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Class Information
Number: 257/285
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor) > With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface)
Description: Subject matter wherein the JFET has a variable impurity atom dopant concentration in the channel or gate region, e.g., wherein the maximum dopant concentration is located below the surface of the device, in either the channel or gate region.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8710549 MOS device for eliminating floating body effects and self-heating effects Apr. 29, 2014
8643068 Integrated circuit having field effect transistors and manufacturing method Feb. 4, 2014
8618583 Junction gate field effect transistor structure having n-channel Dec. 31, 2013
8614467 Method of gate work function adjustment and metal gate transistor Dec. 24, 2013
8536627 Carbon implant for workfunction adjustment in replacement gate transistor Sep. 17, 2013
8530943 Semiconductor device Sep. 10, 2013
8513676 Semiconductor device and method for manufacturing same Aug. 20, 2013
8502281 Integrated circuit having vertical compensation component Aug. 6, 2013
8436398 Back diffusion suppression structures May. 7, 2013
8431972 Semiconductor ESD device and method of making same Apr. 30, 2013
8390077 Integration of low and high voltage CMOS devices Mar. 5, 2013
8338219 Multiplexed output two terminal photodiode array for imaging applications and related fabrication process Dec. 25, 2012
8330232 Nonvolatile memory device and method of forming the same Dec. 11, 2012
8264016 Semiconductor device including a channel stop zone Sep. 11, 2012
8264019 Multiplexed output two terminal photodiode array for imaging applications and related fabrication process Sep. 11, 2012
8159008 Method of fabricating a trench-generated transistor structure Apr. 17, 2012
8134142 Tunneling transistor with barrier Mar. 13, 2012
8105925 Method for forming an insulated gate field effect device Jan. 31, 2012
8071481 Method for forming highly strained source/drain trenches Dec. 6, 2011
8063419 Integrated circuit having compensation component Nov. 22, 2011
7968919 Integrated circuit including a charge compensation component Jun. 28, 2011
7968921 Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Jun. 28, 2011
7948016 Off-center deposition of organic semiconductor in an organic semiconductor device May. 24, 2011
7943969 Transistor with a plurality of layers with different Ge concentrations May. 17, 2011
7928486 Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system Apr. 19, 2011
7880202 Modulated-Vt transistor Feb. 1, 2011
7825441 Junction field effect transistor with a hyperabrupt junction Nov. 2, 2010
7791108 Nanowire tunneling transistor Sep. 7, 2010
7781809 High voltage depletion layer field effect transistor Aug. 24, 2010
7709311 JFET device with improved off-state leakage current and method of fabrication May. 4, 2010
7671358 Plasma implantated impurities in junction region recesses Mar. 2, 2010
7615771 Memory array having memory cells formed from metallic material Nov. 10, 2009
7605412 Distributed high voltage JFET Oct. 20, 2009
7592653 Stress relaxation for top of transistor gate Sep. 22, 2009
7586137 Non-volatile memory device and method of fabricating the same Sep. 8, 2009
7579636 MIS-type field-effect transistor Aug. 25, 2009
7575975 Method for forming a planar and vertical semiconductor structure having a strained semiconductor layer Aug. 18, 2009
7535041 Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance May. 19, 2009
7531854 Semiconductor device having strain-inducing substrate and fabrication methods thereof May. 12, 2009
7525138 JFET device with improved off-state leakage current and method of fabrication Apr. 28, 2009
7495264 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same Feb. 24, 2009
7453107 Method for applying a stress layer to a semiconductor device and device formed therefrom Nov. 18, 2008
7420232 Lateral junction field effect transistor and method of manufacturing the same Sep. 2, 2008
7417270 Distributed high voltage JFET Aug. 26, 2008
7391084 LDMOS transistor device, integrated circuit, and fabrication method thereof Jun. 24, 2008
7385249 Transistor structure and integrated circuit Jun. 10, 2008
7348589 Low power consumption magnetic memory and magnetic information recording device Mar. 25, 2008
7297618 Fully silicided gate electrodes and method of making the same Nov. 20, 2007
7297994 Semiconductor device having a retrograde dopant profile in a channel region Nov. 20, 2007
7274056 Semiconductor constructions Sep. 25, 2007

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