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Class Information
Number: 257/262
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor) > Combined with insulated gate field effect transistor (igfet)
Description: Subject matter including a field effect transistor having a gate (control) electrode which is electrically insulated from the channel and other electrodes of the transistor.

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8691638 High-K metal gate device Apr. 8, 2014
8680538 Silicon carbide semiconductor device Mar. 25, 2014
8652916 Self aligned impact-ionization MOS (I-MOS) device and methods of manufacture Feb. 18, 2014
8653510 Enhanced E-field sensing using negative capacitance FET subthreshold slope enhancement Feb. 18, 2014
8618557 Wide-band-gap reverse-blocking MOS-type semiconductor device Dec. 31, 2013
8610182 Semiconductor device and method for manufacturing the same Dec. 17, 2013
8513713 Junction field effect transistor with region of reduced doping Aug. 20, 2013
8502280 Fin-JFET Aug. 6, 2013
8492747 Transistor and flat panel display including thin film transistor Jul. 23, 2013
8441046 Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances May. 14, 2013
8426279 Asymmetric transistor Apr. 23, 2013
8415719 Low gate charging rectifier having MOS structure and P-N junction, and manufacturing method of the same Apr. 9, 2013
8373204 Semiconductor device and method of manufacturing thereof Feb. 12, 2013
8373208 Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode Feb. 12, 2013
8362528 Logic switch and circuits utilizing the switch Jan. 29, 2013
8354292 CMOS image sensor having a crosstalk prevention structure and method of manufacturing the same Jan. 15, 2013
8354698 VDMOS and JFET integrated semiconductor device Jan. 15, 2013
8350291 Modulation-doped multi-gate devices Jan. 8, 2013
8304780 Printed dopant layers Nov. 6, 2012
8288824 Semiconductor device including insulated gate bipolar transistor and diode Oct. 16, 2012
8278682 Semiconductor device Oct. 2, 2012
8269262 Vertical junction field effect transistor with mesa termination and method of making the same Sep. 18, 2012
8269263 High current density power field effect transistor Sep. 18, 2012
8264015 Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor Sep. 11, 2012
8222681 Bipolar semiconductor device and manufacturing method Jul. 17, 2012
8222649 Semiconductor device and method of manufacturing the same Jul. 17, 2012
8188518 Thin film transistor structure of pixel with drain extensions overlapping gate electrode and gate electrode extention May. 29, 2012
8183606 Semiconductor device and method of manufacturing the same May. 22, 2012
8183605 Reducing transistor junction capacitance by recessing drain and source regions May. 22, 2012
8178403 Method of producing precision vertical and horizontal layers in a vertical semiconductor structure May. 15, 2012
8174057 CMOS image device with local impurity region May. 8, 2012
8154059 Semiconductor device and method for manufacturing the same Apr. 10, 2012
8148758 High voltage semiconductor device with JFET regions containing dielectrically isolated junctions and method of fabricating the same Apr. 3, 2012
8138530 CMOS image sensor having a crosstalk prevention structure Mar. 20, 2012
8120071 MEMFET RAM Feb. 21, 2012
8120063 Modulation-doped multi-gate devices Feb. 21, 2012
8120074 Bipolar semiconductor device and manufacturing method Feb. 21, 2012
8105925 Method for forming an insulated gate field effect device Jan. 31, 2012
8072011 Semiconductor device and method for operating the same Dec. 6, 2011
8049223 Semiconductor device with large blocking voltage Nov. 1, 2011
8044442 Metal-insulator-metal (MIM) switching devices Oct. 25, 2011
8021971 Structure and method to form a thermally stable silicide in narrow dimension gate stacks Sep. 20, 2011
8022414 Silicon carbide semiconductor device, and method of manufacturing the same Sep. 20, 2011
8008731 IGFET device having a RF capability Aug. 30, 2011
7977196 Semiconductor device with increased channel area and fabrication method thereof Jul. 12, 2011
7977749 Semiconductor device with increased channel area Jul. 12, 2011
7956390 Semiconductor device and manufacturing method thereof Jun. 7, 2011
7939863 Area efficient 3D integration of low noise JFET and MOS in linear bipolar CMOS process May. 10, 2011
7893906 Display device having improved substrate and method of manufacture Feb. 22, 2011
7879669 Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length Feb. 1, 2011

1 2 3 4

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