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Class Information
Number: 257/3
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device > Bulk effect switching in amorphous material > With means to localize region of conduction (e.g., "pore" structure)
Description: Subject matter wherein means (e.g., a porous structure) is provided to confine the operating current to a particular region of the bulk effect amorphous material.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710478 Nonvolatile semiconductor storage device and a manufacturing method thereof Apr. 29, 2014
8710480 Phase-change memory device having multiple diodes Apr. 29, 2014
8710481 Non-volatile memory cell containing a nano-rail electrode Apr. 29, 2014
8710482 Memory component and memory device Apr. 29, 2014
8704203 Transition metal oxide bilayers Apr. 22, 2014
8692222 Nonvolatile memory element and method of manufacturing the nonvolatile memory element Apr. 8, 2014
8686391 Pore phase change material cell fabricated from recessed pillar Apr. 1, 2014
8686390 Nonvolatile memory element having a variable resistance layer whose resistance value changes according to an applied electric signal Apr. 1, 2014
8686389 Diffusion barrier layer for resistive random access memory cells Apr. 1, 2014
8685786 Method of manufacturing a semiconductor memory device having a resistance change memory layer Apr. 1, 2014
8686386 Nonvolatile memory device using a varistor as a current limiter element Apr. 1, 2014
8680505 Semiconductor memory device Mar. 25, 2014
8680499 Memory cells Mar. 25, 2014
8680502 Amorphous semiconductor layer memory device Mar. 25, 2014
8674336 Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays Mar. 18, 2014
8674334 Memory elements using self-aligned phase change material layers and methods of manufacturing same Mar. 18, 2014
8673692 Charging controlled RRAM device, and methods of making same Mar. 18, 2014
8669628 Magnetoresistive element and magnetic memory using the same Mar. 11, 2014
8658463 Memristor with embedded switching layer Feb. 25, 2014
8658476 Low temperature P+ polycrystalline silicon material for non-volatile memory device Feb. 25, 2014
8658998 Semiconductor storage device Feb. 25, 2014
8658999 Semiconductor device Feb. 25, 2014
8653493 Variable resistance memory devices and methods of manufacturing the same Feb. 18, 2014
8653495 Heating phase change material Feb. 18, 2014
8649213 Multiple bit phase change memory cell Feb. 11, 2014
8648324 Glassy carbon nanostructures Feb. 11, 2014
8648323 Nonvolatile memory device and method of fabricating the same Feb. 11, 2014
8633464 In via formed phase change memory cell with recessed pillar heater Jan. 21, 2014
8633465 Multilevel resistive memory having large storage capacity Jan. 21, 2014
8629421 Memory cells Jan. 14, 2014
8624219 Variable impedance memory element structures, methods of manufacture, and memory devices containing the same Jan. 7, 2014
8624217 Planar phase-change memory cell with parallel electrical paths Jan. 7, 2014
8624215 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds Jan. 7, 2014
8624214 Semiconductor device having a resistance variable element and a manufacturing method thereof Jan. 7, 2014
8623697 Avoiding degradation of chalcogenide material during definition of multilayer stack structure Jan. 7, 2014
8614117 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor Dec. 24, 2013
8609459 Method of manufacturing a nanostructure quick-switch memristor Dec. 17, 2013
8610099 Planar resistive memory integration Dec. 17, 2013
8610101 Nonvolatile variable resistance element having a variable resistive layer disposed between first and second electrodes Dec. 17, 2013
8610280 Platinum-containing constructions, and methods of forming platinum-containing constructions Dec. 17, 2013
8598561 Nonvolatile memory device and method for manufacturing same Dec. 3, 2013
8598560 Resistive memory elements exhibiting increased interfacial adhesion strength, methods of forming the same, and related resistive memory cells and memory devices Dec. 3, 2013
8592250 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor Nov. 26, 2013
8592789 Nonvolatile semiconductor memory device and manufacturing method thereof Nov. 26, 2013
8592790 Phase-change random access memory device and method of manufacturing the same Nov. 26, 2013
8592791 Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof Nov. 26, 2013
8592792 Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride Nov. 26, 2013
8592798 Non-volatile storage device and method for manufacturing the same Nov. 26, 2013
8586958 Switching element and manufacturing method thereof Nov. 19, 2013
8586443 Method of fabricating phase change memory device capable of reducing disturbance Nov. 19, 2013

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