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Class Information
Number: 257/268
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor) > Enhancement mode
Description: Subject matter wherein an increase in the magnitude of the gate bias voltage increases the operating current, only leakage current flows when the gate voltage is zero, and conduction does not begin until the gate voltage reaches a threshold value.

Sub-classes under this class:

Class Number Class Name Patents
257/269 With means to adjust barrier height (e.g., doping profile) 47

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8618583 Junction gate field effect transistor structure having n-channel Dec. 31, 2013
8609494 Surround gate CMOS semiconductor device Dec. 17, 2013
8592974 Package configurations for low EMI circuits Nov. 26, 2013
8455931 Package configurations for low EMI circuits Jun. 4, 2013
8378392 Trench MOSFET with body region having concave-arc shape Feb. 19, 2013
8373443 Logic circuit Feb. 12, 2013
8324056 Vertical type semiconductor device and method of manufacturing a vertical type semiconductor device Dec. 4, 2012
8212314 Semiconductor device and method for manufacturing the same Jul. 3, 2012
8207558 Semiconductor device, DC/DC converter and power supply Jun. 26, 2012
8159007 Providing current to compensate for spurious current while receiving signals through a line Apr. 17, 2012
8138529 Package configurations for low EMI circuits Mar. 20, 2012
8003971 Integrated circuit including memory element doped with dielectric material Aug. 23, 2011
7999258 Display substrate and method of manufacturing the same Aug. 16, 2011
7985991 MOSFET package Jul. 26, 2011
7952392 Logic circuit May. 31, 2011
7939391 III-Nitride devices with recessed gates May. 10, 2011
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 29, 2011
7879669 Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length Feb. 1, 2011
7795642 III-nitride devices with recessed gates Sep. 14, 2010
7687834 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 30, 2010
7504677 Multi-gate enhancement mode RF switch and bias arrangement Mar. 17, 2009
7470932 Liquid crystal display panel and fabricating method thereof Dec. 30, 2008
7439563 High-breakdown-voltage semiconductor device Oct. 21, 2008
7268378 Structure for reduced gate capacitance in a JFET Sep. 11, 2007
7250643 Semiconductor device and method of manufacturing the same Jul. 31, 2007
7202528 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making Apr. 10, 2007
7180105 Normally off JFET Feb. 20, 2007
7173284 Silicon carbide semiconductor device and manufacturing method Feb. 6, 2007
7026668 High-breakdown-voltage semiconductor device Apr. 11, 2006
7023033 Lateral junction field-effect transistor Apr. 4, 2006
6989558 Field effect transistor Jan. 24, 2006
6870189 Pinch-off type vertical junction field effect transistor and method of manufacturing the same Mar. 22, 2005
6855970 High-breakdown-voltage semiconductor device Feb. 15, 2005
6777722 Method and structure for double dose gate in a JFET Aug. 17, 2004
6690051 FLASH memory circuitry Feb. 10, 2004
6674145 Flash memory circuitry Jan. 6, 2004
6528405 Enhancement mode RF device and fabrication method Mar. 4, 2003
6521961 Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor Feb. 18, 2003
6368925 Method of forming an EPI-channel in a semiconductor device Apr. 9, 2002
6307223 Complementary junction field effect transistors Oct. 23, 2001
6285046 Controllable semiconductor structure with improved switching properties Sep. 4, 2001
6172406 Breakdown drain extended NMOS Jan. 9, 2001
6078094 Starter current source device with automatic shut-down capability and method for its manufacture Jun. 20, 2000
5949095 Enhancement type MESFET Sep. 7, 1999
5663589 Current regulating semiconductor integrated circuit device and fabrication method of the same Sep. 2, 1997
5627387 Overvoltage self-protection semiconductor device, method of fabrication thereof and semiconductor circuit using the same May. 6, 1997
5612547 Silicon carbide static induction transistor Mar. 18, 1997
5545905 Static induction semiconductor device with a static induction schottky shorted structure Aug. 13, 1996
5532511 Semiconductor device comprising a highspeed static induction transistor Jul. 2, 1996
5424562 Lateral static induction transistor Jun. 13, 1995

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