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Class Information
Number: 257/289
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Significant semiconductor chemical compound in bulk crystal (e.g., gaas)
Description: Subject matter wherein the insulated electrode field effect device contains a significant semiconductor chemical compound in a bulk (as contrasted with thin film) crystal (e.g., GaAs).










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8674407 Semiconductor device using a group III nitride-based semiconductor Mar. 18, 2014
8637909 Mixed mode dual switch Jan. 28, 2014
8575621 Low interconnect resistance integrated switches Nov. 5, 2013
8569811 Self clamping FET devices in circuits using transient sources Oct. 29, 2013
8530978 High current high voltage GaN field effect transistors and method of fabricating same Sep. 10, 2013
8519916 Low interconnect resistance integrated switches Aug. 27, 2013
8513720 Metal oxide semiconductor thin film transistors Aug. 20, 2013
8466460 Fused bithiophene-vinylene polymers Jun. 18, 2013
8420476 Integrated circuit with finFETs and MIM fin capacitor Apr. 16, 2013
8410482 Semiconductor device, light emitting apparatus and electronic device Apr. 2, 2013
8349694 Enhanced confinement of high-K metal gate electrode structures by reducing material erosion of a dielectric cap layer upon forming a strain-inducing semiconductor alloy Jan. 8, 2013
8330187 GaN-based field effect transistor Dec. 11, 2012
8274121 Compound field effect transistor with multi-feed gate and serpentine interconnect Sep. 25, 2012
8102000 P-channel germanium on insulator (GOI) one transistor memory cell Jan. 24, 2012
8049197 Self-aligned nano-cross-point phase change memory Nov. 1, 2011
8034669 Drive current adjustment for transistors formed in the same active region by locally providing embedded strain-inducing semiconductor material in the active region Oct. 11, 2011
7994550 Semiconductor structures having both elemental and compound semiconductor devices on a common substrate Aug. 9, 2011
7943974 Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy May. 17, 2011
7943920 Resistive memory structure with buffer layer May. 17, 2011
7888713 Semiconductor device and manufacturing method thereof Feb. 15, 2011
7875914 Switch mode power amplifier using mis-HEMT with field plate extension Jan. 25, 2011
7859030 Heterojunction bipolar transistor and fabrication method of the same Dec. 28, 2010
7851832 Semiconductor device Dec. 14, 2010
7843020 High withstand voltage transistor and manufacturing method thereof, and semiconductor device adopting high withstand voltage transistor Nov. 30, 2010
7834340 Phase change memory devices and methods of fabricating the same Nov. 16, 2010
7777215 Resistive memory structure with buffer layer Aug. 17, 2010
7755105 Capacitor-less memory Jul. 13, 2010
7750368 Memory device Jul. 6, 2010
7745848 Gallium nitride material devices and thermal designs thereof Jun. 29, 2010
7709867 Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy May. 4, 2010
7683406 Semiconductor device and method for forming the same Mar. 23, 2010
7667247 Method for passivating gate dielectric films Feb. 23, 2010
7638788 Phase change memory device and method of forming the same Dec. 29, 2009
7633130 High-performance field effect transistors with self-assembled nanodielectrics Dec. 15, 2009
7554139 Semiconductor manufacturing method and semiconductor device Jun. 30, 2009
7548112 Switch mode power amplifier using MIS-HEMT with field plate extension Jun. 16, 2009
7544967 Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications Jun. 9, 2009
7531889 Epitaxial substrate and semiconductor element May. 12, 2009
7508003 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon Mar. 24, 2009
7491988 Transistors with increased mobility in the channel zone and method of fabrication Feb. 17, 2009
7473929 Semiconductor device and method for fabricating the same Jan. 6, 2009
7432541 Metal oxide semiconductor field effect transistor Oct. 7, 2008
7432542 Semiconductor device with electrostrictive layer in semiconductor layer and method of manufacturing the same Oct. 7, 2008
7422953 Semiconductor device and method of manufacturing the same Sep. 9, 2008
7420261 Bulk nitride mono-crystal including substrate for epitaxy Sep. 2, 2008
7417271 Electrode structure having at least two oxide layers and non-volatile memory device having the same Aug. 26, 2008
7368510 Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units May. 6, 2008
7304336 FinFET structure and method to make the same Dec. 4, 2007
7256465 Ultra-shallow metal oxide surface channel MOS transistor Aug. 14, 2007
7242041 Field-effect transistors with weakly coupled layered inorganic semiconductors Jul. 10, 2007

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