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Class Information
Number: 257/28
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers)
Description: Subject matter wherein there are a plurality of active layers and barrier regions, the active layers being sufficiently close to each other that carrier quantum wave functions are spread out over plural active layers and the intervening barriers, and wherein the active layers and barrier regions do not form heterojunctions between different semiconductor materials.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8704205 Semiconductor structure with improved capacitance of bit line Apr. 22, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8629425 Tunable wavelength light emitting diode Jan. 14, 2014
8598611 Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods Dec. 3, 2013
8597964 Manufacturing method of LED package structure Dec. 3, 2013
8592295 Gate-all around semiconductor nanowire FETs on bulk semiconductor wafers Nov. 26, 2013
8558643 Micromechanical device including N-type doping for providing temperature compensation and method of designing thereof Oct. 15, 2013
8541295 Pad-less gate-all around semiconductor nanowire FETs on bulk semiconductor wafers Sep. 24, 2013
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8361853 Graphene nanoribbons, method of fabrication and their use in electronic devices Jan. 29, 2013
8330144 Semi-polar nitride-based light emitting structure and method of forming same Dec. 11, 2012
8324631 Silicon carbide semiconductor device and method for manufacturing the same Dec. 4, 2012
8247249 Semi-polar nitride-based light emitting structure and method of forming same Aug. 21, 2012
8207538 Thin film transistor Jun. 26, 2012
8120139 Void isolated III-nitride device Feb. 21, 2012
8044379 Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same Oct. 25, 2011
8039869 Gallium nitride device substrate containing a lattice parameter altering element Oct. 18, 2011
7977665 Nitride-based light emitting device Jul. 12, 2011
7892872 Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates Feb. 22, 2011
7868337 Light emitting diode and method for manufacturing the same Jan. 11, 2011
7834344 Nanometric structure and corresponding manufacturing method Nov. 16, 2010
7834345 Tunnel field-effect transistors with superlattice channels Nov. 16, 2010
7812339 Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures Oct. 12, 2010
7727601 Method for edge sealing barrier films Jun. 1, 2010
7718996 Semiconductor device comprising a lattice matching layer May. 18, 2010
7692183 Polarity inversion of type-II InAs/GaSb superlattice photodiodes Apr. 6, 2010
7659539 Semiconductor device including a floating gate memory cell with a superlattice channel Feb. 9, 2010
7638791 InAs/GaSb infrared superlattice photodiodes doped with Beryllium Dec. 29, 2009
7598517 Superjunction trench device and method Oct. 6, 2009
7586116 Semiconductor device having a semiconductor-on-insulator configuration and a superlattice Sep. 8, 2009
7514328 Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween Apr. 7, 2009
7459720 Single crystal wafer and solar battery cell Dec. 2, 2008
7435988 Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel Oct. 14, 2008
7417227 Scanning interference electron microscope Aug. 26, 2008
7375368 Superlattice for fabricating nanowires May. 20, 2008
7365357 Strain inducing multi-layer cap Apr. 29, 2008
7279701 Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions Oct. 9, 2007
7198832 Method for edge sealing barrier films Apr. 3, 2007
7141807 Nanowire capillaries for mass spectrometry Nov. 28, 2006
7102145 System and method for improving spatial resolution of electron holography Sep. 5, 2006
7061014 Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film Jun. 13, 2006
7038234 Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs May. 2, 2006
7023010 Si/C superlattice useful for semiconductor devices Apr. 4, 2006
7009224 Metamorphic long wavelength high-speed photodiode Mar. 7, 2006
6998306 Semiconductor memory device having a multiple tunnel junction pattern and method of fabricating the same Feb. 14, 2006
6914008 Structure having pores and its manufacturing method Jul. 5, 2005
6914256 Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein Jul. 5, 2005
6900479 Stochastic assembly of sublithographic nanoscale interfaces May. 31, 2005
6900466 Semiconductor component for generating polychromatic electromagnetic radiation May. 31, 2005
6897472 Semiconductor device including MOSFET having band-engineered superlattice May. 24, 2005

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