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Class Information
Number: 257/29
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Ballistic transport device (e.g., hot electron transistor)
Description: Subject matter in which an active layer is present through which carriers pass, which active layer is thinner than the mean free path of the carriers in the material in that layer, so that carriers can pass through the layer without scattering.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
5712491 Lateral theta device Jan. 27, 1998
5640022 Quantum effect device Jun. 17, 1997
5548140 High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt Aug. 20, 1996
5543749 Resonant tunneling transistor Aug. 6, 1996
5459334 Negative absolute conductance device and method Oct. 17, 1995
5448085 Limited current density field effect transistor with buried source and drain Sep. 5, 1995
5442194 Room-temperature tunneling hot-electron transistor Aug. 15, 1995
5442192 Heterostructure electron emitter utilizing a quantum well Aug. 15, 1995
5416339 Semiconductor device having electrode for collecting electric charge in channel region May. 16, 1995
5367274 Quantum wave guiding electronic switch Nov. 22, 1994
5352904 Multiple quantum well superlattice infrared detector with low dark current and high quantum efficiency Oct. 4, 1994
5350931 Double barrier resonant propagation filter Sep. 27, 1994
5349214 Complementary heterojunction device Sep. 20, 1994
5347142 Modes of infrared hot electron transistor operation in infrared detection Sep. 13, 1994
5321278 High electron mobility transistor Jun. 14, 1994
5311045 Field effect devices with ultra-short gates May. 10, 1994
5304816 Article comprising a "ballistic" heterojunction bipolar transistor Apr. 19, 1994
5280181 Quantum semiconductor device that uses a quantum point contact for producing a quantum mechanical carrier wave with directivity Jan. 18, 1994
5280182 Resonant tunneling transistor with barrier layers Jan. 18, 1994
5266814 Optically activated resonant-tunneling transistor Nov. 30, 1993
5264722 Nanochannel glass matrix used in making mesoscopic structures Nov. 23, 1993
5206524 Heterostructure bipolar transistor Apr. 27, 1993
5191216 Quantum mechanical semiconductor device with electron/hole diffractive grating Mar. 2, 1993
5132760 Electron wave deflection in modulation doped and other doped semiconductor structures Jul. 21, 1992
5049955 Semiconductor ballistic electron velocity control structure Sep. 17, 1991
5015874 Status holding circuit and logic circuit using the same May. 14, 1991
4994882 Semiconductor device and method Feb. 19, 1991
4992840 Carbon doping MOSFET substrate to suppress hit electron trapping Feb. 12, 1991
4987458 Semiconductor biased superlattice tunable interference filter/emitter Jan. 22, 1991
4985737 Solid state quantum mechanical electron and hole wave devices Jan. 15, 1991
4910562 Field induced base transistor Mar. 20, 1990
4901121 Semiconductor device comprising a perforated metal silicide layer Feb. 13, 1990
4879581 Transferred electron device with periodic ballistic regions Nov. 7, 1989
4862238 Transistors Aug. 29, 1989
4806994 Semiconductor device Feb. 21, 1989
4797722 Hot charge-carrier transistors Jan. 10, 1989
4633279 Semiconductor devices Dec. 30, 1986
4525731 Semiconductor conversion of optical-to-electrical energy Jun. 25, 1985
4504846 Multiwavelength optical-to-electrical logic operations Mar. 12, 1985
4366493 Semiconductor ballistic transport device Dec. 28, 1982
4326208 Semiconductor inversion layer transistor Apr. 20, 1982
4203124 Low noise multistage avalanche photodetector May. 13, 1980
4149174 Majority charge carrier bipolar diode with fully depleted barrier region at zero bias Apr. 10, 1979
4127861 Metal base transistor with thin film amorphous semiconductors Nov. 28, 1978

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