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Class Information
Number: 257/285
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor) > With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface)
Description: Subject matter wherein the JFET has a variable impurity atom dopant concentration in the channel or gate region, e.g., wherein the maximum dopant concentration is located below the surface of the device, in either the channel or gate region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615771 |
Memory array having memory cells formed from metallic material |
Nov. 10, 2009 |
| 7605412 |
Distributed high voltage JFET |
Oct. 20, 2009 |
| 7592653 |
Stress relaxation for top of transistor gate |
Sep. 22, 2009 |
| 7586137 |
Non-volatile memory device and method of fabricating the same |
Sep. 8, 2009 |
| 7579636 |
MIS-type field-effect transistor |
Aug. 25, 2009 |
| 7575975 |
Method for forming a planar and vertical semiconductor structure having a strained semiconductor layer |
Aug. 18, 2009 |
| 7535041 |
Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance |
May. 19, 2009 |
| 7531854 |
Semiconductor device having strain-inducing substrate and fabrication methods thereof |
May. 12, 2009 |
| 7525138 |
JFET device with improved off-state leakage current and method of fabrication |
Apr. 28, 2009 |
| 7495264 |
Semiconductor device with high dielectric constant insulating film and manufacturing method for the same |
Feb. 24, 2009 |
| 7453107 |
Method for applying a stress layer to a semiconductor device and device formed therefrom |
Nov. 18, 2008 |
| 7420232 |
Lateral junction field effect transistor and method of manufacturing the same |
Sep. 2, 2008 |
| 7417270 |
Distributed high voltage JFET |
Aug. 26, 2008 |
| 7391084 |
LDMOS transistor device, integrated circuit, and fabrication method thereof |
Jun. 24, 2008 |
| 7385249 |
Transistor structure and integrated circuit |
Jun. 10, 2008 |
| 7348589 |
Low power consumption magnetic memory and magnetic information recording device |
Mar. 25, 2008 |
| 7297618 |
Fully silicided gate electrodes and method of making the same |
Nov. 20, 2007 |
| 7297994 |
Semiconductor device having a retrograde dopant profile in a channel region |
Nov. 20, 2007 |
| 7274056 |
Semiconductor constructions |
Sep. 25, 2007 |
| 7211845 |
Multiple doped channel in a multiple doped gate junction field effect transistor |
May. 1, 2007 |
| 7187021 |
Static induction transistor |
Mar. 6, 2007 |
| 7157756 |
Field effect transistor |
Jan. 2, 2007 |
| 7141840 |
Semiconductor device and production method therefor |
Nov. 28, 2006 |
| 7129533 |
High concentration indium fluorine retrograde wells |
Oct. 31, 2006 |
| 7091535 |
High voltage device embedded non-volatile memory cell and fabrication method |
Aug. 15, 2006 |
| 7067363 |
Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances |
Jun. 27, 2006 |
| 7049644 |
Lateral junction field effect transistor and method of manufacturing the same |
May. 23, 2006 |
| 7038272 |
Method for forming a channel zone of a transistor and NMOS transistor |
May. 2, 2006 |
| 7023033 |
Lateral junction field-effect transistor |
Apr. 4, 2006 |
| 6960798 |
High-voltage semiconductor component |
Nov. 1, 2005 |
| 6946378 |
Methods for fabricating protective structures for bond wires |
Sep. 20, 2005 |
| 6924516 |
Semiconductor device |
Aug. 2, 2005 |
| 6894329 |
High-voltage semiconductor component |
May. 17, 2005 |
| 6870189 |
Pinch-off type vertical junction field effect transistor and method of manufacturing the same |
Mar. 22, 2005 |
| 6849466 |
Method for manufacturing MTJ cell of magnetic random access memory |
Feb. 1, 2005 |
| 6828609 |
High-voltage semiconductor component |
Dec. 7, 2004 |
| 6828628 |
Diffused MOS devices with strained silicon portions and methods for forming same |
Dec. 7, 2004 |
| 6825514 |
High-voltage semiconductor component |
Nov. 30, 2004 |
| 6815765 |
Semiconductor device with function of modulating gain coefficient and semiconductor integrated circuit including the same |
Nov. 9, 2004 |
| 6803611 |
Use of indium to define work function of p-type doped polysilicon |
Oct. 12, 2004 |
| 6800887 |
Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
Oct. 5, 2004 |
| 6800529 |
Method for fabricating semiconductor transistor device |
Oct. 5, 2004 |
| 6777728 |
Semiconductor device and complementary semiconductor device |
Aug. 17, 2004 |
| 6768160 |
Non-volatile memory cell and method of programming for improved data retention |
Jul. 27, 2004 |
| 6768147 |
Semiconductor device and method of fabricating the same |
Jul. 27, 2004 |
| 6670664 |
Single transistor random access memory (1T-RAM) cell with dual threshold voltages |
Dec. 30, 2003 |
| 6664579 |
Magnetic random access memory using bipolar junction transistor |
Dec. 16, 2003 |
| 6642558 |
Method and apparatus of terminating a high voltage solid state device |
Nov. 4, 2003 |
| 6630698 |
High-voltage semiconductor component |
Oct. 7, 2003 |
| 6548842 |
Field-effect transistor for alleviating short-channel effects |
Apr. 15, 2003 |
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