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Class Information
Number: 257/256
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Junction field effect transistor (unipolar transistor)
Description: Subject matter wherein the field effect device is a junction field effect transistor, i.e., in which current flow through a thin channel of semiconductor material is controlled by an electric field applied to a control region or electrode in rectifying contact (i.e., a pn junction or Schottky barrier junction) with the semiconductor material of the channel, so that the depletion region extending into the channel from the rectifying contact reduces the thickness of the undepleted portion of the channel to reduce the current flow through the channel.

Sub-classes under this class:

Class Number Class Name Patents
257/262 Combined with insulated gate field effect transistor (igfet) 174
257/259 Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor) 85
257/268 Enhancement mode 82
257/272 Junction field effect transistor in integrated circuit 207
257/261 Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure) 125
257/257 Light responsive or combined with light responsive device 312
257/271 Load element or constant current source (e.g., with source to gate connection) 36
257/270 Plural, separately connected, gates control same channel region 184
257/279 Pn junction gate in compound semiconductor material (e.g., gaas) 115
257/260 Same channel controlled by both junction and insulated gate electrodes, or by both schottky barrier and pn junction gates (e.g., "taper isolated" memory cell) 121
257/263 Vertical controlled current path 191
257/287 With multiple channels or channel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power jfet) 259
257/286 With non-uniform channel thickness or width 98
257/285 With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface) 179
257/280 With schottky gate 465

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8704279 Embedded JFETs for high voltage applications Apr. 22, 2014
8659081 Transistor with reduced channel length variation Feb. 25, 2014
8653535 Silicon carbide semiconductor device having a contact region that includes a first region and a second region, and process for production thereof Feb. 18, 2014
8643065 Semiconductor device and method for manufacturing the same Feb. 4, 2014
8634229 Dynamic memory cell provided with a field-effect transistor having zero swing Jan. 21, 2014
8618583 Junction gate field effect transistor structure having n-channel Dec. 31, 2013
8598636 Heat dissipation structure of SOI field effect transistor Dec. 3, 2013
8592289 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer Nov. 26, 2013
8587037 Test structure to monitor the in-situ channel temperature of field effect transistors Nov. 19, 2013
8581310 Z.sup.2FET field-effect transistor with a vertical subthreshold slope and with no impact ionization Nov. 12, 2013
8581298 Semiconductor device Nov. 12, 2013
8564017 Silicon carbide semiconductor device and method for manufacturing same Oct. 22, 2013
8552474 Junction field effect transistor structure Oct. 8, 2013
8552476 Schottky barrier diode and MOSFET semiconductor device Oct. 8, 2013
8530903 Layout design for a high power, GaN-based FET having interdigitated electrodes Sep. 10, 2013
8519410 Silicon carbide vertical-sidewall dual-mesa static induction transistor Aug. 27, 2013
8519485 Pillar structure for memory device and method Aug. 27, 2013
8513713 Junction field effect transistor with region of reduced doping Aug. 20, 2013
8513712 Method and apparatus for forming a semiconductor gate Aug. 20, 2013
8513675 Vertical junction field effect transistors having sloped sidewalls and methods of making Aug. 20, 2013
8502282 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making Aug. 6, 2013
8497527 Device having active region with lower electron concentration Jul. 30, 2013
8492803 Field effect device with reduced thickness gate Jul. 23, 2013
8481372 JFET device structures and methods for fabricating the same Jul. 9, 2013
8482029 Semiconductor device and integrated circuit including the semiconductor device Jul. 9, 2013
8450119 Magnetic tunnel junction patterning using Ta/TaN as hard mask May. 28, 2013
8436403 Semiconductor device including transistor provided with sidewall and electronic appliance May. 7, 2013
8421127 Semiconductor device and method for fabricating the same Apr. 16, 2013
8406575 Junction field effect transistor geometry for optical modulators Mar. 26, 2013
8390038 MIM capacitor and method of making same Mar. 5, 2013
8390039 Junction field effect transistor Mar. 5, 2013
8373207 Semiconductor device Feb. 12, 2013
8373208 Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode Feb. 12, 2013
8283705 Junction field effect transistor, integrated circuit for switching power supply, and switching power supply Oct. 9, 2012
8278691 Low power memory device with JFET device structures Oct. 2, 2012
8243770 Quantum photonic imagers and methods of fabrication thereof Aug. 14, 2012
8227838 Semiconductor device and method of manufacturing the same Jul. 24, 2012
8217460 Semiconductor device with electrostatic protection device Jul. 10, 2012
8193537 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors Jun. 5, 2012
8188482 SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method May. 29, 2012
8134188 Circuits and methods for improved FET matching Mar. 13, 2012
8120050 Light-emitting element Feb. 21, 2012
8115234 Semiconductor device Feb. 14, 2012
8110857 Low noise JFET Feb. 7, 2012
8084783 GaN-based device cascoded with an integrated FET/Schottky diode device Dec. 27, 2011
8076679 Nitride-based semiconductor light-emitting diode and illuminating device Dec. 13, 2011
8063406 Semiconductor device having a polysilicon layer with a non-constant doping profile Nov. 22, 2011
8063439 Semiconductor device and fabrication method thereof Nov. 22, 2011
8058655 Vertical junction field effect transistors having sloped sidewalls and methods of making Nov. 15, 2011
8058674 Alternate 4-terminal JFET geometry to reduce gate to source capacitance Nov. 15, 2011

1 2 3 4 5

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