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Class Information
Number: 257/289
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Significant semiconductor chemical compound in bulk crystal (e.g., gaas)
Description: Subject matter wherein the insulated electrode field effect device contains a significant semiconductor chemical compound in a bulk (as contrasted with thin film) crystal (e.g., GaAs).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7554139 |
Semiconductor manufacturing method and semiconductor device |
Jun. 30, 2009 |
| 7548112 |
Switch mode power amplifier using MIS-HEMT with field plate extension |
Jun. 16, 2009 |
| 7544967 |
Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
Jun. 9, 2009 |
| 7531889 |
Epitaxial substrate and semiconductor element |
May. 12, 2009 |
| 7508003 |
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon |
Mar. 24, 2009 |
| 7491988 |
Transistors with increased mobility in the channel zone and method of fabrication |
Feb. 17, 2009 |
| 7473929 |
Semiconductor device and method for fabricating the same |
Jan. 6, 2009 |
| 7432542 |
Semiconductor device with electrostrictive layer in semiconductor layer and method of manufacturing the same |
Oct. 7, 2008 |
| 7432541 |
Metal oxide semiconductor field effect transistor |
Oct. 7, 2008 |
| 7422953 |
Semiconductor device and method of manufacturing the same |
Sep. 9, 2008 |
| 7420261 |
Bulk nitride mono-crystal including substrate for epitaxy |
Sep. 2, 2008 |
| 7417271 |
Electrode structure having at least two oxide layers and non-volatile memory device having the same |
Aug. 26, 2008 |
| 7368510 |
Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units |
May. 6, 2008 |
| 7304336 |
FinFET structure and method to make the same |
Dec. 4, 2007 |
| 7256465 |
Ultra-shallow metal oxide surface channel MOS transistor |
Aug. 14, 2007 |
| 7242041 |
Field-effect transistors with weakly coupled layered inorganic semiconductors |
Jul. 10, 2007 |
| 7227239 |
Resettable fuse device and method of fabricating the same |
Jun. 5, 2007 |
| 7221007 |
Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet |
May. 22, 2007 |
| 7214632 |
Using selective deposition to form phase-change memory cells |
May. 8, 2007 |
| 7193255 |
Semiconductor device with floating conducting region placed between device elements |
Mar. 20, 2007 |
| 7183567 |
Using selective deposition to form phase-change memory cells |
Feb. 27, 2007 |
| 7180109 |
Field effect transistor and method of fabrication |
Feb. 20, 2007 |
| 7132714 |
Vertical carbon nanotube-field effect transistor and method of manufacturing the same |
Nov. 7, 2006 |
| 7132730 |
Bulk nitride mono-crystal including substrate for epitaxy |
Nov. 7, 2006 |
| 7084442 |
Double gate transistor arrangement for receiving electrical signals from living cells |
Aug. 1, 2006 |
| 7045879 |
Silicon carbide semiconductor device having enhanced carrier mobility |
May. 16, 2006 |
| 7030409 |
Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain |
Apr. 18, 2006 |
| 7002189 |
Compound semiconductor device |
Feb. 21, 2006 |
| 6995396 |
Semiconductor substrate, semiconductor device and method for fabricating the same |
Feb. 7, 2006 |
| 6989556 |
Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure |
Jan. 24, 2006 |
| 6969634 |
Semiconductor layers with roughness patterning |
Nov. 29, 2005 |
| 6953954 |
Plasma oscillation switching device |
Oct. 11, 2005 |
| 6933553 |
Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor |
Aug. 23, 2005 |
| 6900481 |
Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors |
May. 31, 2005 |
| 6891213 |
Base current reversal SRAM memory cell and method |
May. 10, 2005 |
| 6891195 |
Semiconductor device and method of fabricating the same |
May. 10, 2005 |
| 6855951 |
Fluorinated polythiophenes and devices thereof |
Feb. 15, 2005 |
| 6815741 |
III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal |
Nov. 9, 2004 |
| 6770922 |
Semiconductor device composed of a group III-V nitride semiconductor |
Aug. 3, 2004 |
| 6753554 |
Water flow regulating device |
Jun. 22, 2004 |
| 6734476 |
Semiconductor devices having group III-V compound layers |
May. 11, 2004 |
| 6690029 |
Substituted pentacenes and electronic devices made with substituted pentacenes |
Feb. 10, 2004 |
| 6642539 |
Epitaxial template and barrier for the integration of functional thin film metal oxide heterostructures on silicon |
Nov. 4, 2003 |
| 6630697 |
GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal |
Oct. 7, 2003 |
| 6630699 |
Transistor device having an isolation structure located under a source region, drain region and channel region and a method of manufacture thereof |
Oct. 7, 2003 |
| 6621099 |
Polythiophenes and devices thereof |
Sep. 16, 2003 |
| 6597016 |
Semiconductor device and method for fabricating the same |
Jul. 22, 2003 |
| 6580101 |
GaN-based compound semiconductor device |
Jun. 17, 2003 |
| 6576929 |
Silicon carbide semiconductor device and manufacturing method |
Jun. 10, 2003 |
| 6570184 |
Thin film transistor and method for manufacturing the same |
May. 27, 2003 |
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