| |
 |
|
Class Information
Number: 257/221
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Majority signal carrier (e.g., buried or bulk channel, or peristaltic) > Impurity concentration variation > Along the length of the channel (e.g., doping variations for transfer directionality)
Description: Subject matter wherein the impurity dopant ion concentration in the channel of the device varies along the length of the channel, whether the channel is horizontally or vertically oriented.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7586137 |
Non-volatile memory device and method of fabricating the same |
Sep. 8, 2009 |
| 7479669 |
Current aperture transistors and methods of fabricating same |
Jan. 20, 2009 |
| 7387908 |
CMOS imager with enhanced transfer of charge and low voltage operation and method of formation |
Jun. 17, 2008 |
| 7378714 |
Semiconductor device and its manufacturing method |
May. 27, 2008 |
| 7329926 |
Semiconductor device with constricted current passage |
Feb. 12, 2008 |
| 7157754 |
Solid-state imaging device and interline transfer CCD image sensor |
Jan. 2, 2007 |
| 7119379 |
Semiconductor device |
Oct. 10, 2006 |
| 7078745 |
CMOS imager with enhanced transfer of charge and low voltage operation |
Jul. 18, 2006 |
| 7075128 |
Charge transfer element having high output sensitivity |
Jul. 11, 2006 |
| 6949777 |
Method of controlling insulated gate transistor |
Sep. 27, 2005 |
| 6909126 |
Imager cell with pinned transfer gate |
Jun. 21, 2005 |
| 6867438 |
Solid-state imaging device and manufacturing method thereof |
Mar. 15, 2005 |
| 6847065 |
Radiation-hardened transistor fabricated by modified CMOS process |
Jan. 25, 2005 |
| 6787829 |
LCD panel |
Sep. 7, 2004 |
| 6762441 |
Imager cell with pinned transfer gate |
Jul. 13, 2004 |
| 6744083 |
Submicron MOSFET having asymmetric channel profile |
Jun. 1, 2004 |
| 6657243 |
Semiconductor device with SRAM section including a plurality of memory cells |
Dec. 2, 2003 |
| 6645839 |
Method for improving a doping profile for gas phase doping |
Nov. 11, 2003 |
| 6639259 |
Charge-coupled device |
Oct. 28, 2003 |
| 6603144 |
Solid-state imaging device and method for fabricating same |
Aug. 5, 2003 |
| 6590241 |
MOS transistors with improved gate dielectrics |
Jul. 8, 2003 |
| 6586784 |
Accumulation mode clocking of a charge-coupled device |
Jul. 1, 2003 |
| 6583474 |
Semiconductor device |
Jun. 24, 2003 |
| 6573541 |
Charge coupled device with channel well |
Jun. 3, 2003 |
| 6518605 |
Solid state imaging pickup device and method for manufacturing the same |
Feb. 11, 2003 |
| 6441409 |
Dual-line type charge transfer device |
Aug. 27, 2002 |
| 6426238 |
Charge transfer device and solid image pickup apparatus using the same |
Jul. 30, 2002 |
| 6420759 |
Semiconductor device |
Jul. 16, 2002 |
| 6333526 |
Charge transfer device and a manufacturing process therefor |
Dec. 25, 2001 |
| 6225669 |
Non-uniform gate/dielectric field effect transistor |
May. 1, 2001 |
| 6207981 |
Charge-coupled device with potential barrier and charge storage regions |
Mar. 27, 2001 |
| 6187649 |
Shallow trench isolation process |
Feb. 13, 2001 |
| 6184556 |
Semiconductor device |
Feb. 6, 2001 |
| 6146953 |
Fabrication method for mosfet device |
Nov. 14, 2000 |
| 6114718 |
Solid state image sensor and its fabrication |
Sep. 5, 2000 |
| 6111279 |
CCD type solid state image pick-up device |
Aug. 29, 2000 |
| 6097044 |
Charge transfer device and method for manufacturing the same |
Aug. 1, 2000 |
| 6081007 |
Semiconductor device comprising MIS transistor with high concentration channel injection region |
Jun. 27, 2000 |
| 6011282 |
Charge coupled device with a buried channel two-phase driven two-layer electrode structure |
Jan. 4, 2000 |
| 5986296 |
CCD type semiconductor device |
Nov. 16, 1999 |
| 5977561 |
Elevated source/drain MOSFET with solid phase diffused source/drain extension |
Nov. 2, 1999 |
| 5917208 |
Charge coupled device and electrode structure |
Jun. 29, 1999 |
| 5914506 |
Charge coupled device having two-layer electrodes and method of manufacturing the same |
Jun. 22, 1999 |
| 5910672 |
Semiconductor device and method of manufacturing the same |
Jun. 8, 1999 |
| 5869853 |
Linear charge-coupled device having improved charge transferring characteristics |
Feb. 9, 1999 |
| 5861642 |
Semiconductor device having charge transfer device equipped with three semiconductor layers of same conductivity type with mutually different concentrations |
Jan. 19, 1999 |
| 5828091 |
Interline charge coupled device solid state image sensor |
Oct. 27, 1998 |
| 5796801 |
Charge coupled device with high charge transfer efficiency |
Aug. 18, 1998 |
| 5793070 |
Reduction of trapping effects in charge transfer devices |
Aug. 11, 1998 |
| 5705836 |
Efficient charge transfer structure in large pitch charge coupled device |
Jan. 6, 1998 |
|
|
|
