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Class Information
Number: 257/264
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor) > Vertical controlled current path > Enhancement mode or with high resistivity channel (e.g., doping of 10 15 cm -3 or less)
Description: Subject matter wherein an increase in the magnitude of the gate bias voltage increases the operating current, only leakage current flows when the gate voltage is zero, and conduction does not begin until the gate voltage reaches a threshold value; or the JFET has a channel made of relatively high electrical resistivity, e.g., due to doping with impurity ions of 1015










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8618583 Junction gate field effect transistor structure having n-channel Dec. 31, 2013
8569813 Inductive load driving circuit Oct. 29, 2013
8564017 Silicon carbide semiconductor device and method for manufacturing same Oct. 22, 2013
8264016 Semiconductor device including a channel stop zone Sep. 11, 2012
8022463 Semiconductor device and method of manufacturing the same Sep. 20, 2011
8022478 Method of forming a multi-fin multi-gate field effect transistor with tailored drive current Sep. 20, 2011
7879669 Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length Feb. 1, 2011
7700980 Structure and fabrication of field-effect transistor for alleviating short-channel effects Apr. 20, 2010
7659563 Complementary metal-oxide-silicon (CMOS) image sensor and method of forming the same Feb. 9, 2010
7535039 Vertically integrated dual gate transistor structure and method of making same May. 19, 2009
7439563 High-breakdown-voltage semiconductor device Oct. 21, 2008
7387936 Semiconductor device and method of fabricating the same Jun. 17, 2008
7342264 Memory cell and method for manufacturing the same Mar. 11, 2008
7268378 Structure for reduced gate capacitance in a JFET Sep. 11, 2007
7221009 Semiconductor device May. 22, 2007
7211845 Multiple doped channel in a multiple doped gate junction field effect transistor May. 1, 2007
7187021 Static induction transistor Mar. 6, 2007
7180105 Normally off JFET Feb. 20, 2007
7169620 Method of reducing the surface roughness of spin coated polymer films Jan. 30, 2007
7164154 Gate wiring layout for silicon-carbide-based junction field effect transistor Jan. 16, 2007
7026668 High-breakdown-voltage semiconductor device Apr. 11, 2006
6960797 Semiconductor device Nov. 1, 2005
6946374 Methods of manufacturing flash memory semiconductor devices Sep. 20, 2005
6917069 Semiconductor memory array of floating gate memory cells with buried bit-line and vertical word line transistor Jul. 12, 2005
6894346 Semiconductor device May. 17, 2005
6870189 Pinch-off type vertical junction field effect transistor and method of manufacturing the same Mar. 22, 2005
6855970 High-breakdown-voltage semiconductor device Feb. 15, 2005
6774408 Trench gate power device having a concentration at channel layer higher than a base layer and uniformly distributed along the depth of the trench and its manufacturing method Aug. 10, 2004
6750477 Static induction transistor Jun. 15, 2004
6693300 Semiconductor thin film and semiconductor device Feb. 17, 2004
6674107 Enhancement mode junction field effect transistor with low on resistance Jan. 6, 2004
6555857 Semiconductor device Apr. 29, 2003
6396084 Structure of semiconductor rectifier May. 28, 2002
6307223 Complementary junction field effect transistors Oct. 23, 2001
6069371 Semiconductor rectifier and a method for driving the same May. 30, 2000
5962893 Schottky tunneling device Oct. 5, 1999
5945701 Static induction transistor Aug. 31, 1999
5903020 Silicon carbide static induction transistor structure May. 11, 1999
5895939 Silicon carbide field effect transistor with increased avalanche withstand capability Apr. 20, 1999
5883406 High-speed and high-density semiconductor memory Mar. 16, 1999
5877538 Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench Mar. 2, 1999
5808328 High-speed and high-density semiconductor memory Sep. 15, 1998
5780893 Non-volatile semiconductor memory device including memory transistor with a composite gate structure Jul. 14, 1998
5753938 Static-induction transistors having heterojunction gates and methods of forming same May. 19, 1998
5663582 High frequency static induction transistor having high output Sep. 2, 1997
5612547 Silicon carbide static induction transistor Mar. 18, 1997
5602405 Semiconductor device with base formed by the junction of two semiconductors of the same conductive type Feb. 11, 1997
5585654 Field effect transistor having saturated drain current characteristic Dec. 17, 1996
5557119 Field effect transistor having unsaturated drain current characteristic Sep. 17, 1996
5545905 Static induction semiconductor device with a static induction schottky shorted structure Aug. 13, 1996

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