductor memory devices and methods of forming the same Sep. 29, 2009
7595522 Nonvolatile semiconductor memory Sep. 29, 2009
7590004 Nonvolatile semiconductor memory having a plurality of interconnect layers Sep. 15, 2009
7589376 Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same Sep. 15, 2009
7589373 Semiconductor device Sep. 15, 2009
7589372 Nonvolatile memory device and method for fabricating the same Sep. 15, 2009
7589371 Semiconductor device and fabrication method therefor Sep. 15, 2009
7586150 Semiconductor devices with local recess channel transistors and methods of manufacturing the same Sep. 8, 2009
7586145 EEPROM flash memory device with jagged edge floating gate Sep. 8, 2009
7586144 Memory device with high dielectric constant gate dielectrics and metal floating gates Sep. 8, 2009
7583534 Memory utilizing oxide-conductor nanolaminates Sep. 1, 2009
7582927 Flash EEPROM cell and method of fabricating the same Sep. 1, 2009
7582926 Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus Sep. 1, 2009
7582526 Method for manufacturing semiconductor device Sep. 1, 2009
7580279 Flash memory cells with reduced distances between cell elements Aug. 25, 2009
7579646 Flash memory with deep quantum well and high-K dielectric Aug. 25, 2009
7579645 Semiconductor device having non-volatile memory cell Aug. 25, 2009
7573095 Memory cells with improved program/erase windows Aug. 11, 2009
7573089 Non-volatile memory device Aug. 11, 2009
7572700 EEPROM and method of manufacturing the same Aug. 11, 2009
7569882 Non-volatile multibit memory cell and method of manufacturing thereof Aug. 4, 2009
7569879 Nonvolatile semiconductor memory device and manufacturing method thereof Aug. 4, 2009
7569454 Semiconductor device manufacturing method using strip-like gate electrode hard masks for ion implantation Aug. 4, 2009
7569284 Incorporation of nitrogen into high k dielectric film Aug. 4, 2009
7566928 Byte-operational nonvolatile semiconductor memory device Jul. 28, 2009
7566927 Flash memory device Jul. 28, 2009
7566615 Methods of fabricating scalable two transistor memory devices Jul. 28, 2009
7564093 Semiconductor device Jul. 21, 2009
7564092 Flash memory device having a split gate Jul. 21, 2009
7564091 Memory device and methods for its fabrication Jul. 21, 2009
7564090 Transistor of a semiconductor device Jul. 21, 2009
7560767 Nonvolatile semiconductor memory device Jul. 14, 2009



 
 
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