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Class Information
Number: 257/306
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) > Stacked capacitor
Description: Subject matter wherein the capacitor device contains a number of capacitor electrode regions overlying each other or where the capacitor and the transistor are located such that one overlies the other.

Sub-classes under this class:

Class Number Class Name Patents
257/307 Parallel interleaved capacitor electrode pairs (e.g., interdigitized) 373
257/309 With increased effective electrode surface area (e.g., tortuous path, corrugated, or textured electrodes) 701

Patents under this class:

Patent Number Title Of Patent Date Issued
8710570 Semiconductor device having vertical channel Apr. 29, 2014
8710569 Semiconductor device and manufacturing method thereof Apr. 29, 2014
8710567 Semiconductor device and manufacturing method thereof Apr. 29, 2014
8710564 Semiconductor device including insulating layer of cubic system or tetragonal system Apr. 29, 2014
8704285 Capacitor device and display apparatus having the same Apr. 22, 2014
8704283 Semiconductor devices Apr. 22, 2014
8680650 Capacitor structures having improved area efficiency Mar. 25, 2014
8680649 Multi-layer film capacitor with tapered film sidewalls Mar. 25, 2014
8680600 Vertical transistor structure and method of manufacturing same Mar. 25, 2014
8680599 Semiconductor device and method of manufacturing the same Mar. 25, 2014
8680595 Sleeve insulators and semiconductor device including the same Mar. 25, 2014
8652855 Low resistance stacked annular contact Feb. 18, 2014
8644048 Semiconductor device Feb. 4, 2014
8643075 Semiconductor device having glue layer and supporter Feb. 4, 2014
8637912 Vertical gate device with reduced word line resistivity Jan. 28, 2014
8633531 Semiconductor device Jan. 21, 2014
8633528 Methods and apparatus for increasing memory density using diode layer sharing Jan. 21, 2014
8629033 Method for manufacturing semiconductor device Jan. 14, 2014
8628981 Method of manufacturing a ferroelectric-capacitor memory device including recovery annealing Jan. 14, 2014
8614472 Systems and methods for adjusting ultra-small metal-oxide-metal capacitors Dec. 24, 2013
8614471 Collections of laterally crystallized semiconductor islands for use in thin film transistors Dec. 24, 2013
8614122 Formation of a channel semiconductor alloy by forming a hard mask layer stack and applying a plasma-based mask patterning process Dec. 24, 2013
8610191 Semiconductor devices and dynamic random access memory devices including buried gate pattern with high-k capping layer Dec. 17, 2013
8610189 Semiconductor device enabling further microfabrication Dec. 17, 2013
8604531 Method and apparatus for improving capacitor capacitance and compatibility Dec. 10, 2013
8598643 Nonvolatile semiconductor memory device and method of manufacturing the same Dec. 3, 2013
8594604 Fringe capacitor circuit Nov. 26, 2013
8592979 Semiconductor device conductive pattern structures and methods of manufacturing the same Nov. 26, 2013
8581319 Semiconductor stacks including catalytic layers Nov. 12, 2013
8581318 Enhanced non-noble electrode layers for DRAM capacitor cell Nov. 12, 2013
8581315 Semiconductor device having cylindrical lower electrode of capacitor and manufacturing method thereof Nov. 12, 2013
8575688 Trench device structure and fabrication Nov. 5, 2013
8575683 Semiconductor device and method of fabricating the same Nov. 5, 2013
8575671 Asymmetric MIM capacitor for DRAM devices Nov. 5, 2013
8575668 Charge breakdown avoidance for MIM elements in SOI base technology and method Nov. 5, 2013
8574997 Method of using a catalytic layer to enhance formation of a capacitor stack Nov. 5, 2013
8569820 Capacitor having a plurality of parallel conductive members Oct. 29, 2013
8569819 Doped electrodes for DRAM applications Oct. 29, 2013
8569818 Blocking layers for leakage current reduction in DRAM devices Oct. 29, 2013
8563390 Semiconductor devices and methods of fabricating the same Oct. 22, 2013
8562868 Ternary metal transition metal non-oxide nano-particles, methods and applications thereof Oct. 22, 2013
8559216 Nonvolatile semiconductor memory device Oct. 15, 2013
8558294 Semiconductor device and fabrication process thereof Oct. 15, 2013
8552486 Forming metal-insulator-metal capacitors over a top metal layer Oct. 8, 2013
8541868 Top electrode templating for DRAM capacitor Sep. 24, 2013
8541282 Blocking layers for leakage current reduction in DRAM devices Sep. 24, 2013
8519461 Device with post-contact back end of line through-hole via integration Aug. 27, 2013
8513723 Method and structure for forming high performance MOS capacitor along with fully depleted semiconductor on insulator devices on the same chip Aug. 20, 2013
8507355 Manufacturing method of a high performance metal-oxide-metal Aug. 13, 2013
8497565 Multiple electrode layer backend stacked capacitor Jul. 30, 2013

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