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Class Information
Number: 257/227
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) > With specified dopant (e.g., photoionizable, "extrinsic" detectors for infrared)
Description: Subject matter wherein the non-electrical responsive device contains specific impurity dopants.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7586123 |
Thin film transistor (TFT) array substrate and fabricating method thereof that protect the TFT and a pixel electrode without a protective film |
Sep. 8, 2009 |
| 7554142 |
Ultrashallow photodiode using indium |
Jun. 30, 2009 |
| 7514729 |
Solid-state imaging device and method of driving the same |
Apr. 7, 2009 |
| 7414262 |
Electronic devices and methods for forming the same |
Aug. 19, 2008 |
| 7405434 |
Quantum dot conjugates in a sub-micrometer fluidic channel |
Jul. 29, 2008 |
| 7393723 |
Method of manufacturing a semiconductor device |
Jul. 1, 2008 |
| 7355268 |
High reflector tunable stress coating, such as for a MEMS mirror |
Apr. 8, 2008 |
| 7259444 |
Optoelectronic device with patterned ion implant subcollector |
Aug. 21, 2007 |
| 7202511 |
Near-infrared visible light photon counter |
Apr. 10, 2007 |
| 7145189 |
Photon amplification for image sensors |
Dec. 5, 2006 |
| 7129531 |
Programmable resistance memory element with titanium rich adhesion layer |
Oct. 31, 2006 |
| 7105872 |
Thin film semiconductor element and method of manufacturing the same |
Sep. 12, 2006 |
| 7057262 |
High reflector tunable stress coating, such as for a MEMS mirror |
Jun. 6, 2006 |
| 7045785 |
Method for manufacturing an infrared sensor device |
May. 16, 2006 |
| 6946689 |
Control TFT for OLED display |
Sep. 20, 2005 |
| 6897498 |
Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform |
May. 24, 2005 |
| 6825516 |
CMOS imager and method of formation |
Nov. 30, 2004 |
| 6746939 |
Production method for solid imaging device |
Jun. 8, 2004 |
| 6670657 |
Integrated circuit having photodiode device and associated fabrication process |
Dec. 30, 2003 |
| 6617659 |
Semiconductor device having heat detecting element and insulating cavity and method of manufacturing thereof |
Sep. 9, 2003 |
| 6570196 |
Lipid vesicles or lipid bilayers on chips |
May. 27, 2003 |
| 6555854 |
Charge coupled device with multi-focus lengths |
Apr. 29, 2003 |
| 6548879 |
Semiconductor device having heat detecting element and insulating cavity and method of manufacturing the same |
Apr. 15, 2003 |
| 6545302 |
Image sensor capable of decreasing leakage current between diodes and method for fabricating the same |
Apr. 8, 2003 |
| 6339236 |
Light responsive semiconductor switch with shorted load protection |
Jan. 15, 2002 |
| 6333526 |
Charge transfer device and a manufacturing process therefor |
Dec. 25, 2001 |
| 6278327 |
Negative voltage detector |
Aug. 21, 2001 |
| 5990506 |
Active pixel sensors with substantially planarized color filtering elements |
Nov. 23, 1999 |
| 5861642 |
Semiconductor device having charge transfer device equipped with three semiconductor layers of same conductivity type with mutually different concentrations |
Jan. 19, 1999 |
| 5767538 |
Integrated photodiode/transimpedance amplifier |
Jun. 16, 1998 |
| 5744831 |
Solid-state image pick-up device |
Apr. 28, 1998 |
| 5734195 |
Semiconductor wafer for epitaxially grown devices having a sub-surface getter region |
Mar. 31, 1998 |
| 5635738 |
Infrared solid-state image sensing apparatus |
Jun. 3, 1997 |
| 5581099 |
CCD solid state image device which has a semiconductor substrate with a P-type region with an N-type region formed therein by injection of arsenic |
Dec. 3, 1996 |
| 5262661 |
Solid-state image pickup device, having increased charge storage and improved electronic shutter operation |
Nov. 16, 1993 |
| 5237533 |
High speed switched sense amplifier |
Aug. 17, 1993 |
| 5155362 |
Infra-red radiation imaging device arrangements |
Oct. 13, 1992 |
| 5005063 |
CCD imaging sensor with flashed backside metal film |
Apr. 2, 1991 |
| 4952995 |
Infrared imager |
Aug. 28, 1990 |
| 4809048 |
Charge-coupled device having channel region with alternately changing potential in a direction perpendicular to charge transfer |
Feb. 28, 1989 |
| 4695715 |
Infrared imaging array employing metal tabs as connecting means |
Sep. 22, 1987 |
| 4585934 |
Self-calibration technique for charge-coupled device imagers |
Apr. 29, 1986 |
| 4503450 |
Accumulation mode bulk channel charge-coupled devices |
Mar. 5, 1985 |
| 4488165 |
Extrinsic infrared detector with a charge reset function |
Dec. 11, 1984 |
| 4321614 |
Radiant energy sensor with blooming control |
Mar. 23, 1982 |
| 4316103 |
Circuit for coupling signals from a sensor |
Feb. 16, 1982 |
| 4313127 |
Signal detection method for IR detector having charge readout structure |
Jan. 26, 1982 |
| 4276099 |
Fabrication of infra-red charge coupled devices |
Jun. 30, 1981 |
| 4213137 |
Monolithic variable size detector |
Jul. 15, 1980 |
| 4210922 |
Charge coupled imaging device having selective wavelength sensitivity |
Jul. 1, 1980 |
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