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Class Information
Number: 257/296
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell)
Description: Subject matter wherein the device gate acts as a capacitor (i.e., wherein a positive potential placed on the gate electrode creates a negative charge on the other side of the insulator in the semiconductor material of the device, and vice versa) or the device is a transistor and it is combined with a capacitor.


Sub-classes under this class:

Class Number Class Name Patents
257/300 Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., non-destructive readout dynamic memory cell structure) 695
257/298 Capacitor for signal storage in combination with non-volatile storage means 495
257/301 Capacitor in trench 1,021
257/313 Inversion layer capacitor 149
257/306 Stacked capacitor 1,717
257/311 Storage node isolated by dielectric from semiconductor substrate 375
257/299 Structure configured for voltage converter (e.g., charge pump, substrate bias generator) 147
257/312 Voltage variable capacitor (i. e., capacitance varies with applied voltage) 154
257/310 With high dielectric constant insulator (e.g., ta 2 o 5 ) 937
257/297 With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection) 247


Patents under this class:

Patent Number Title Of Patent Date Issued
7619311 Memory cell device with coplanar electrode surface and method Nov. 17, 2009
7619270 Electronic device including discontinuous storage elements Nov. 17, 2009
7619269 Semiconductor device, manufacturing process thereof and imaging device Nov. 17, 2009
7618874 Methods of forming capacitors Nov. 17, 2009
7618850 Method of making a diode read/write memory cell in a programmed state Nov. 17, 2009
7615815 Cell region layout of semiconductor device and method of forming contact pad using the same Nov. 10, 2009
7615814 Ferroelectric device having a contact for taking the potential of a metal film and a plurality of capacitors positioned periodically Nov. 10, 2009
7613027 Semiconductor memory device with dual storage node and fabricating and operating methods thereof Nov. 3, 2009
7612411 Dual-gate device and method Nov. 3, 2009
7612397 Memory cell having first and second capacitors with electrodes acting as control gates for nonvolatile memory transistors Nov. 3, 2009
7608898 One transistor DRAM cell structure Oct. 27, 2009
7608879 Semiconductor device including a capacitance Oct. 27, 2009
7608878 Semiconductor device manufactured with a double shallow trench isolation process Oct. 27, 2009
7608877 Circuit device having capacitor and field effect transistor, and display apparatus therewith Oct. 27, 2009
7608876 Merged MOS-bipolar capacitor memory cell Oct. 27, 2009
7605418 Methods of fabricating capacitor Oct. 20, 2009
7605034 Integrated circuit memory cells and methods of forming Oct. 20, 2009
7602001 Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM ce Oct. 13, 2009
7601995 Integrated circuit having resistive memory cells Oct. 13, 2009
7601630 Semiconductor device and method for fabricating the same Oct. 13, 2009
7598575 Semiconductor die with reduced RF attenuation Oct. 6, 2009
7598559 Semiconductor storage device, manufacturing method therefor, and portable electronic equipment Oct. 6, 2009
7598558 Method of manufacturing semiconductor integrated circuit device having capacitor element Oct. 6, 2009
7598557 Semiconductor device and method for fabricating a semicondutor device including first and second hydrogen diffusion preventing films Oct. 6, 2009
7598543 Semiconductor memory component with body region of memory cell having a depression and a graded dopant concentration Oct. 6, 2009
7595521 Terraced film stack Sep. 29, 2009
7595203 Ferroelectric memory device with a conductive polymer layer and a method of formation Sep. 29, 2009
7592661 CMOS embedded high voltage transistor Sep. 22, 2009
7592659 Field effect transistor and an operation method of the field effect transistor Sep. 22, 2009
7592658 Method of forming a semiconductor device having a capacitor and a resistor Sep. 22, 2009
7592657 Semiconductor device and method of manufacturing the same Sep. 22, 2009
7592656 Semiconductor device and fabricating method of the same Sep. 22, 2009
7592626 Capacitor and method of manufacturing same Sep. 22, 2009
7592220 Capacitance process using passivation film scheme Sep. 22, 2009
7589369 Semiconductor constructions Sep. 15, 2009
7589368 Three-dimensional memory devices Sep. 15, 2009
7589367 Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines Sep. 15, 2009
7586121 Electroluminescence device having stacked capacitors Sep. 8, 2009
7582925 Integrated circuit devices including insulating support layers Sep. 1, 2009
7582924 Semiconductor devices having polymetal gate electrodes Sep. 1, 2009
7582902 Raw material carbon composition for carbon material for electrode in electric double layer capacitor Sep. 1, 2009
7579643 Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same Aug. 25, 2009
7579234 Method for fabricating memory device with recess channel MOS transistor Aug. 25, 2009
7576390 System for vertical DMOS with slots Aug. 18, 2009
7576389 Semiconductor device and manufacture method thereof Aug. 18, 2009
7576379 Floating body dynamic random access memory with enhanced source side capacitance Aug. 18, 2009
7573085 Deep trench formation in semiconductor device fabrication Aug. 11, 2009
7571651 Capacitive pressure sensor and method for fabricating the same Aug. 11, 2009
7569912 Differential variable capacitors and their applications Aug. 4, 2009
7569877 System and method based on field-effect transistors for addressing nanometer-scale devices Aug. 4, 2009



 
 
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