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Class Information
Number: 257/3
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device > Bulk effect switching in amorphous material > With means to localize region of conduction (e.g., "pore" structure)
Description: Subject matter wherein means (e.g., a porous structure) is provided to confine the operating current to a particular region of the bulk effect amorphous material.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619237 |
Programmable resistive memory cell with self-forming gap |
Nov. 17, 2009 |
| 7615771 |
Memory array having memory cells formed from metallic material |
Nov. 10, 2009 |
| 7615769 |
Nonvolatile memory device and fabrication method thereof |
Nov. 10, 2009 |
| 7612358 |
Nonvolatile nanochannel memory device using mesoporous material |
Nov. 3, 2009 |
| 7612359 |
Microelectronic devices using sacrificial layers and structures fabricated by same |
Nov. 3, 2009 |
| 7612360 |
Non-volatile memory devices having cell diodes |
Nov. 3, 2009 |
| 7608848 |
Bridge resistance random access memory device with a singular contact structure |
Oct. 27, 2009 |
| 7608851 |
Switch array circuit and system using programmable via structures with phase change materials |
Oct. 27, 2009 |
| 7598112 |
Phase change memory devices and their methods of fabrication |
Oct. 6, 2009 |
| 7592617 |
Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method |
Sep. 22, 2009 |
| 7589342 |
Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same |
Sep. 15, 2009 |
| 7589344 |
Semiconductor device and method of producing the same |
Sep. 15, 2009 |
| 7586777 |
Resistance variable memory with temperature tolerant materials |
Sep. 8, 2009 |
| 7582546 |
Device with damaged breakdown layer |
Sep. 1, 2009 |
| 7582890 |
Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof |
Sep. 1, 2009 |
| 7575776 |
Reflowing of a phase changeable memory element to close voids therein |
Aug. 18, 2009 |
| 7576350 |
Programmable resistance memory element with multi-regioned contact |
Aug. 18, 2009 |
| 7577024 |
Streaming mode programming in phase change memories |
Aug. 18, 2009 |
| 7573058 |
Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories |
Aug. 11, 2009 |
| 7569845 |
Phase-change memory and fabrication method thereof |
Aug. 4, 2009 |
| 7566895 |
Phase change memory device and method for fabricating the same |
Jul. 28, 2009 |
| 7560724 |
Storage device with reversible resistance change elements |
Jul. 14, 2009 |
| 7550823 |
Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same |
Jun. 23, 2009 |
| 7551476 |
Resistive memory having shunted memory cells |
Jun. 23, 2009 |
| 7550756 |
Semiconductor memory |
Jun. 23, 2009 |
| 7547905 |
Programmable conductor memory cell structure and method therefor |
Jun. 16, 2009 |
| 7547906 |
Multi-functional chalcogenide electronic devices having gain |
Jun. 16, 2009 |
| 7545667 |
Programmable via structure for three dimensional integration technology |
Jun. 9, 2009 |
| 7541607 |
Electrically rewritable non-volatile memory element and method of manufacturing the same |
Jun. 2, 2009 |
| 7541608 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells |
Jun. 2, 2009 |
| 7539038 |
Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material |
May. 26, 2009 |
| 7538337 |
Nanowire semiconductor device |
May. 26, 2009 |
| 7531824 |
High value inductor with conductor surrounded by high permeability polymer formed on a semiconductor substrate |
May. 12, 2009 |
| 7531825 |
Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
May. 12, 2009 |
| 7525117 |
Chalcogenide devices and materials having reduced germanium or telluruim content |
Apr. 28, 2009 |
| 7521704 |
Memory device using multi-layer with a graded resistance change |
Apr. 21, 2009 |
| 7521706 |
Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same |
Apr. 21, 2009 |
| 7521705 |
Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
Apr. 21, 2009 |
| 7521372 |
Method of fabrication of phase-change memory |
Apr. 21, 2009 |
| 7514706 |
Voltage reference circuit using programmable metallization cells |
Apr. 7, 2009 |
| 7507985 |
Phase change memory and phase change recording medium |
Mar. 24, 2009 |
| 7501307 |
Method of fabricating semiconductor memory device |
Mar. 10, 2009 |
| 7501648 |
Phase change materials and associated memory devices |
Mar. 10, 2009 |
| 7498064 |
Laser reflowing of phase changeable memory element to close a void therein |
Mar. 3, 2009 |
| 7498601 |
Phase-change memory device and method of manufacturing same |
Mar. 3, 2009 |
| 7491964 |
Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process |
Feb. 17, 2009 |
| 7491962 |
Resistance variable memory device with nanoparticle electrode and method of fabrication |
Feb. 17, 2009 |
| 7488968 |
Multilevel phase change memory |
Feb. 10, 2009 |
| 7488967 |
Structure for confining the switching current in phase memory (PCM) cells |
Feb. 10, 2009 |
| 7485487 |
Phase change memory cell with electrode |
Feb. 3, 2009 |
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