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Class Information
Number: 257/282
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor) > With schottky gate > Gate closely aligned to source region
Description: Subject matter wherein the gate region is closely aligned with the source region.

Sub-classes under this class:

Class Number Class Name Patents
257/283 With groove or overhang for alignment 120

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8680589 Omega shaped nanowire field effect transistors Mar. 25, 2014
8614465 Electronic device and manufacturing method Dec. 24, 2013
8536656 Self-aligned contacts for high k/metal gate process flow Sep. 17, 2013
8530942 Semiconductor device and method of fabricating the same Sep. 10, 2013
8492254 Method of manufacturing semiconductor devices Jul. 23, 2013
8487319 Diamond semiconductor element and process for producing the same Jul. 16, 2013
8450165 Semiconductor device having tipless epitaxial source/drain regions May. 28, 2013
8445891 Nitride based semiconductor device and method for manufacturing the same May. 21, 2013
8125027 Semiconductor device having trenches extending through channel regions Feb. 28, 2012
8044433 GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage Oct. 25, 2011
8026133 Method of fabricating a semiconductor device with a non-uniform gate insulating film Sep. 27, 2011
7973344 Double gate JFET with reduced area consumption and fabrication method therefor Jul. 5, 2011
7973339 Diamond semiconductor element and process for producing the same Jul. 5, 2011
7943991 Semiconductor device May. 17, 2011
7928480 Semiconductor device Apr. 19, 2011
7910949 Power semiconductor device Mar. 22, 2011
7498617 III-nitride integrated schottky and power device Mar. 3, 2009
7453107 Method for applying a stress layer to a semiconductor device and device formed therefrom Nov. 18, 2008
7411226 High electron mobility transistor (HEMT) structure with refractory gate metal Aug. 12, 2008
7332754 Semiconductor switch Feb. 19, 2008
7250643 Semiconductor device and method of manufacturing the same Jul. 31, 2007
7183573 Disposable spacer for symmetric and asymmetric Schottky contact to SOI mosfet Feb. 27, 2007
7109588 Method and apparatus for attaching microelectronic substrates and support members Sep. 19, 2006
6924516 Semiconductor device Aug. 2, 2005
6833571 Transistor device including buried source Dec. 21, 2004
6815768 Semiconductor integrated circuit device incorporating memory cell transistor and logic transistor, and method of manufacturing the same Nov. 9, 2004
6815765 Semiconductor device with function of modulating gain coefficient and semiconductor integrated circuit including the same Nov. 9, 2004
6780694 MOS transistor Aug. 24, 2004
6653667 GaAs-based semiconductor field-effect transistor Nov. 25, 2003
6613623 High fMAX deep submicron MOSFET Sep. 2, 2003
6580107 Compound semiconductor device with depletion layer stop region Jun. 17, 2003
6551882 Semiconductor device manufacturing method permitting suppression of leak current through the PN junction Apr. 22, 2003
6506640 Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-through Jan. 14, 2003
6504190 FET whose source electrode overhangs gate electrode and its manufacture method Jan. 7, 2003
6492669 Semiconductor device with schottky electrode having high schottky barrier Dec. 10, 2002
6410951 Structure for improving static refresh Jun. 25, 2002
6339237 Semiconductor device having a memory cell region and peripheral circuit region and method of manufacturing the same Jan. 15, 2002
6323521 Thin film transistor with electrodes having compressive and tensile stress Nov. 27, 2001
6278171 Sublithographic fuses using a phase shift mask Aug. 21, 2001
6225653 Semiconductor components and methods of manufacturing semiconductor components May. 1, 2001
6218688 Schottky diode with reduced size Apr. 17, 2001
6169318 CMOS imager with improved sensitivity Jan. 2, 2001
6150680 Field effect semiconductor device having dipole barrier Nov. 21, 2000
6078070 Broadband backside illuminated MESFET with collecting microlens Jun. 20, 2000
6075262 Semiconductor device having T-shaped gate electrode Jun. 13, 2000
6069375 Field effect transistor May. 30, 2000
6013926 Semiconductor device with refractory metal element Jan. 11, 2000
5945694 Compound semiconductor device having reduced temperature variability Aug. 31, 1999
5861644 High-frequency traveling wave field-effect transistor Jan. 19, 1999
5742082 Stable FET with shielding region in the substrate Apr. 21, 1998

1 2 3

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