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Class Information
Number: 257/224
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Majority signal carrier (e.g., buried or bulk channel, or peristaltic) > Channel confinement
Description: Subject matter wherein the majority carrier charge transfer device has means to restrict the dimensions of the thin semiconductor conductive path region (charge transfer channel) between the source and drain of the device.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8581387 Through wire interconnect (TWI) having bonded connection and encapsulating polymer layer Nov. 12, 2013
8487349 Method and apparatus for improving sensitivity in vertical color CMOS image sensors Jul. 16, 2013
8404523 Method for fabricating stacked semiconductor system with encapsulated through wire interconnects (TWI) Mar. 26, 2013
8217510 Semiconductor module system having stacked components with encapsulated through wire interconnects (TWI) Jul. 10, 2012
8203151 Semiconductor device and method for fabricating the same Jun. 19, 2012
8164086 Phase-controlled field effect transistor device and method for manufacturing thereof Apr. 24, 2012
8120167 System with semiconductor components having encapsulated through wire interconnects (TWI) Feb. 21, 2012
8093630 Semiconductor device and lateral diffused metal-oxide-semiconductor transistor Jan. 10, 2012
8039889 Non-volatile memory devices including stepped source regions and methods of fabricating the same Oct. 18, 2011
7883908 Method for fabricating semiconductor component having encapsulated through wire interconnect (TWI) Feb. 8, 2011
7858481 Method for fabricating transistor with thinned channel Dec. 28, 2010
7791161 Semiconductor devices employing poly-filled trenches Sep. 7, 2010
7737492 Semiconductor device for reducing interference between adjoining gates and method for manufacturing the same Jun. 15, 2010
7659612 Semiconductor components having encapsulated through wire interconnects (TWI) Feb. 9, 2010
7541627 Method and apparatus for improving sensitivity in vertical color CMOS image sensors Jun. 2, 2009
7456448 Semiconductor device and method for producing the same Nov. 25, 2008
7420147 Microchannel plate and method of manufacturing microchannel plate Sep. 2, 2008
7365380 Photoelectric conversion device, method for manufacturing the same and image pickup system Apr. 29, 2008
7329926 Semiconductor device with constricted current passage Feb. 12, 2008
7285808 Solid-state imaging device and method for manufacturing solid-state imaging device Oct. 23, 2007
7235824 Active gate CCD image sensor Jun. 26, 2007
7183597 Quantum wire gate device and method of making same Feb. 27, 2007
7078745 CMOS imager with enhanced transfer of charge and low voltage operation Jul. 18, 2006
6998656 Transparent double-injection field-effect transistor Feb. 14, 2006
6806805 Low loss high Q inductor Oct. 19, 2004
6759721 Integrated semiconductor DRAM-type memory device and corresponding fabrication process Jul. 6, 2004
6573541 Charge coupled device with channel well Jun. 3, 2003
6555854 Charge coupled device with multi-focus lengths Apr. 29, 2003
6483132 Charge coupled device with separate isolation region Nov. 19, 2002
6369415 Back side thinned CCD with high speed channel stop Apr. 9, 2002
6369414 Charge coupled device having charge accumulating layer free from tow-dimensional effect under miniaturization and process for fabrication thereof Apr. 9, 2002
6365945 Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch Apr. 2, 2002
6310933 Charge transferring device and charge transferring method which can reduce floating diffusion capacitance Oct. 30, 2001
6150678 Method and pattern for avoiding micro-loading effect in an etching process Nov. 21, 2000
6150680 Field effect semiconductor device having dipole barrier Nov. 21, 2000
6114718 Solid state image sensor and its fabrication Sep. 5, 2000
6020607 Semiconductor device having junction field effect transistors Feb. 1, 2000
5990503 Selectable resolution CCD sensor Nov. 23, 1999
5929471 Structure and method for CCD sensor stage selection Jul. 27, 1999
5910672 Semiconductor device and method of manufacturing the same Jun. 8, 1999
5793070 Reduction of trapping effects in charge transfer devices Aug. 11, 1998
5668390 Solid-state image sensor with element isolation region of high impurity concentration and method of manufacturing the same Sep. 16, 1997
5635738 Infrared solid-state image sensing apparatus Jun. 3, 1997
5627388 CCD-solid state image sensor using electron and hole signal charges and method for processing signal thereof May. 6, 1997
5612555 Full frame solid-state image sensor with altered accumulation potential and method for forming same Mar. 18, 1997
5576561 Radiation-tolerant imaging device Nov. 19, 1996
5514885 SOI methods and apparatus May. 7, 1996
5502318 Bipolar gate charge coupled device with clocked virtual phase Mar. 26, 1996
5491354 Floating gate charge detection node Feb. 13, 1996
5464997 Charge detection device, a method for producing the same, and a charge transfer and detection apparatus including such a charge detection device Nov. 7, 1995

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