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Class Information
Number: 257/269
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor) > Enhancement mode > With means to adjust barrier height (e.g., doping profile)
Description: Subject matter including means to adjust the electronic height of the Schottky barrier gate junction, e.g., a profiled impurity dopant concentration.










Patents under this class:

Patent Number Title Of Patent Date Issued
8629015 Manufacturing of electronic components Jan. 14, 2014
8618583 Junction gate field effect transistor structure having n-channel Dec. 31, 2013
8564017 Silicon carbide semiconductor device and method for manufacturing same Oct. 22, 2013
8546920 Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) Oct. 1, 2013
8338895 Semiconductor device and method of manufacturing the same Dec. 25, 2012
8334651 Electroluminescent device with electrical shunt Dec. 18, 2012
8319407 Straight tube LED lamp having buckle connecting device for securing all parts together as one body Nov. 27, 2012
8318561 Semiconductor device and method of manufacturing the same Nov. 27, 2012
8274209 Light emitting device having semiconductor laser and fluorescent material and method for manufacturing the same Sep. 25, 2012
8154090 Non-volatile two-transistor semiconductor memory cell and method for producing the same Apr. 10, 2012
8076711 Semiconductor device and method of manufacturing the same Dec. 13, 2011
8063406 Semiconductor device having a polysilicon layer with a non-constant doping profile Nov. 22, 2011
7960230 Semiconductor device and method of manufacturing the same Jun. 14, 2011
7879669 Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length Feb. 1, 2011
7772621 Semiconductor device with structured current spread region and method Aug. 10, 2010
7723758 Method for dopant calibration of delta doped multilayered structure May. 25, 2010
7651936 Method for patterning a semiconductor device Jan. 26, 2010
7592653 Stress relaxation for top of transistor gate Sep. 22, 2009
7417270 Distributed high voltage JFET Aug. 26, 2008
7326975 Buried channel type transistor having a trench gate and method of manufacturing the same Feb. 5, 2008
6870189 Pinch-off type vertical junction field effect transistor and method of manufacturing the same Mar. 22, 2005
6693331 Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation Feb. 17, 2004
6566696 Self-aligned VT implant May. 20, 2003
6521961 Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor Feb. 18, 2003
6365919 Silicon carbide junction field effect transistor Apr. 2, 2002
6329704 Ultra-shallow junction dopant layer having a peak concentration within a dielectric layer Dec. 11, 2001
6180959 Static induction semiconductor device, and driving method and drive circuit thereof Jan. 30, 2001
6037203 Method of fabricating a semiconductor device having triple well structure Mar. 14, 2000
5962893 Schottky tunneling device Oct. 5, 1999
5939757 Semiconductor device having triple well structure Aug. 17, 1999
5814832 Electron emitting semiconductor device Sep. 29, 1998
5548143 Metal oxide semiconductor transistor and a method for manufacturing the same Aug. 20, 1996
5532505 Field effect transistor including a cap with a doped layer formed therein Jul. 2, 1996
5462888 Process for manufacturing semiconductor BICMOS device Oct. 31, 1995
5401987 Self-cascoding CMOS device Mar. 28, 1995
5396132 MESFET mixer circuit having a pulse doped structure Mar. 7, 1995
5369294 Field effect transistor and method of fabricating Nov. 29, 1994
5338949 Semiconductor device having series-connected junction field effect transistors Aug. 16, 1994
5101254 Schottky barrier semiconductor photodetector including graded energy band gap layer Mar. 31, 1992
4984049 Static induction thyristor Jan. 8, 1991
4590502 Camel gate field effect transistor device May. 20, 1986
4486766 Schottky barrier field effect transistors Dec. 4, 1984
4407004 Self-aligned MESFET having reduced series resistance Sep. 27, 1983
4201997 MESFET semiconductor device and method of making May. 6, 1980
4202003 MESFET Semiconductor device and method of making May. 6, 1980
4170818 Barrier height voltage reference Oct. 16, 1979
3946415 Normally off schottky barrier field effect transistor and method of fabrication Mar. 23, 1976











 
 
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