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Browse by Category: Main > Physics
Class Information
Number: 257/295
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With ferroelectric material layer
Description: Subject matter including a layer of material which exhibits a spontaneous dipole moment.










Patents under this class:

Patent Number Title Of Patent Date Issued
8711600 High density molecular memory storage with read and write capabilities Apr. 29, 2014
8710602 Method and system for providing magnetic junctions having improved characteristics Apr. 29, 2014
8704204 Ferroelectric nanoshell devices Apr. 22, 2014
8686484 Spin-torque magnetoresistive memory element and method of fabricating same Apr. 1, 2014
8680592 Method of forming a magnetic tunnel junction device Mar. 25, 2014
8674419 Method of forming a CMOS structure having gate insulation films of different thicknesses Mar. 18, 2014
8669628 Magnetoresistive element and magnetic memory using the same Mar. 11, 2014
8669121 Method for forming polarization reversal Mar. 11, 2014
8664704 Electronic component with reactive barrier and hermetic passivation layer Mar. 4, 2014
8659062 Method of manufacturing a ferroelectric capacitor and a ferroelectric capacitor Feb. 25, 2014
8653571 Semiconductor device Feb. 18, 2014
8652855 Low resistance stacked annular contact Feb. 18, 2014
8648401 Domain wall assisted spin torque transfer magnetresistive random access memory structure Feb. 11, 2014
8644063 Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions Feb. 4, 2014
8642358 Method for fabricating magnetic tunnel junction device Feb. 4, 2014
8637946 Spin MOSFET and reconfigurable logic circuit Jan. 28, 2014
8633555 Magnetic sensor Jan. 21, 2014
8633036 Manufacturing method of ferroelectric capacitor Jan. 21, 2014
8629487 Semiconductor device and method of manufacturing same Jan. 14, 2014
8628981 Method of manufacturing a ferroelectric-capacitor memory device including recovery annealing Jan. 14, 2014
8619467 High GMR structure with low drive fields Dec. 31, 2013
8618590 Spin transistor, integrated circuit, and magnetic memory Dec. 31, 2013
8614104 Method for manufacturing semiconductor device Dec. 24, 2013
8609262 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application Dec. 17, 2013
8604521 Optically controlled read only memory Dec. 10, 2013
8598671 Storage element, method for manufacturing storage element, and memory Dec. 3, 2013
8592937 Pyroelectric detector, pyroelectric detection device, and electronic instrument Nov. 26, 2013
8592928 Magnetic random access memory and method of manufacturing the same Nov. 26, 2013
8592882 Magnetic random access memory and manufacturing method thereof Nov. 26, 2013
8587076 Semiconductor device Nov. 19, 2013
8587044 Complementary logic device using spin injection Nov. 19, 2013
8587043 Magnetoresistive random access memory and method of manufacturing the same Nov. 19, 2013
8587042 Magnetoresistive random access memory device Nov. 19, 2013
8582343 Semiconductor storage device, semiconductor storage device manufacturing method and package resin forming method Nov. 12, 2013
8580580 Magnetic element with varying areal extents Nov. 12, 2013
8575711 Storage element and memory Nov. 5, 2013
8575667 Magnetic memory devices with thin conductive bridges Nov. 5, 2013
8575624 Semiconductor device Nov. 5, 2013
8574927 Magnetic tunnel junction device and its fabricating method Nov. 5, 2013
8569849 Hole first hardmask definition Oct. 29, 2013
8564039 Semiconductor devices including gate structures comprising colossal magnetocapacitive materials Oct. 22, 2013
8558332 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element Oct. 15, 2013
8558295 Nonvolatile memory cell and method of manufacturing the same Oct. 15, 2013
8558294 Semiconductor device and fabrication process thereof Oct. 15, 2013
8552484 Semiconductor device and method for fabricating the same Oct. 8, 2013
8542519 Semiconductor memory device Sep. 24, 2013
8535952 Method for manufacturing non-volatile magnetic memory Sep. 17, 2013
8530948 Varactors including interconnect layers Sep. 10, 2013
8525602 Magnetic device with weakly exchange coupled antiferromagnetic layer Sep. 3, 2013
8524509 Method for forming polarization reversal Sep. 3, 2013











 
 
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