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Class Information
Number: 257/28
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers)
Description: Subject matter wherein there are a plurality of active layers and barrier regions, the active layers being sufficiently close to each other that carrier quantum wave functions are spread out over plural active layers and the intervening barriers, and wherein the active layers and barrier regions do not form heterojunctions between different semiconductor materials.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7598517 |
Superjunction trench device and method |
Oct. 6, 2009 |
| 7586116 |
Semiconductor device having a semiconductor-on-insulator configuration and a superlattice |
Sep. 8, 2009 |
| 7514328 |
Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween |
Apr. 7, 2009 |
| 7459720 |
Single crystal wafer and solar battery cell |
Dec. 2, 2008 |
| 7435988 |
Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel |
Oct. 14, 2008 |
| 7417227 |
Scanning interference electron microscope |
Aug. 26, 2008 |
| 7375368 |
Superlattice for fabricating nanowires |
May. 20, 2008 |
| 7365357 |
Strain inducing multi-layer cap |
Apr. 29, 2008 |
| 7279701 |
Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions |
Oct. 9, 2007 |
| 7198832 |
Method for edge sealing barrier films |
Apr. 3, 2007 |
| 7141807 |
Nanowire capillaries for mass spectrometry |
Nov. 28, 2006 |
| 7102145 |
System and method for improving spatial resolution of electron holography |
Sep. 5, 2006 |
| 7061014 |
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
Jun. 13, 2006 |
| 7038234 |
Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs |
May. 2, 2006 |
| 7023010 |
Si/C superlattice useful for semiconductor devices |
Apr. 4, 2006 |
| 7009224 |
Metamorphic long wavelength high-speed photodiode |
Mar. 7, 2006 |
| 6998306 |
Semiconductor memory device having a multiple tunnel junction pattern and method of fabricating the same |
Feb. 14, 2006 |
| 6914008 |
Structure having pores and its manufacturing method |
Jul. 5, 2005 |
| 6914256 |
Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein |
Jul. 5, 2005 |
| 6900479 |
Stochastic assembly of sublithographic nanoscale interfaces |
May. 31, 2005 |
| 6900466 |
Semiconductor component for generating polychromatic electromagnetic radiation |
May. 31, 2005 |
| 6897472 |
Semiconductor device including MOSFET having band-engineered superlattice |
May. 24, 2005 |
| 6866901 |
Method for edge sealing barrier films |
Mar. 15, 2005 |
| 6849868 |
Methods and apparatus for resistance variable material cells |
Feb. 1, 2005 |
| 6777808 |
Capacitor for signal propagation across ground plane boundaries in superconductor integrated circuits |
Aug. 17, 2004 |
| 6734455 |
Agglomeration elimination for metal sputter deposition of chalcogenides |
May. 11, 2004 |
| 6713788 |
Opto-electric mounting apparatus |
Mar. 30, 2004 |
| 6645839 |
Method for improving a doping profile for gas phase doping |
Nov. 11, 2003 |
| 6489645 |
Integrated circuit device including a layered superlattice material with an interface buffer layer |
Dec. 3, 2002 |
| 6399968 |
Semiconductor photoreceiving device |
Jun. 4, 2002 |
| 6359288 |
Nanowire arrays |
Mar. 19, 2002 |
| 6320212 |
Superlattice fabrication for InAs/GaSb/AISb semiconductor structures |
Nov. 20, 2001 |
| 6310373 |
Metal insulator semiconductor structure with polarization-compatible buffer layer |
Oct. 30, 2001 |
| 6294818 |
Parallel-stripe type semiconductor device |
Sep. 25, 2001 |
| 6291832 |
Resonant tunneling diode latch |
Sep. 18, 2001 |
| 6211531 |
Controllable conduction device |
Apr. 3, 2001 |
| 6191465 |
Solid state radiation detector |
Feb. 20, 2001 |
| 6080997 |
Electromagnetic-wave detector |
Jun. 27, 2000 |
| 6060723 |
Controllable conduction device |
May. 9, 2000 |
| 5831279 |
Device and method providing weak links in a superconducting film and device comprising weak links |
Nov. 3, 1998 |
| 5825049 |
Resonant tunneling device with two-dimensional quantum well emitter and base layers |
Oct. 20, 1998 |
| 5796119 |
Silicon resonant tunneling |
Aug. 18, 1998 |
| 5783292 |
Electroluminescent device with organic-inorganic composite thin film |
Jul. 21, 1998 |
| 5670796 |
Semiconductor device consisting of a semiconductor material having a deep impurity level |
Sep. 23, 1997 |
| 5612233 |
Method for manufacturing a single electron component |
Mar. 18, 1997 |
| 5606177 |
Silicon oxide resonant tunneling diode structure |
Feb. 25, 1997 |
| 5559343 |
Semiconductor device with metallic precipitate and its manufacture |
Sep. 24, 1996 |
| 5408107 |
Semiconductor device apparatus having multiple current-voltage curves and zero-bias memory |
Apr. 18, 1995 |
| 5391431 |
Magneto-optical recording medium |
Feb. 21, 1995 |
| 5350930 |
Cluster compound microelectronic component |
Sep. 27, 1994 |
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