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Class Information
Number: 257/29
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Ballistic transport device (e.g., hot electron transistor)
Description: Subject matter in which an active layer is present through which carriers pass, which active layer is thinner than the mean free path of the carriers in the material in that layer, so that carriers can pass through the layer without scattering.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7576353 |
Ballistic deflection transistor and logic circuits based on same |
Aug. 18, 2009 |
| 7504654 |
Structure for logical "OR" using ballistics transistor technology |
Mar. 17, 2009 |
| 7432522 |
Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them |
Oct. 7, 2008 |
| 7414262 |
Electronic devices and methods for forming the same |
Aug. 19, 2008 |
| 7332737 |
Isolation trench geometry for image sensors |
Feb. 19, 2008 |
| 7315041 |
Switching devices based on half-metals |
Jan. 1, 2008 |
| 7173275 |
Thin-film transistors based on tunneling structures and applications |
Feb. 6, 2007 |
| 7151054 |
Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks |
Dec. 19, 2006 |
| 7122735 |
Quantum well energizing method and apparatus |
Oct. 17, 2006 |
| 6952055 |
Intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same |
Oct. 4, 2005 |
| 6870179 |
Increasing stress-enhanced drive current in a MOS transistor |
Mar. 22, 2005 |
| 6791338 |
Gated nanoscale switch having channel of molecular wires |
Sep. 14, 2004 |
| 6627914 |
Millimeter wave and far-infrared detector |
Sep. 30, 2003 |
| 6566679 |
Integrated semiconductor superlattice optical modulator |
May. 20, 2003 |
| 6566694 |
Heterojunction bipolar transferred electron tetrode |
May. 20, 2003 |
| 6521479 |
Repackaging semiconductor IC devices for failure analysis |
Feb. 18, 2003 |
| 6515339 |
Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
Feb. 4, 2003 |
| 6501092 |
Integrated semiconductor superlattice optical modulator |
Dec. 31, 2002 |
| 6420727 |
Light-emitting semiconductor device with quantum-wave interference layers |
Jul. 16, 2002 |
| 6410947 |
Semiconductor device and process of production of same |
Jun. 25, 2002 |
| 6303940 |
Charge injection transistor using high-k dielectric barrier layer |
Oct. 16, 2001 |
| 6214632 |
Electro-optical device with integral optical element |
Apr. 10, 2001 |
| 6185961 |
Nanopost arrays and process for making same |
Feb. 13, 2001 |
| 6153907 |
IC layout structure for MOSFET having narrow and short channel |
Nov. 28, 2000 |
| 6091077 |
MIS SOI semiconductor device with RTD and/or HET |
Jul. 18, 2000 |
| 5907159 |
Hot electron device and a resonant tunneling hot electron device |
May. 25, 1999 |
| 5895931 |
Semiconductor device |
Apr. 20, 1999 |
| 5894135 |
Superconductor device |
Apr. 13, 1999 |
| 5773842 |
Resonant-tunnelling hot electron transistor |
Jun. 30, 1998 |
| 5744817 |
Hot carrier transistors and their manufacture |
Apr. 28, 1998 |
| 5742071 |
Wiringless logical operation circuits |
Apr. 21, 1998 |
| 5712491 |
Lateral theta device |
Jan. 27, 1998 |
| 5640022 |
Quantum effect device |
Jun. 17, 1997 |
| 5548140 |
High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt |
Aug. 20, 1996 |
| 5543749 |
Resonant tunneling transistor |
Aug. 6, 1996 |
| 5459334 |
Negative absolute conductance device and method |
Oct. 17, 1995 |
| 5448085 |
Limited current density field effect transistor with buried source and drain |
Sep. 5, 1995 |
| 5442192 |
Heterostructure electron emitter utilizing a quantum well |
Aug. 15, 1995 |
| 5442194 |
Room-temperature tunneling hot-electron transistor |
Aug. 15, 1995 |
| 5416339 |
Semiconductor device having electrode for collecting electric charge in channel region |
May. 16, 1995 |
| 5367274 |
Quantum wave guiding electronic switch |
Nov. 22, 1994 |
| 5352904 |
Multiple quantum well superlattice infrared detector with low dark current and high quantum efficiency |
Oct. 4, 1994 |
| 5350931 |
Double barrier resonant propagation filter |
Sep. 27, 1994 |
| 5349214 |
Complementary heterojunction device |
Sep. 20, 1994 |
| 5347142 |
Modes of infrared hot electron transistor operation in infrared detection |
Sep. 13, 1994 |
| 5321278 |
High electron mobility transistor |
Jun. 14, 1994 |
| 5311045 |
Field effect devices with ultra-short gates |
May. 10, 1994 |
| 5304816 |
Article comprising a "ballistic" heterojunction bipolar transistor |
Apr. 19, 1994 |
| 5280182 |
Resonant tunneling transistor with barrier layers |
Jan. 18, 1994 |
| 5280181 |
Quantum semiconductor device that uses a quantum point contact for producing a quantum mechanical carrier wave with directivity |
Jan. 18, 1994 |
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