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Class Information
Number: 257/246
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) > Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit")
Description: Subject matter including a plurality of gate regions or doping variation regions to permit unidirectional charge packet transfer by symmetrical or unsymmetrically phased electrical control signals applied to the device gate or gates.










Sub-classes under this class:

Class Number Class Name Patents
257/248 2-phase 152
257/247 Uniphase or virtual phase structure 87


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8692379 Integrated circuit connector access region Apr. 8, 2014
8686482 CMOS image sensor Apr. 1, 2014
8680500 Phase change memory devices having buried metal silicide patterns Mar. 25, 2014
8674334 Memory elements using self-aligned phase change material layers and methods of manufacturing same Mar. 18, 2014
8637910 Image sensor Jan. 28, 2014
8624331 Non-volatile memory devices, methods of manufacturing and methods of operating the same Jan. 7, 2014
8574991 Asymmetric transistor devices formed by asymmetric spacers and tilted implantation Nov. 5, 2013
8445887 Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same May. 21, 2013
8384135 Phase-change random access memory device and method of manufacturing the same Feb. 26, 2013
8372680 Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays Feb. 12, 2013
8361824 Method for forming lens, method for manufacturing semiconductor apparatus, and electronic information device Jan. 29, 2013
8361833 Upwardly tapering heaters for phase change memories Jan. 29, 2013
8362576 Transistor with reduced depletion field width Jan. 29, 2013
8319291 Non-volatile memory device with data storage layer Nov. 27, 2012
8293600 Thermally stabilized electrode structure Oct. 23, 2012
8222075 Nonvolatile semiconductor memory device using a variable resistance film and method of manufacturing the same Jul. 17, 2012
8188833 Variable resistance element and manufacturing method of the same May. 29, 2012
8158482 Asymmetric transistor devices formed by asymmetric spacers and tilted implantation Apr. 17, 2012
8143089 Self-align planerized bottom electrode phase change memory and manufacturing method Mar. 27, 2012
8125006 Array of low resistive vertical diodes and method of production Feb. 28, 2012
8115239 Electric device comprising phase change material Feb. 14, 2012
8093632 Phase change memory device accounting for volume change of phase change material and method for manufacturing the same Jan. 10, 2012
8084842 Thermally stabilized electrode structure Dec. 27, 2011
8058702 Phase change memory cell Nov. 15, 2011
8013318 Phase change random access memory for actively removing residual heat and method of manufacturing the same Sep. 6, 2011
7993961 Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit lines Aug. 9, 2011
7952121 Image sensor and sensor unit May. 31, 2011
7897969 Solid-state image pickup device, driving method for solid-state image pickup device, and image pickup apparatus Mar. 1, 2011
7883930 Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof Feb. 8, 2011
7880206 CMOS image sensor with asymmetric well structure of source follower Feb. 1, 2011
7863655 Phase change memory cells with dual access devices Jan. 4, 2011
7851828 Phase change memory cell with transparent conducting oxide for electrode contact material Dec. 14, 2010
7825396 Self-align planerized bottom electrode phase change memory and manufacturing method Nov. 2, 2010
7821042 Imaging device including a multiplier electrode Oct. 26, 2010
7719039 Phase change memory structures including pillars May. 18, 2010
7715248 Phase-change TaN resistor based triple-state/multi-state read only memory May. 11, 2010
7643078 CCD with improved charge transfer Jan. 5, 2010
7589364 Electrically rewritable non-volatile memory element and method of manufacturing the same Sep. 15, 2009
7589367 Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines Sep. 15, 2009
7569845 Phase-change memory and fabrication method thereof Aug. 4, 2009
7479671 Thin film phase change memory cell formed on silicon-on-insulator substrate Jan. 20, 2009
7476917 Phase-changeable memory devices including nitrogen and/or silicon dopants Jan. 13, 2009
7462900 Phase changeable memory devices including nitrogen and/or silicon Dec. 9, 2008
7459715 Resistance change memory device Dec. 2, 2008
7459716 Resistance change memory device Dec. 2, 2008
7449710 Vacuum jacket for phase change memory element Nov. 11, 2008
7440019 Solid-state image pick-up device Oct. 21, 2008
7425735 Multi-layer phase-changeable memory devices Sep. 16, 2008
7423300 Single-mask phase change memory element Sep. 9, 2008
7402851 Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same Jul. 22, 2008

1 2 3 4










 
 
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