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Class Information
Number: 257/288
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode)
Description: Subject matter including an electrode which is electrically insulated from the active semiconductor region of the device (e.g., a metal oxide semiconductor insulated electrode).
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/412 |
Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal) |
811 |
| 257/410 |
Gate insulator includes material (including air or vacuum) other than sio 2 |
673 |
| 257/408 |
Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, ldd device) |
1,044 |
| 257/296 |
Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) |
2,602 |
| 257/367 |
Insulated gate controlled breakdown of pn junction (e.g., field plate diode) |
96 |
| 257/368 |
Insulated gate field effect transistor in integrated circuit |
823 |
| 257/290 |
Light responsive or combined with light responsive device |
426 |
| 257/327 |
Short channel insulated gate field effect transistor |
496 |
| 257/289 |
Significant semiconductor chemical compound in bulk crystal (e.g., gaas) |
183 |
| 257/347 |
Single crystal semiconductor layer on insulating substrate (soi) |
2,367 |
| 257/314 |
Variable threshold (e.g., floating gate memory device) |
1,280 |
| 257/295 |
With ferroelectric material layer |
1,701 |
| 257/409 |
With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.) |
546 |
| 257/355 |
With overvoltage protective means |
1,291 |
| 257/402 |
With permanent threshold adjustment (e.g., depletion mode) |
259 |
| 257/365 |
With plural, separately connected, gate electrodes in same device |
436 |
| 257/364 |
With resistive gate electrode |
87 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615818 |
Semiconductor device and method of manufacturing the same |
Nov. 10, 2009 |
| 7615779 |
Forming electrodes to small electronic devices having self-assembled organic layers |
Nov. 10, 2009 |
| 7615812 |
Field effect semiconductor diodes and processing techniques |
Nov. 10, 2009 |
| 7615813 |
Semiconductor device using fuse/anti-fuse system |
Nov. 10, 2009 |
| 7611973 |
Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same |
Nov. 3, 2009 |
| 7612412 |
Semiconductor device and boost circuit |
Nov. 3, 2009 |
| 7612431 |
Trench polysilicon diode |
Nov. 3, 2009 |
| 7608867 |
Vertical IMOS transistor having a PIN diode formed within |
Oct. 27, 2009 |
| 7608912 |
Technique for creating different mechanical strain in different CPU regions by forming an etch stop layer having differently modified intrinsic stress |
Oct. 27, 2009 |
| 7608865 |
Club extension to a T-gate high electron mobility transistor |
Oct. 27, 2009 |
| 7608868 |
Semiconductor device and method for manufacturing the same |
Oct. 27, 2009 |
| 7608869 |
Thin film transistor and method of fabricating the same |
Oct. 27, 2009 |
| 7605414 |
MOS transistors having low-resistance salicide gates and a self-aligned contact between them |
Oct. 20, 2009 |
| 7605447 |
Highly manufacturable SRAM cells in substrates with hybrid crystal orientation |
Oct. 20, 2009 |
| 7601998 |
Semiconductor memory device having metallization comprising select lines, bit lines and word lines |
Oct. 13, 2009 |
| 7602638 |
Semiconductor memory device |
Oct. 13, 2009 |
| 7598544 |
Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same |
Oct. 6, 2009 |
| 7598551 |
High voltage device |
Oct. 6, 2009 |
| 7598550 |
MOS transistor and manufacturing method thereof |
Oct. 6, 2009 |
| 7598549 |
Semiconductor device having a silicon layer in a gate electrode |
Oct. 6, 2009 |
| 7595244 |
Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics |
Sep. 29, 2009 |
| 7595522 |
Nonvolatile semiconductor memory |
Sep. 29, 2009 |
| 7595559 |
Integrated circuit chip having pass-through vias therein that extend between multiple integrated circuits on the chip |
Sep. 29, 2009 |
| 7586169 |
Image sensor and method for manufacturing the same |
Sep. 8, 2009 |
| 7586160 |
Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit |
Sep. 8, 2009 |
| 7586151 |
Insulated gate semiconductor device |
Sep. 8, 2009 |
| 7586130 |
Vertical field effect transistor using linear structure as a channel region and method for fabricating the same |
Sep. 8, 2009 |
| 7586116 |
Semiconductor device having a semiconductor-on-insulator configuration and a superlattice |
Sep. 8, 2009 |
| 7585735 |
Asymmetric spacers and asymmetric source/drain extension layers |
Sep. 8, 2009 |
| 7582931 |
Recessed gate electrodes having covered layer interfaces and methods of forming the same |
Sep. 1, 2009 |
| 7582893 |
Semiconductor memory device comprising one or more injecting bilayer electrodes |
Sep. 1, 2009 |
| 7582526 |
Method for manufacturing semiconductor device |
Sep. 1, 2009 |
| 7579636 |
MIS-type field-effect transistor |
Aug. 25, 2009 |
| 7579660 |
Semiconductor device and manufacturing method thereof |
Aug. 25, 2009 |
| 7576399 |
Semiconductor device and method of manufacture thereof |
Aug. 18, 2009 |
| 7573062 |
Thin-film transistor, thin-film transistor sheet and their manufacturing method |
Aug. 11, 2009 |
| 7569869 |
Transistor having tensile strained channel and system including same |
Aug. 4, 2009 |
| 7569876 |
DRAM arrays, vertical transistor structures, and methods of forming transistor structures and DRAM arrays |
Aug. 4, 2009 |
| 7566655 |
Integration process for fabricating stressed transistor structure |
Jul. 28, 2009 |
| 7566924 |
Semiconductor device with gate spacer of positive slope and fabrication method thereof |
Jul. 28, 2009 |
| 7564080 |
Method for producing a laser diode component, housing for a laser diode component, and laser diode component itself |
Jul. 21, 2009 |
| 7564081 |
finFET structure with multiply stressed gate electrode |
Jul. 21, 2009 |
| 7564082 |
Gettering using voids formed by surface transformation |
Jul. 21, 2009 |
| 7564120 |
Electrical passivation of silicon-containing surfaces using organic layers |
Jul. 21, 2009 |
| 7564061 |
Field effect transistor and production method thereof |
Jul. 21, 2009 |
| 7560757 |
Semiconductor device with a structure suitable for miniaturization |
Jul. 14, 2009 |
| 7560774 |
IC chip |
Jul. 14, 2009 |
| 7560762 |
Asymmetric floating gate NAND flash memory |
Jul. 14, 2009 |
| 7560759 |
Semiconductor device and method of manufacturing the same |
Jul. 14, 2009 |
| 7560758 |
MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same |
Jul. 14, 2009 |
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