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Class Information
Number: 257/246
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) > Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit")
Description: Subject matter including a plurality of gate regions or doping variation regions to permit unidirectional charge packet transfer by symmetrical or unsymmetrically phased electrical control signals applied to the device gate or gates.


Sub-classes under this class:

Class Number Class Name Patents
257/248 2-phase 131
257/247 Uniphase or virtual phase structure 80


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7589364 Electrically rewritable non-volatile memory element and method of manufacturing the same Sep. 15, 2009
7589367 Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines Sep. 15, 2009
7569845 Phase-change memory and fabrication method thereof Aug. 4, 2009
7479671 Thin film phase change memory cell formed on silicon-on-insulator substrate Jan. 20, 2009
7476917 Phase-changeable memory devices including nitrogen and/or silicon dopants Jan. 13, 2009
7462900 Phase changeable memory devices including nitrogen and/or silicon Dec. 9, 2008
7459715 Resistance change memory device Dec. 2, 2008
7459716 Resistance change memory device Dec. 2, 2008
7449710 Vacuum jacket for phase change memory element Nov. 11, 2008
7440019 Solid-state image pick-up device Oct. 21, 2008
7425735 Multi-layer phase-changeable memory devices Sep. 16, 2008
7423300 Single-mask phase change memory element Sep. 9, 2008
7402851 Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same Jul. 22, 2008
7385235 Spacer chalcogenide memory device Jun. 10, 2008
7381981 Phase-change TaN resistor based triple-state/multi-state read only memory Jun. 3, 2008
7374174 Small electrode for resistance variable devices May. 20, 2008
7348620 Forming phase change memories Mar. 25, 2008
7332370 Method of manufacturing a phase change RAM device utilizing reduced phase change current Feb. 19, 2008
7307267 Electric device with phase change material and parallel heater Dec. 11, 2007
7265397 CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture Sep. 4, 2007
7233054 Phase change material and non-volatile memory device using the same Jun. 19, 2007
7157754 Solid-state imaging device and interline transfer CCD image sensor Jan. 2, 2007
7154549 Solid state image sensor having a single-layered electrode structure Dec. 26, 2006
7132702 Image sensor Nov. 7, 2006
7119353 Electric device with phase change material and method of manufacturing the same Oct. 10, 2006
7115927 Phase changeable memory devices Oct. 3, 2006
7075131 Phase change memory device Jul. 11, 2006
7030410 Resistance variable device Apr. 18, 2006
7015520 Charge-coupled devices having efficient charge transfer rates Mar. 21, 2006
6995388 Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode Feb. 7, 2006
6987294 Charge-coupled device and method of fabricating the same Jan. 17, 2006
6970197 CCD imaging device and driving method thereof Nov. 29, 2005
6967344 Multi-terminal chalcogenide switching devices Nov. 22, 2005
6885021 Adhesion layer for a polymer memory device and method therefor Apr. 26, 2005
6867425 Lateral phase change memory and method therefor Mar. 15, 2005
6864503 Spacer chalcogenide memory method and device Mar. 8, 2005
6862333 CMD and CMD-carrying CCD device Mar. 1, 2005
6841811 Large area, fast frame rate charge coupled device Jan. 11, 2005
6833559 Non-volatile resistance variable device Dec. 21, 2004
6720593 Charge-coupled device having a reduced width for barrier sections in a transfer channel Apr. 13, 2004
6586784 Accumulation mode clocking of a charge-coupled device Jul. 1, 2003
6573541 Charge coupled device with channel well Jun. 3, 2003
6437383 Dual trench isolation for a phase-change memory cell and method of making same Aug. 20, 2002
6417531 Charge transfer device with final potential well close to floating diffusion region Jul. 9, 2002
6078069 Bidirectional horizontal charge transfer device Jun. 20, 2000
6043523 Charge coupled device and method of fabricating the same Mar. 28, 2000
6011282 Charge coupled device with a buried channel two-phase driven two-layer electrode structure Jan. 4, 2000
5986296 CCD type semiconductor device Nov. 16, 1999
5892251 Apparatus for transferring electric charges Apr. 6, 1999
5862197 Charge coupled device having CCIR/EIA mode coversion function Jan. 19, 1999

1 2 3


 
 
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