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Class Information
Number: 257/297
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) > With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection)
Description: Subject matter wherein the device further includes means (1) to prevent electrical charge in the capacitor or capacitive type insulated gate region of the transistor to leak therefrom, or (2) to prevent excess leakage currents across pn junctions due to generation of minority carriers in the device for example (a) alpha particles incident on the device or (b) thermal generation of electron-hole pairs, or (c) minority carriers injected into the semiconductor substrate by other devices in the same substrate.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8643110 Localized biasing for silicon on insulator structures Feb. 4, 2014
8604530 Electronic devices and systems, and methods for making and using the same Dec. 10, 2013
8598642 Very dense NVM bitcell Dec. 3, 2013
8592883 Semiconductor structure and method for making same Nov. 26, 2013
8536638 Method of manufacturing a semiconductor device having lower leakage current between semiconductor substrate and bit lines Sep. 17, 2013
8536625 Electronic shutter with photogenerated charge extinguishment capability for back-illuminated image sensors Sep. 17, 2013
8450783 Semiconductor device May. 28, 2013
8435873 Unguarded Schottky barrier diodes with dielectric underetch at silicide interface May. 7, 2013
8415749 Semiconductor structure with dielectric-sealed doped region Apr. 9, 2013
8357953 Bipolar transistor with low resistance base contact Jan. 22, 2013
8357963 Semiconductor device Jan. 22, 2013
8354660 Bottom electrodes for use with metal oxide resistivity switching layers Jan. 15, 2013
8330198 Device for preventing current-leakage Dec. 11, 2012
8278692 Soft error reduction circuit and method Oct. 2, 2012
8273648 Circuit structures and methods with BEOL layers configured to block electromagnetic edge interference Sep. 25, 2012
8263462 Dielectric punch-through stoppers for forming FinFETs having dual fin heights Sep. 11, 2012
8227846 Systems and methods for a continuous-well decoupling capacitor Jul. 24, 2012
8193568 Nanocrystal based universal memory cells, and memory cells Jun. 5, 2012
8164128 Magnetic devices and techniques for formation thereof Apr. 24, 2012
8159014 Localized biasing for silicon on insulator structures Apr. 17, 2012
8143664 Semiconductor device having lower leakage current between semiconductor substrate and bit lines Mar. 27, 2012
8138563 Circuit structures and methods with BEOL layers configured to block electromagnetic edge interference Mar. 20, 2012
8129771 Semiconductor memory device Mar. 6, 2012
8125010 Semiconductor device Feb. 28, 2012
8115243 Surround gate access transistors with grown ultra-thin bodies Feb. 14, 2012
8067289 Semiconductor device and manufacturing method thereof Nov. 29, 2011
8050066 MISFET with capacitors Nov. 1, 2011
8034684 Semiconductor device with improved overlay margin and method of manufacturing the same Oct. 11, 2011
8003471 Formation of a super steep retrograde channel Aug. 23, 2011
7986006 Single transistor memory cell with reduced recombination rates Jul. 26, 2011
7965540 Structure and method for improving storage latch susceptibility to single event upsets Jun. 21, 2011
7939872 Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films May. 10, 2011
7919800 Capacitor-less memory cells and cell arrays Apr. 5, 2011
7915684 Semiconductor device and manufacturing method thereof Mar. 29, 2011
7911005 Dram having deeper source drain region than that of an logic region Mar. 22, 2011
7902590 Semiconductor device, method of controlling the same, and method of manufacturing the same Mar. 8, 2011
7898013 Integrated circuits and methods with two types of decoupling capacitors Mar. 1, 2011
7881135 Method for Q.sub.CRIT measurement in bulk CMOS using a switched capacitor circuit Feb. 1, 2011
7851285 Non-volatile memory device and method for fabricating the same Dec. 14, 2010
7847365 MOSFET with isolation structure for monolithic integration and fabrication method thereof Dec. 7, 2010
7847849 Solid-state imaging device, driving method thereof, and camera Dec. 7, 2010
7821110 Circuit structures and methods with BEOL layer(s) configured to block electromagnetic interference Oct. 26, 2010
7791123 Soft error protection structure employing a deep trench Sep. 7, 2010
7791122 Semiconductor memory device Sep. 7, 2010
7791169 Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors Sep. 7, 2010
RE41625 Semiconductor device and method of fabricating the same Sep. 7, 2010
7781283 Split-gate DRAM with MuGFET, design structure, and method of manufacture Aug. 24, 2010
7759715 Memory cell comprising dynamic random access memory (DRAM) nanoparticles and nonvolatile memory (NVM) nanoparticle Jul. 20, 2010
7759669 Phase change memory element with phase-change electrodes Jul. 20, 2010
7732279 Semiconductor device with improved overlay margin and method of manufacturing the same Jun. 8, 2010

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