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Browse by Category: Main > Physics
Class Information
Number: 257/244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Comprising a groove
Description: Subject matter wherein a surface of the device includes an elongated indentation.










Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8648394 Method for growing conformal EPI layers and structure thereof Feb. 11, 2014
8637370 Integration of trench MOS with low voltage integrated circuits Jan. 28, 2014
8629527 Semiconductor structures Jan. 14, 2014
8604522 Field effect type semiconductor device and method for manufacturing the same Dec. 10, 2013
8598689 Methods of manufacturing semiconductor structures and devices including nanotubes, and semiconductor structures, devices, and systems fabricated using such methods Dec. 3, 2013
8564057 Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield Oct. 22, 2013
8497530 Semiconductor structures including dual fins Jul. 30, 2013
8487352 Metal oxide semiconductor (MOS) transistors having a recessed gate electrode Jul. 16, 2013
8462249 Solid-state imaging device, method of manufacturing the same, and electronic apparatus Jun. 11, 2013
8455926 Systems, methods, and apparatus of a low conductance silicon micro-leak for mass spectrometer inlet Jun. 4, 2013
8399915 Semiconductor device Mar. 19, 2013
8373204 Semiconductor device and method of manufacturing thereof Feb. 12, 2013
8330215 Transistor including bulb-type recess channel and method for fabricating the same Dec. 11, 2012
8310003 Solid-state imaging device with vertical gate electrode and method of manufacturing the same Nov. 13, 2012
8283709 Semiconductor structure Oct. 9, 2012
8264029 Convex shaped thin-film transistor device Sep. 11, 2012
8242544 Semiconductor structure having reduced amine-based contaminants Aug. 14, 2012
8222101 Method of fabricating a MOS transistor having a gate insulation layer with a lateral portion and a vertical portion Jul. 17, 2012
8138526 Semiconductor structures including dual fins Mar. 20, 2012
8120070 Wiring board and method for manufacturing the same Feb. 21, 2012
8039876 Metal oxide semiconductor (MOS) transistors having a recessed gate electrode Oct. 18, 2011
8035150 Nonvolatile semiconductor memory device and method for manufacturing the same Oct. 11, 2011
7989307 Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same Aug. 2, 2011
7888722 Trench capacitors and memory cells using trench capacitors Feb. 15, 2011
7867870 Semiconductor device and method for forming device isolation film of semiconductor device Jan. 11, 2011
7868394 Metal-oxide-semiconductor transistor and method of manufacturing the same Jan. 11, 2011
7858506 Diodes, and methods of forming diodes Dec. 28, 2010
7804134 MOSFET on SOI device Sep. 28, 2010
7791161 Semiconductor devices employing poly-filled trenches Sep. 7, 2010
7741226 Optimal tungsten through wafer via and process of fabricating same Jun. 22, 2010
7700979 Semiconductor device having bulb-shaped recess gate and method for fabricating the same Apr. 20, 2010
7663164 Semiconductor device with reduced leakage protection diode Feb. 16, 2010
7608904 Semiconductor device components with conductive vias and systems including the components Oct. 27, 2009
7605056 Method of manufacturing a semiconductor device including separation by physical force Oct. 20, 2009
7479670 Organic electronic component with high resolution structuring, and method of the production thereof Jan. 20, 2009
7479671 Thin film phase change memory cell formed on silicon-on-insulator substrate Jan. 20, 2009
7442984 Semiconductor memory device and manufacturing method thereof Oct. 28, 2008
7436009 Via structures and trench structures and dual damascene structures Oct. 14, 2008
7436030 Strained MOSFETs on separated silicon layers Oct. 14, 2008
7425751 Method to reduce junction leakage current in strained silicon on silicon-germanium devices Sep. 16, 2008
7345350 Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias Mar. 18, 2008
7253493 High density access transistor having increased channel width and methods of fabricating such devices Aug. 7, 2007
7109557 Sacrificial dielectric planarization layer Sep. 19, 2006
6992340 Semiconductor device Jan. 31, 2006
6906419 Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same Jun. 14, 2005
6876034 Semiconductor device having active grooves Apr. 5, 2005
6828606 Substrate with embedded free space optical interconnects Dec. 7, 2004
6818949 Semiconductor device and method for fabricating the same Nov. 16, 2004
6812508 Semiconductor substrate and method for fabricating the same Nov. 2, 2004
6806805 Low loss high Q inductor Oct. 19, 2004

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