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Class Information
Number: 257/24
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Field effect device
Description: Subject matter wherein the quantum well device is a field effect device, i.e., one which has two or more terminals denoted as source and gate, with a conduction channel therebetween, and in which the current through the conducting channel is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8710489 Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same Apr. 29, 2014
8710490 Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer Apr. 29, 2014
8692229 Replacement contacts for all-around contacts Apr. 8, 2014
8686402 Tunnel field effect transistor and method of manufacturing same Apr. 1, 2014
8685843 Direct growth of graphene on substrates Apr. 1, 2014
8686571 Bonding layer structure and method for wafer to wafer bonding Apr. 1, 2014
8680512 Graphene transistor with a self-aligned gate Mar. 25, 2014
8680511 Bilayer gate dielectric with low equivalent oxide thickness for graphene devices Mar. 25, 2014
8680510 Method of forming compound semiconductor Mar. 25, 2014
8681411 Polariton mode optical switch with composite structure Mar. 25, 2014
8674342 Pad-less gate-all around semiconductor nanowire FETs on bulk semiconductor wafers Mar. 18, 2014
8674341 High-mobility multiple-gate transistor with improved on-to-off current ratio Mar. 18, 2014
8669598 Unit pixel of image sensor and photo detector thereof Mar. 11, 2014
8669599 Unit pixel of image sensor and photo detector thereof Mar. 11, 2014
8664641 Nano device integrated on graphene and monocrystalline graphite Mar. 4, 2014
8664640 Non-volatile memory device including semiconductor charge-trapping material particles Mar. 4, 2014
8637849 Vertical nanowire FET devices Jan. 28, 2014
8633471 Apparatus and methods for forming a modulation doped non-planar transistor Jan. 21, 2014
8633470 Techniques and configurations to impart strain to integrated circuit devices Jan. 21, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8629047 Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures Jan. 14, 2014
8624216 Planar electronic semiconductor device Jan. 7, 2014
8624318 Semiconductor switching circuit employing quantum dot structures Jan. 7, 2014
8618581 Nanofludic field effect transistor based on surface charge modulated nanochannel Dec. 31, 2013
8610172 FETs with hybrid channel materials Dec. 17, 2013
8610104 Nanotube array injection lasers Dec. 17, 2013
8603872 Field effect device provided with a localized dopant diffusion barrier area and fabrication method Dec. 10, 2013
8604486 Enhancement mode group III-V high electron mobility transistor (HEMT) and method for fabrication Dec. 10, 2013
8597964 Manufacturing method of LED package structure Dec. 3, 2013
8592803 Germanium-based quantum well devices Nov. 26, 2013
8587065 Local bottom gates for graphene and carbon nanotube devices Nov. 19, 2013
8581233 Variable capacitor single-electron transistor including a P-N junction gate electrode Nov. 12, 2013
8575595 P-type semiconductor devices Nov. 5, 2013
8575596 Non-planar germanium quantum well devices Nov. 5, 2013
8575624 Semiconductor device Nov. 5, 2013
8575665 Graphene electronic device and method of fabricating the same Nov. 5, 2013
8569806 Unit pixel of image sensor and photo detector thereof Oct. 29, 2013
8564022 Power device and method for manufacturing the same Oct. 22, 2013
RE44538 Indium gallium nitride channel high electron mobility transistors, and method of making the same Oct. 15, 2013
8541774 Hybrid CMOS technology with nanowire devices and double gated planar devices Sep. 24, 2013
8541773 Vertical tunneling negative differential resistance devices Sep. 24, 2013
8536621 Quantum-well-based semiconductor devices Sep. 17, 2013
8536578 Thin film transistor comprising nanowires and fabrication method thereof Sep. 17, 2013
8513646 Solution-processed high mobility inorganic thin-film transistors Aug. 20, 2013
8507892 Omega shaped nanowire tunnel field effect transistors Aug. 13, 2013
8497499 Method to modify the conductivity of graphene Jul. 30, 2013
8487385 Uncooled IR detector arrays based on nanoelectromechanical systems Jul. 16, 2013
8472239 Nanowire mesh FET with multiple threshold voltages Jun. 25, 2013
8466451 Single gate inverter nanowire mesh Jun. 18, 2013
8455860 Reducing source/drain resistance of III-V based transistors Jun. 4, 2013

1 2 3 4 5 6 7 8 9 10 11

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