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Class Information
Number: 257/250
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) > Electrode structures or materials > Plural gate levels
Description: Subject matter wherein the electrode structures include more than one level of gate electrodes relative to a main surface of the device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7425473 |
Method of fabricating a thin film transistor for an array panel |
Sep. 16, 2008 |
| 7385249 |
Transistor structure and integrated circuit |
Jun. 10, 2008 |
| 7372086 |
Semiconductor device including MOSFET and isolation region for isolating the MOSFET |
May. 13, 2008 |
| 7326634 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
Feb. 5, 2008 |
| 7312486 |
Stripe board dummy metal for reducing coupling capacitance |
Dec. 25, 2007 |
| 7288805 |
Double gate isolation |
Oct. 30, 2007 |
| 7274053 |
Fin device with capacitor integrated under gate electrode |
Sep. 25, 2007 |
| 7205185 |
Self-aligned planar double-gate process by self-aligned oxidation |
Apr. 17, 2007 |
| 7199409 |
Device for subtracting or adding charge in a charge-coupled device |
Apr. 3, 2007 |
| 7164161 |
Method of formation of dual gate structure for imagers |
Jan. 16, 2007 |
| 7154135 |
Double-gated transistor circuit |
Dec. 26, 2006 |
| 7154118 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
Dec. 26, 2006 |
| 7148548 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode |
Dec. 12, 2006 |
| 7145220 |
Fin semiconductor device and method for fabricating the same |
Dec. 5, 2006 |
| 7119384 |
Field effect transistor and method for fabricating it |
Oct. 10, 2006 |
| 7119385 |
Semiconductor apparatus having first and second gate electrodes |
Oct. 10, 2006 |
| 7112858 |
Semiconductor device and manufacturing method of the same |
Sep. 26, 2006 |
| 7102181 |
Structure and method for dual-gate FET with SOI substrate |
Sep. 5, 2006 |
| 7078748 |
Multi-layer gate stack structure comprising a metal layer for a FET device, and method for fabricating the same |
Jul. 18, 2006 |
| 7064394 |
Nonvolatile semiconductor memory device |
Jun. 20, 2006 |
| 7045814 |
OFET structures with both n- and p-type channels |
May. 16, 2006 |
| 7034346 |
Semiconductor device and method for manufacturing the same |
Apr. 25, 2006 |
| 7030431 |
Metal gate with composite film stack |
Apr. 18, 2006 |
| 7019342 |
Double-gated transistor circuit |
Mar. 28, 2006 |
| 7015550 |
Nonvolatile semiconductor memory device |
Mar. 21, 2006 |
| 7012294 |
Semiconductor constructions |
Mar. 14, 2006 |
| 6998656 |
Transparent double-injection field-effect transistor |
Feb. 14, 2006 |
| 6987294 |
Charge-coupled device and method of fabricating the same |
Jan. 17, 2006 |
| 6979866 |
Semiconductor device with SOI region and bulk region and method of manufacture thereof |
Dec. 27, 2005 |
| 6974953 |
Infrared sensor device and manufacturing method thereof |
Dec. 13, 2005 |
| 6946377 |
Multiple-gate MOSFET device with lithography independent silicon body thickness and methods for fabricating the same |
Sep. 20, 2005 |
| 6946696 |
Self-aligned isolation double-gate FET |
Sep. 20, 2005 |
| 6919647 |
SRAM cell |
Jul. 19, 2005 |
| 6905922 |
Dual fully-silicided gate MOSFETs |
Jun. 14, 2005 |
| 6855969 |
Semiconductor device having a plurality of gate electrodes and manufacturing method thereof |
Feb. 15, 2005 |
| 6855989 |
Damascene finfet gate with selective metal interdiffusion |
Feb. 15, 2005 |
| 6853020 |
Double-gate semiconductor device |
Feb. 8, 2005 |
| 6833569 |
Self-aligned planar double-gate process by amorphization |
Dec. 21, 2004 |
| 6828607 |
Discontinuous nitride structure for non-volatile transistors |
Dec. 7, 2004 |
| 6818469 |
Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same |
Nov. 16, 2004 |
| 6803611 |
Use of indium to define work function of p-type doped polysilicon |
Oct. 12, 2004 |
| 6740910 |
Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor |
May. 25, 2004 |
| 6720593 |
Charge-coupled device having a reduced width for barrier sections in a transfer channel |
Apr. 13, 2004 |
| 6710382 |
Semiconductor device and method for fabricating the same |
Mar. 23, 2004 |
| 6639575 |
Liquid crystal display |
Oct. 28, 2003 |
| 6627470 |
Array substrate for use in LCD device and method of fabricating same |
Sep. 30, 2003 |
| 6597024 |
Charge-coupled image sensor comprising gate electrodes interconnected by shunt electrodes |
Jul. 22, 2003 |
| 6573541 |
Charge coupled device with channel well |
Jun. 3, 2003 |
| 6528831 |
Solid-state image pickup device |
Mar. 4, 2003 |
| 6518106 |
Semiconductor device and a method therefor |
Feb. 11, 2003 |
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