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Class Information
Number: 257/27
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Ballistic transport device > Field effect transistor
Description: Subject matter wherein the ballistic transport device is a field effect transistor, i.e., one which has two or more terminals denoted as source and gate with a conduction channel therebetween, and in which the current through the conducting channel is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof.

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8703558 Graphene device and method for manufacturing the same Apr. 22, 2014
8680507 A1N inter-layers in III-N material grown on DBR/silicon substrate Mar. 25, 2014
8674379 Light-emitting device package and method of manufacturing the same Mar. 18, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8659006 Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devices Feb. 25, 2014
8642996 Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates Feb. 4, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8629428 Line-tunneling tunnel field-effect transistor (TFET) and manufacturing method Jan. 14, 2014
8624223 Side-gate defined tunable nanoconstriction in double-gated graphene multilayers Jan. 7, 2014
8617941 High-speed graphene transistor and method of fabrication by patternable hard mask materials Dec. 31, 2013
8618534 Field-effect transistor with a dielectric layer having therein denatured albumen Dec. 31, 2013
8614435 Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices Dec. 24, 2013
8614141 Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices Dec. 24, 2013
8614136 Techniques for fabricating janus MEMS transistors Dec. 24, 2013
8603872 Field effect device provided with a localized dopant diffusion barrier area and fabrication method Dec. 10, 2013
8598590 Organic light emitting diode display device Dec. 3, 2013
8581233 Variable capacitor single-electron transistor including a P-N junction gate electrode Nov. 12, 2013
8575665 Graphene electronic device and method of fabricating the same Nov. 5, 2013
8575663 High-sensitivity nanoscale wire sensors Nov. 5, 2013
8575624 Semiconductor device Nov. 5, 2013
8507892 Omega shaped nanowire tunnel field effect transistors Aug. 13, 2013
8507893 Electronic device, light-receiving and light-emitting device, electronic integrated circuit and optical integrated circuit using the devices Aug. 13, 2013
8455922 Programmable gate III-nitride semiconductor device Jun. 4, 2013
8431924 Control of tunneling junction in a hetero tunnel field effect transistor Apr. 30, 2013
8426891 Semiconductor device and method of fabricating the same Apr. 23, 2013
8421120 Field effect transistor capable of reducing shift of threshold voltage Apr. 16, 2013
8344359 Transistor having thermo electron cooling Jan. 1, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8304760 Sidewall graphene devices for 3-D electronics Nov. 6, 2012
8299455 Semiconductor structures having improved contact resistance Oct. 30, 2012
8288760 Field effect transistor, integrated circuit element, and method for manufacturing the same Oct. 16, 2012
8274072 Ultrathin spacer formation for carbon-based FET Sep. 25, 2012
8193562 Enhancement mode gallium nitride power devices Jun. 5, 2012
8174049 Semiconductor device and method of fabricating the same May. 8, 2012
8148718 Low voltage transistors Apr. 3, 2012
8058643 Electrochemical memory with internal boundary Nov. 15, 2011
8030688 Ohmic metal contact protection using an encapsulation layer Oct. 4, 2011
8017935 Parallel redundant single-electron device and method of manufacture Sep. 13, 2011
7994542 Semiconductor device Aug. 9, 2011
7947977 Thin film transistor May. 24, 2011
7928442 Optical device having strained buried channel Apr. 19, 2011
7919791 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same Apr. 5, 2011
7915643 Enhancement mode gallium nitride power devices Mar. 29, 2011
7910736 Method for producing organic field-effect transistors Mar. 22, 2011
7851784 Nanotube array electronic devices Dec. 14, 2010
7825434 Nitride semiconductor device Nov. 2, 2010
7795648 Semiconductor device comprising capacitor and method of fabricating the same Sep. 14, 2010
7795622 Compound semiconductor device Sep. 14, 2010
7728324 Field effect transistor, integrated circuit element, and method for manufacturing the same Jun. 1, 2010
7700942 Semiconductor device including an embedded contact plug Apr. 20, 2010

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