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Class Information
Number: 257/305
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) > Capacitor in trench > With means to insulate adjacent storage nodes (e.g., channel stops or field oxide)
Description: Subject matter including means for electrically insulating an electrode upon which the charge varies as an indication of the memory state of the device (e.g., a memory cell).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7564093 |
Semiconductor device |
Jul. 21, 2009 |
| 7541634 |
Trench capacitor |
Jun. 2, 2009 |
| 7508022 |
Semiconductor device including a TCAM having a storage element formed with a DRAM |
Mar. 24, 2009 |
| 7498627 |
Semiconductor device including a TCAM having a storage element formed with a DRAM |
Mar. 3, 2009 |
| 7485905 |
Electrostatic discharge protection device |
Feb. 3, 2009 |
| 7459731 |
Device containing isolation regions with threading dislocations |
Dec. 2, 2008 |
| 7456459 |
Design of low inductance embedded capacitor layer connections |
Nov. 25, 2008 |
| 7442981 |
Capacitor of semiconductor device and method of fabricating the same |
Oct. 28, 2008 |
| 7417277 |
Semiconductor integrated circuit and method of manufacturing the same |
Aug. 26, 2008 |
| 7416952 |
Method for producing a dielectric interlayer and storage capacitor with such a dielectric interlayer |
Aug. 26, 2008 |
| 7375376 |
Semiconductor display device and method of manufacturing the same |
May. 20, 2008 |
| 7339224 |
Trench capacitor and corresponding method of production |
Mar. 4, 2008 |
| 7326990 |
Semiconductor device and method for fabricating the same |
Feb. 5, 2008 |
| 7319254 |
Semiconductor memory device having resistor and method of fabricating the same |
Jan. 15, 2008 |
| 7298000 |
Conductive container structures having a dielectric cap |
Nov. 20, 2007 |
| 7268384 |
Semiconductor substrate having first and second pairs of word lines |
Sep. 11, 2007 |
| 7256440 |
Semiconductor memory cell having a trench and a planar selection transistor and method for producing the same |
Aug. 14, 2007 |
| 7253052 |
Method for forming a storage cell capacitor compatible with high dielectric constant materials |
Aug. 7, 2007 |
| 7250650 |
Field-effect transistor structure and associated semiconductor memory cell |
Jul. 31, 2007 |
| 7247906 |
Semiconductor devices having DRAM cells and methods of fabricating the same |
Jul. 24, 2007 |
| 7244982 |
Semiconductor device using a conductive film and method of manufacturing the same |
Jul. 17, 2007 |
| 7230300 |
Semiconductor device with peripheral trench |
Jun. 12, 2007 |
| 7199415 |
Conductive container structures having a dielectric cap |
Apr. 3, 2007 |
| 7180121 |
Semiconductor device and method of manufacturing the same |
Feb. 20, 2007 |
| 7180122 |
Semiconductor device and method for fabricating the same |
Feb. 20, 2007 |
| 7151290 |
Semiconductor memory device and method of manufacturing the same |
Dec. 19, 2006 |
| 7138677 |
Capacitor arrangement with capacitors arranged one in the other |
Nov. 21, 2006 |
| 7138678 |
Enhanced on-chip decoupling capacitors and method of making same |
Nov. 21, 2006 |
| 7135731 |
Vertical DRAM and fabrication method thereof |
Nov. 14, 2006 |
| 7119390 |
Dynamic random access memory and fabrication thereof |
Oct. 10, 2006 |
| 7112822 |
Semiconductor device using partial SOI substrate and manufacturing method thereof |
Sep. 26, 2006 |
| 7105884 |
Memory circuitry with plurality of capacitors received within an insulative layer well |
Sep. 12, 2006 |
| 7102204 |
Integrated SOI fingered decoupling capacitor |
Sep. 5, 2006 |
| 7078756 |
Collarless trench DRAM device |
Jul. 18, 2006 |
| 7042047 |
Memory cell, array, device and system with overlapping buried digit line and active area and method for forming same |
May. 9, 2006 |
| 7034352 |
DRAM with very shallow trench isolation |
Apr. 25, 2006 |
| 7030440 |
Single poly-si process for DRAM by deep N-well (NW) plate |
Apr. 18, 2006 |
| 7019379 |
Semiconductor device comprising voltage regulator element |
Mar. 28, 2006 |
| 7018854 |
Semiconductor device and method for manufacturing the same |
Mar. 28, 2006 |
| 7015526 |
Dynamic memory cell and method of manufacturing same |
Mar. 21, 2006 |
| 7015533 |
Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions |
Mar. 21, 2006 |
| 7009236 |
Memory device with vertical transistors and deep trench capacitors and method of fabricating the same |
Mar. 7, 2006 |
| 7002210 |
Semiconductor device including a high-breakdown voltage MOS transistor |
Feb. 21, 2006 |
| 7002196 |
Ferroelectric capacitor devices and FeRAM devices |
Feb. 21, 2006 |
| 6998666 |
Nitrided STI liner oxide for reduced corner device impact on vertical device performance |
Feb. 14, 2006 |
| 6989561 |
Trench capacitor structure |
Jan. 24, 2006 |
| 6982466 |
Semiconductor devices including a silicide layer |
Jan. 3, 2006 |
| 6977197 |
Semiconductor devices having DRAM cells and methods of fabricating the same |
Dec. 20, 2005 |
| 6972451 |
Trench capacitor in a substrate with two floating electrodes independent from the substrate |
Dec. 6, 2005 |
| 6953961 |
DRAM structure and fabricating method thereof |
Oct. 11, 2005 |
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