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Class Information
Number: 257/283
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor) > With schottky gate > Gate closely aligned to source region > With groove or overhang for alignment
Description: Subject matter wherein the device has a groove or overhang for alignment of the gate and source regions.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8680589 Omega shaped nanowire field effect transistors Mar. 25, 2014
8610238 Crack stop trenches Dec. 17, 2013
8546852 Semiconductor device Oct. 1, 2013
8476125 Fabrication technique for high frequency, high power group III nitride electronic devices Jul. 2, 2013
8319310 Field effect transistor gate process and structure Nov. 27, 2012
8188520 Field effect transistor and method for fabricating the same May. 29, 2012
8159008 Method of fabricating a trench-generated transistor structure Apr. 17, 2012
8125027 Semiconductor device having trenches extending through channel regions Feb. 28, 2012
8101509 Semiconductor integrated circuit device Jan. 24, 2012
8044433 GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage Oct. 25, 2011
8043927 Method of manufacturing a CMOS image sensor Oct. 25, 2011
8003412 Method and apparatus for measurement and control of photomask to substrate alignment Aug. 23, 2011
7973344 Double gate JFET with reduced area consumption and fabrication method therefor Jul. 5, 2011
7943991 Semiconductor device May. 17, 2011
7928494 Semiconductor device Apr. 19, 2011
7928480 Semiconductor device Apr. 19, 2011
7898025 Semiconductor device having recess gate Mar. 1, 2011
7834380 Field effect transistor and method for fabricating the same Nov. 16, 2010
7785980 Method of manufacturing semiconductor device using alignment mark and mark hole Aug. 31, 2010
7772710 Zero-order overlay targets Aug. 10, 2010
7728385 Trench MOSFET with an ONO insulating layer sandwiched between an ESD protection module atop and a semiconductor substrate Jun. 1, 2010
7723768 Asymmetric recessed gate MOSFET and method for manufacturing the same May. 25, 2010
7510953 Integrated fet and schottky device Mar. 31, 2009
7453107 Method for applying a stress layer to a semiconductor device and device formed therefrom Nov. 18, 2008
7419882 Alignment mark and alignment method for the fabrication of trench-capacitor dram devices Sep. 2, 2008
7411226 High electron mobility transistor (HEMT) structure with refractory gate metal Aug. 12, 2008
7391087 MOS transistor structure and method of fabrication Jun. 24, 2008
7342261 Light emitting device Mar. 11, 2008
7304335 Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance a Dec. 4, 2007
7030506 Mask and method for using the mask in lithographic processing Apr. 18, 2006
7023099 Wafer cleaning method and resulting wafer Apr. 4, 2006
7005755 Semiconductor device and fabrication process thereof Feb. 28, 2006
6979874 Semiconductor device and method of manufacturing thereof Dec. 27, 2005
6933523 Semiconductor alignment aid Aug. 23, 2005
6924516 Semiconductor device Aug. 2, 2005
6906419 Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same Jun. 14, 2005
6844579 Organic device including semiconducting layer aligned according to microgrooves of photoresist layer Jan. 18, 2005
6787826 Heterostructure field effect transistor Sep. 7, 2004
6780694 MOS transistor Aug. 24, 2004
6777722 Method and structure for double dose gate in a JFET Aug. 17, 2004
6773935 Confocal 3D inspection system and process Aug. 10, 2004
6768143 Structure and method of making three finger folded field effect transistors having shared junctions Jul. 27, 2004
6753559 Transistor having improved gate structure Jun. 22, 2004
6653667 GaAs-based semiconductor field-effect transistor Nov. 25, 2003
6613623 High fMAX deep submicron MOSFET Sep. 2, 2003
6570238 Preweakened on chip metal fuse using dielectric trenches for barrier layer isolation May. 27, 2003
6504190 FET whose source electrode overhangs gate electrode and its manufacture method Jan. 7, 2003
6501146 Semiconductor device and method of manufacturing thereof Dec. 31, 2002
6483135 Field effect transistor Nov. 19, 2002
6448147 Semiconductor device and method for manufacturing the same Sep. 10, 2002

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