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Class Information
Number: 257/263
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor) > Vertical controlled current path
Description: Subject matter wherein the operating current of the JFET has a path perpendicular to a main surface of the JFET and is controlled by the gate electrode of the device.


Sub-classes under this class:

Class Number Class Name Patents
257/264 Enhancement mode or with high resistivity channel (e.g., doping of 10 15 cm -3 or less) 137
257/265 In integrated circuit 43
257/266 With multiple parallel current paths (e.g., grid gate) 152


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7439563 High-breakdown-voltage semiconductor device Oct. 21, 2008
7432145 Power semiconductor device with a base region and method of manufacturing same Oct. 7, 2008
7372087 Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage May. 13, 2008
7342264 Memory cell and method for manufacturing the same Mar. 11, 2008
7304335 Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance a Dec. 4, 2007
7268379 Memory cell and method for manufacturing the same Sep. 11, 2007
7265398 Method and structure for composite trench fill Sep. 4, 2007
7265393 Thin-film transistor with vertical channel region Sep. 4, 2007
7250643 Semiconductor device and method of manufacturing the same Jul. 31, 2007
7242040 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors Jul. 10, 2007
7211844 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage May. 1, 2007
7211845 Multiple doped channel in a multiple doped gate junction field effect transistor May. 1, 2007
7173284 Silicon carbide semiconductor device and manufacturing method Feb. 6, 2007
7098519 Avalanche radiation detector Aug. 29, 2006
7075132 Programmable junction field effect transistor and method for programming the same Jul. 11, 2006
7067363 Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances Jun. 27, 2006
7019344 Lateral drift vertical metal-insulator semiconductor field effect transistor Mar. 28, 2006
6894346 Semiconductor device May. 17, 2005
6894319 Semiconductor device May. 17, 2005
6885078 Circuit isolation utilizing MeV implantation Apr. 26, 2005
6870189 Pinch-off type vertical junction field effect transistor and method of manufacturing the same Mar. 22, 2005
6825513 High power mosfet semiconductor device Nov. 30, 2004
6818940 Insulated gate bipolar transistor having trench gates of rectangular upper surfaces with different widths Nov. 16, 2004
6809354 Semiconductor device Oct. 26, 2004
6803629 Vertical field-effect transistor with compensation zones and terminals at one side of a semiconductor body Oct. 12, 2004
6784470 Buffer, buffer operation and method of manufacture Aug. 31, 2004
6737677 Wide bandgap semiconductor device and method for manufacturing the same May. 18, 2004
6734494 Vertical field effect transistor May. 11, 2004
6734476 Semiconductor devices having group III-V compound layers May. 11, 2004
6703665 Transistor Mar. 9, 2004
6693314 Junction field-effect transistor with more highly doped connecting region Feb. 17, 2004
6690040 Vertical replacement-gate junction field-effect transistor Feb. 10, 2004
6674107 Enhancement mode junction field effect transistor with low on resistance Jan. 6, 2004
6674101 GaN-based semiconductor device Jan. 6, 2004
6653740 Vertical conduction flip-chip device with bump contacts on single surface Nov. 25, 2003
6633063 Low voltage transient voltage suppressor and method of making Oct. 14, 2003
6632723 Semiconductor device Oct. 14, 2003
6590240 Method of manufacturing unipolar components Jul. 8, 2003
6551865 Silicon carbide semiconductor device and method of fabricating the same Apr. 22, 2003
6518608 Semiconductor integrated circuit device with enhanced protection from electrostatic breakdown Feb. 11, 2003
6504232 Integrated circuit components thereof and manufacturing method Jan. 7, 2003
6459108 Semiconductor configuration and current limiting device Oct. 1, 2002
6433370 Method and apparatus for cylindrical semiconductor diodes Aug. 13, 2002
6380569 High power unipolar FET switch Apr. 30, 2002
6347050 Semiconductor memory cell and method of manufacturing the same Feb. 12, 2002
6344379 Semiconductor device with an undulating base region and method therefor Feb. 5, 2002
6340623 Method of fabricating semiconductor device Jan. 22, 2002
6329692 Circuit and method for reducing parasitic bipolar effects during eletrostatic discharges Dec. 11, 2001
6309920 Bipolar transistor which can be controlled by field effect and method for producing the same Oct. 30, 2001
6307223 Complementary junction field effect transistors Oct. 23, 2001

1 2 3


 
 
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