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Class Information
Number: 257/224
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Majority signal carrier (e.g., buried or bulk channel, or peristaltic) > Channel confinement
Description: Subject matter wherein the majority carrier charge transfer device has means to restrict the dimensions of the thin semiconductor conductive path region (charge transfer channel) between the source and drain of the device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7541627 |
Method and apparatus for improving sensitivity in vertical color CMOS image sensors |
Jun. 2, 2009 |
| 7456448 |
Semiconductor device and method for producing the same |
Nov. 25, 2008 |
| 7420147 |
Microchannel plate and method of manufacturing microchannel plate |
Sep. 2, 2008 |
| 7365380 |
Photoelectric conversion device, method for manufacturing the same and image pickup system |
Apr. 29, 2008 |
| 7329926 |
Semiconductor device with constricted current passage |
Feb. 12, 2008 |
| 7285808 |
Solid-state imaging device and method for manufacturing solid-state imaging device |
Oct. 23, 2007 |
| 7235824 |
Active gate CCD image sensor |
Jun. 26, 2007 |
| 7183597 |
Quantum wire gate device and method of making same |
Feb. 27, 2007 |
| 7078745 |
CMOS imager with enhanced transfer of charge and low voltage operation |
Jul. 18, 2006 |
| 6998656 |
Transparent double-injection field-effect transistor |
Feb. 14, 2006 |
| 6806805 |
Low loss high Q inductor |
Oct. 19, 2004 |
| 6759721 |
Integrated semiconductor DRAM-type memory device and corresponding fabrication process |
Jul. 6, 2004 |
| 6573541 |
Charge coupled device with channel well |
Jun. 3, 2003 |
| 6555854 |
Charge coupled device with multi-focus lengths |
Apr. 29, 2003 |
| 6483132 |
Charge coupled device with separate isolation region |
Nov. 19, 2002 |
| 6369415 |
Back side thinned CCD with high speed channel stop |
Apr. 9, 2002 |
| 6369414 |
Charge coupled device having charge accumulating layer free from tow-dimensional effect under miniaturization and process for fabrication thereof |
Apr. 9, 2002 |
| 6365945 |
Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch |
Apr. 2, 2002 |
| 6310933 |
Charge transferring device and charge transferring method which can reduce floating diffusion capacitance |
Oct. 30, 2001 |
| 6150680 |
Field effect semiconductor device having dipole barrier |
Nov. 21, 2000 |
| 6150678 |
Method and pattern for avoiding micro-loading effect in an etching process |
Nov. 21, 2000 |
| 6114718 |
Solid state image sensor and its fabrication |
Sep. 5, 2000 |
| 6020607 |
Semiconductor device having junction field effect transistors |
Feb. 1, 2000 |
| 5990503 |
Selectable resolution CCD sensor |
Nov. 23, 1999 |
| 5929471 |
Structure and method for CCD sensor stage selection |
Jul. 27, 1999 |
| 5910672 |
Semiconductor device and method of manufacturing the same |
Jun. 8, 1999 |
| 5793070 |
Reduction of trapping effects in charge transfer devices |
Aug. 11, 1998 |
| 5668390 |
Solid-state image sensor with element isolation region of high impurity concentration and method of manufacturing the same |
Sep. 16, 1997 |
| 5635738 |
Infrared solid-state image sensing apparatus |
Jun. 3, 1997 |
| 5627388 |
CCD-solid state image sensor using electron and hole signal charges and method for processing signal thereof |
May. 6, 1997 |
| 5612555 |
Full frame solid-state image sensor with altered accumulation potential and method for forming same |
Mar. 18, 1997 |
| 5576561 |
Radiation-tolerant imaging device |
Nov. 19, 1996 |
| 5514885 |
SOI methods and apparatus |
May. 7, 1996 |
| 5502318 |
Bipolar gate charge coupled device with clocked virtual phase |
Mar. 26, 1996 |
| 5491354 |
Floating gate charge detection node |
Feb. 13, 1996 |
| 5464997 |
Charge detection device, a method for producing the same, and a charge transfer and detection apparatus including such a charge detection device |
Nov. 7, 1995 |
| 5436476 |
CCD image sensor with active transistor pixel |
Jul. 25, 1995 |
| 5359213 |
Charge transfer device and solid state image sensor using the same |
Oct. 25, 1994 |
| 5357128 |
Charge detecting device |
Oct. 18, 1994 |
| 5345099 |
Semiconductor device |
Sep. 6, 1994 |
| 5341008 |
Bulk charge modulated device photocell with lateral charge drain |
Aug. 23, 1994 |
| 5338948 |
Charge-coupled device with open gate structure |
Aug. 16, 1994 |
| 5313080 |
Structure of a CCD image sensor particularly on an interline transfer method |
May. 17, 1994 |
| 5306931 |
CCD image sensor with improved antiblooming characteristics |
Apr. 26, 1994 |
| 5286988 |
Charge coupled device image sensor |
Feb. 15, 1994 |
| 5286989 |
Solid state imaging device |
Feb. 15, 1994 |
| 5286990 |
Top buss virtual phase frame interline transfer CCD image sensor |
Feb. 15, 1994 |
| 5283450 |
FIT-CCD image sensing device |
Feb. 1, 1994 |
| 5229630 |
Charge transfer and/or amplifying device of low noise to detect signal charges at a high conversion efficiency |
Jul. 20, 1993 |
| 5223727 |
Charge-coupled device having an improved electrode structure |
Jun. 29, 1993 |
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