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Class Information
Number: 257/301
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) > Capacitor in trench
Description: Subject matter wherein the capacitor is located in a recess in the semiconductor substrate.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619271 |
Deep trench device with single sided connecting structure and fabrication method thereof |
Nov. 17, 2009 |
| 7615816 |
Buried plate structure for vertical dram devices |
Nov. 10, 2009 |
| 7612399 |
Semiconductor integrated circuit devices |
Nov. 3, 2009 |
| 7608881 |
Thin-film device and method of manufacturing same |
Oct. 27, 2009 |
| 7608876 |
Merged MOS-bipolar capacitor memory cell |
Oct. 27, 2009 |
| 7605418 |
Methods of fabricating capacitor |
Oct. 20, 2009 |
| 7605034 |
Integrated circuit memory cells and methods of forming |
Oct. 20, 2009 |
| 7598575 |
Semiconductor die with reduced RF attenuation |
Oct. 6, 2009 |
| 7592220 |
Capacitance process using passivation film scheme |
Sep. 22, 2009 |
| 7588984 |
Method to define a transistor gate of a DRAM and the transistor gate using same |
Sep. 15, 2009 |
| 7586142 |
Semiconductor device having metal-insulator-metal capacitor and method of fabricating the same |
Sep. 8, 2009 |
| 7582924 |
Semiconductor devices having polymetal gate electrodes |
Sep. 1, 2009 |
| 7582902 |
Raw material carbon composition for carbon material for electrode in electric double layer capacitor |
Sep. 1, 2009 |
| 7582525 |
Method for fabricating capacitor of semiconductor memory device using amorphous carbon |
Sep. 1, 2009 |
| 7579234 |
Method for fabricating memory device with recess channel MOS transistor |
Aug. 25, 2009 |
| 7576440 |
Semiconductor chip having bond pads and multi-chip package |
Aug. 18, 2009 |
| 7576381 |
Memory structure and fabricating method thereof |
Aug. 18, 2009 |
| 7575971 |
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same |
Aug. 18, 2009 |
| 7569878 |
Fabricating a memory cell array |
Aug. 4, 2009 |
| 7569451 |
Method of fabricating an isolation shallow trench |
Aug. 4, 2009 |
| 7566619 |
Methods of forming integrated circuit devices having field effect transistors of different types in different device regions |
Jul. 28, 2009 |
| 7564086 |
Self-aligned, silicided, trench-based DRAM/eDRAM processes with improved retention |
Jul. 21, 2009 |
| 7563669 |
Integrated circuit with a trench capacitor structure and method of manufacture |
Jul. 21, 2009 |
| 7560764 |
SONOS memory device having curved surface and method for fabricating the same |
Jul. 14, 2009 |
| 7560761 |
Semiconductor structure including trench capacitor and trench resistor |
Jul. 14, 2009 |
| 7560359 |
Methods of forming asymmetric recesses and gate structures that fill such recesses and related methods of forming semiconductor devices that include such recesses and gate structures |
Jul. 14, 2009 |
| 7554148 |
Pick-up structure for DRAM capacitors |
Jun. 30, 2009 |
| 7547977 |
Semiconductor chip having bond pads |
Jun. 16, 2009 |
| 7541682 |
Semiconductor chip having bond pads |
Jun. 2, 2009 |
| 7541634 |
Trench capacitor |
Jun. 2, 2009 |
| 7535695 |
DRAM cells and electronic systems |
May. 19, 2009 |
| 7535045 |
Checkerboard deep trench dynamic random access memory cell array layout |
May. 19, 2009 |
| 7534692 |
Process for producing an integrated circuit comprising a capacitor |
May. 19, 2009 |
| 7531871 |
Power semiconductor switching element |
May. 12, 2009 |
| 7531861 |
Trench capacitors with insulating layer collars in undercut regions |
May. 12, 2009 |
| 7525142 |
Semiconductor device including a conductive layer buried in an opening and method of manufacturing the same |
Apr. 28, 2009 |
| 7521748 |
Method to eliminate arsenic contamination in trench capacitors |
Apr. 21, 2009 |
| 7521740 |
Semiconductor device comprising extensions produced from material with a low melting point |
Apr. 21, 2009 |
| 7501676 |
High density semiconductor memory |
Mar. 10, 2009 |
| 7495275 |
Semiconductor device and dram integrated circuit device |
Feb. 24, 2009 |
| 7494891 |
Trench capacitor with void-free conductor fill |
Feb. 24, 2009 |
| 7494890 |
Trench capacitor and method for manufacturing the same |
Feb. 24, 2009 |
| 7489002 |
Memory having a vertical transistor |
Feb. 10, 2009 |
| 7489000 |
Capacitor structures with oxynitride layer between capacitor plate and capacitor dielectric layer |
Feb. 10, 2009 |
| 7485910 |
Simplified vertical array device DRAM/eDRAM integration: method and structure |
Feb. 3, 2009 |
| 7485909 |
Semiconductor device and method of manufacturing the same |
Feb. 3, 2009 |
| 7479424 |
Method for fabricating an integrated circuit comprising a three-dimensional capacitor |
Jan. 20, 2009 |
| 7476923 |
Memory device and fabrication thereof |
Jan. 13, 2009 |
| 7476922 |
Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same |
Jan. 13, 2009 |
| 7473953 |
Method for fabricating metallic bit-line contacts |
Jan. 6, 2009 |
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