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Class Information
Number: 257/247
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) > Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit") > Uniphase or virtual phase structure
Description: Subject matter wherein the device has one set of gates (control electrodes) or virtual phase structure.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7479671 |
Thin film phase change memory cell formed on silicon-on-insulator substrate |
Jan. 20, 2009 |
| 7476917 |
Phase-changeable memory devices including nitrogen and/or silicon dopants |
Jan. 13, 2009 |
| 7462900 |
Phase changeable memory devices including nitrogen and/or silicon |
Dec. 9, 2008 |
| 7425735 |
Multi-layer phase-changeable memory devices |
Sep. 16, 2008 |
| 7423300 |
Single-mask phase change memory element |
Sep. 9, 2008 |
| RE40028 |
Liquid crystal display device and method of manufacturing the same |
Jan. 22, 2008 |
| 7265397 |
CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture |
Sep. 4, 2007 |
| 7115927 |
Phase changeable memory devices |
Oct. 3, 2006 |
| 6987294 |
Charge-coupled device and method of fabricating the same |
Jan. 17, 2006 |
| 6969878 |
Surround-gate semiconductor device encapsulated in an insulating medium |
Nov. 29, 2005 |
| 6337284 |
Liquid crystal display device and method of manufacturing the same |
Jan. 8, 2002 |
| 6278142 |
Semiconductor image intensifier |
Aug. 21, 2001 |
| 6266087 |
Circuit and technique for smear subtraction in CCD image sensors |
Jul. 24, 2001 |
| 6166412 |
SOI device with double gate and method for fabricating the same |
Dec. 26, 2000 |
| 6078069 |
Bidirectional horizontal charge transfer device |
Jun. 20, 2000 |
| 6028348 |
Low thermal impedance integrated circuit |
Feb. 22, 2000 |
| 5877520 |
Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element |
Mar. 2, 1999 |
| 5825840 |
Interline sensor employing photocapacitor gate |
Oct. 20, 1998 |
| 5567641 |
Method of making a bipolar gate charge coupled device with clocked virtual phase |
Oct. 22, 1996 |
| 5502318 |
Bipolar gate charge coupled device with clocked virtual phase |
Mar. 26, 1996 |
| 5464996 |
Process tracking bias generator for advanced lateral overflow antiblooming drain |
Nov. 7, 1995 |
| 5461247 |
Load resistance structure for source follower in charge transfer device |
Oct. 24, 1995 |
| 5453632 |
Advanced lateral overflow drain antiblooming structure for virtual gate photosites |
Sep. 26, 1995 |
| 5449931 |
Charge coupled imaging device having multilayer gate electrode wiring |
Sep. 12, 1995 |
| 5402459 |
Frame transfer image sensor with electronic shutter |
Mar. 28, 1995 |
| 5357548 |
Reversible charge transfer and logic utilizing them |
Oct. 18, 1994 |
| 5341008 |
Bulk charge modulated device photocell with lateral charge drain |
Aug. 23, 1994 |
| 5286990 |
Top buss virtual phase frame interline transfer CCD image sensor |
Feb. 15, 1994 |
| 5182623 |
Charge coupled device/charge super sweep image system and method for making |
Jan. 26, 1993 |
| 5151380 |
Method of making top buss virtual phase frame interline transfer CCD image sensor |
Sep. 29, 1992 |
| 5130774 |
Antiblooming structure for solid-state image sensor |
Jul. 14, 1992 |
| 5077592 |
Front-illuminated CCD with open pinned-phase region and two-phase transfer gate regions |
Dec. 31, 1991 |
| 5073808 |
Solid state semiconductor device |
Dec. 17, 1991 |
| 4994875 |
Virtual phase charge transfer device |
Feb. 19, 1991 |
| 4995061 |
Two-phase CCD imager cell for TV interlace operation |
Feb. 19, 1991 |
| 4994405 |
Area image sensor with transparent electrodes |
Feb. 19, 1991 |
| 4992841 |
Pseudo uniphase charge coupled device |
Feb. 12, 1991 |
| 4992392 |
Method of making a virtual phase CCD |
Feb. 12, 1991 |
| 4984047 |
Solid-state image sensor |
Jan. 8, 1991 |
| 4974043 |
Solid-state image sensor |
Nov. 27, 1990 |
| 4952523 |
Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface |
Aug. 28, 1990 |
| 4926225 |
High performance extended wavelength imager and method of use |
May. 15, 1990 |
| 4906584 |
Fast channel single phase buried channel CCD |
Mar. 6, 1990 |
| 4900688 |
Pseudo uniphase charge coupled device fabrication by self-aligned virtual barrier and virtual gate formation |
Feb. 13, 1990 |
| 4872043 |
Charge coupled device with reduced surface state at semiconductor-insulator interface |
Oct. 3, 1989 |
| 4821081 |
Large pitch CCD with high charge transfer efficiency |
Apr. 11, 1989 |
| 4814844 |
Split two-phase CCD clocking gate apparatus |
Mar. 21, 1989 |
| 4806498 |
Semiconductor charge-coupled device and process of fabrication thereof |
Feb. 21, 1989 |
| 4798958 |
CCD imaging sensors |
Jan. 17, 1989 |
| 4779124 |
Virtual phase buried channel CCD |
Oct. 18, 1988 |
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