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Class Information
Number: 257/288
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode)
Description: Subject matter including an electrode which is electrically insulated from the active semiconductor region of the device (e.g., a metal oxide semiconductor insulated electrode).










Sub-classes under this class:

Class Number Class Name Patents
257/412 Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal) 1,059
257/410 Gate insulator includes material (including air or vacuum) other than sio 2 935
257/408 Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, ldd device) 1,268
257/296 Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) 3,346
257/367 Insulated gate controlled breakdown of pn junction (e.g., field plate diode) 154
257/368 Insulated gate field effect transistor in integrated circuit 1,337
257/290 Light responsive or combined with light responsive device 721
257/327 Short channel insulated gate field effect transistor 694
257/289 Significant semiconductor chemical compound in bulk crystal (e.g., gaas) 217
257/347 Single crystal semiconductor layer on insulating substrate (soi) 3,389
257/314 Variable threshold (e.g., floating gate memory device) 1,979
257/295 With ferroelectric material layer 2,182
257/409 With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.) 752
257/355 With overvoltage protective means 1,753
257/402 With permanent threshold adjustment (e.g., depletion mode) 340
257/365 With plural, separately connected, gate electrodes in same device 678
257/364 With resistive gate electrode 104


Patents under this class:

Patent Number Title Of Patent Date Issued
8710557 MOS transistor having combined-source structure with low power consumption and method for fabricating the same Apr. 29, 2014
8710556 Semiconductor device comprising a Fin and method for manufacturing the same Apr. 29, 2014
8709897 High performance strained source-drain structure and method of fabricating the same Apr. 29, 2014
8709888 Hybrid CMOS nanowire mesh device and PDSOI device Apr. 29, 2014
8703596 Semiconductor device and method of manufacturing semiconductor device Apr. 22, 2014
8703569 MOS transistor, manufacturing method thereof, and semiconductor device Apr. 22, 2014
8703567 Method for manufacturing a semiconductor device Apr. 22, 2014
8701283 Integrated capacitor having reversed plates Apr. 22, 2014
8692332 Strained-silicon transistor and method of making the same Apr. 8, 2014
8691681 Semiconductor device having a metal gate and fabricating method thereof Apr. 8, 2014
8686515 Double-groove bidirectional vertical component Apr. 1, 2014
8686417 Oxide semiconductor device formed by using multi-tone mask Apr. 1, 2014
8686385 Phase-change random access memory device and method of manufacturing the same Apr. 1, 2014
8685850 System and method of plating conductive gate contacts on metal gates for self-aligned contact interconnections Apr. 1, 2014
8685808 Semiconductor device fabrication method Apr. 1, 2014
8680628 Raised source/drain field effect transistor Mar. 25, 2014
8680617 Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS Mar. 25, 2014
8680614 Split trench-gate MOSFET with integrated Schottky diode Mar. 25, 2014
8674459 Three-dimensional memory devices and methods of manufacturing and operating the same Mar. 18, 2014
8674416 Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active region Mar. 18, 2014
8674415 High frequency semiconductor switch Mar. 18, 2014
8674407 Semiconductor device using a group III nitride-based semiconductor Mar. 18, 2014
8673722 Strained channel field effect transistor and the method for fabricating the same Mar. 18, 2014
8669623 Structure related to a thick bottom dielectric (TBD) for trench-gate devices Mar. 11, 2014
8669600 Liquid crystal display device Mar. 11, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8669162 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8664706 Current in one-time-programmable memory cells Mar. 4, 2014
8664702 Shallow trench isolation for a memory Mar. 4, 2014
8664069 Semiconductor structure and process thereof Mar. 4, 2014
8664055 Fin field-effect transistor structure and manufacturing process thereof Mar. 4, 2014
8664054 Method for forming semiconductor structure Mar. 4, 2014
8659113 Embedded semiconductor die package and method of making the same using metal frame carrier Feb. 25, 2014
8659091 Embedded stressors for multigate transistor devices Feb. 25, 2014
8659090 Resistive memory and methods for forming the same Feb. 25, 2014
8659080 Semiconductor structure and manufacturing process thereof Feb. 25, 2014
8659059 Strained transistor structure Feb. 25, 2014
8659058 Methods of forming nickel sulphide film on a semiconductor device Feb. 25, 2014
8659020 Epitaxial silicon wafer and method for manufacturing same Feb. 25, 2014
8658505 Embedded stressors for multigate transistor devices Feb. 25, 2014
8653602 Transistor having replacement metal gate and process for fabricating the same Feb. 18, 2014
8653592 Isolation structure, non-volatile memory having the same, and method of fabricating the same Feb. 18, 2014
8653584 Dual vertical channel transistor and fabrication method thereof Feb. 18, 2014
8653565 Mixed mode multiple switch integration of multiple compound semiconductor FET devices Feb. 18, 2014
8648400 FinFET semiconductor device with germanium (GE) fins Feb. 11, 2014
8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles Feb. 4, 2014
8643072 Semiconductor structure and method for forming the same Feb. 4, 2014
8643071 Integrated snubber in a single poly MOSFET Feb. 4, 2014
8643070 Chip package and method for forming the same Feb. 4, 2014
8643069 Semiconductor device having metal gate and manufacturing method thereof Feb. 4, 2014











 
 
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