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Class Information
Number: 257/220
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Majority signal carrier (e.g., buried or bulk channel, or peristaltic) > Impurity concentration variation > Vertically within channel (e.g., profiled)
Description: Subject matter wherein the impurity dopant ion concentration in the channel of the device varies across the channel in a direction perpendicular to a main surface of the device, regardless of the orientation of the channel (e.g., parallel or perpendicular to a main surface of the device).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8710665 Electronic component, a semiconductor wafer and a method for producing an electronic component Apr. 29, 2014
8624332 Vertical conduction power electronic device and corresponding realization method Jan. 7, 2014
8575624 Semiconductor device Nov. 5, 2013
8426895 Semiconductor device and manufacturing method of the same Apr. 23, 2013
8426260 Compound semiconductor device and method of manufacturing the same Apr. 23, 2013
8164086 Phase-controlled field effect transistor device and method for manufacturing thereof Apr. 24, 2012
8159008 Method of fabricating a trench-generated transistor structure Apr. 17, 2012
8097511 Semiconductor device having P-N column layer and method for manufacturing the same Jan. 17, 2012
8021949 Method and structure for forming finFETs with multiple doping regions on a same chip Sep. 20, 2011
7981705 Method of manufacturing a vertical type light-emitting diode Jul. 19, 2011
7960761 Semiconductor device having a recess channel transistor Jun. 14, 2011
7956387 Transistor and memory cell array Jun. 7, 2011
7884390 Structure and method of forming a topside contact to a backside terminal of a semiconductor device Feb. 8, 2011
7759729 Metal-oxide-semiconductor device including an energy filter Jul. 20, 2010
7682889 Trench field effect transistor and method of making it Mar. 23, 2010
7615449 Semiconductor device having a recess channel transistor Nov. 10, 2009
7510926 Technique for providing stress sources in MOS transistors in close proximity to a channel region Mar. 31, 2009
7420230 MOSFET-type semiconductor device, and method of manufacturing the same Sep. 2, 2008
7420246 Vertical type semiconductor device and method for manufacturing the same Sep. 2, 2008
7244977 Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage device Jul. 17, 2007
7211844 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage May. 1, 2007
7129533 High concentration indium fluorine retrograde wells Oct. 31, 2006
7105875 Lateral power diodes Sep. 12, 2006
7102914 Gate controlled floating well vertical MOSFET Sep. 5, 2006
7075128 Charge transfer element having high output sensitivity Jul. 11, 2006
7057302 Static random access memory Jun. 6, 2006
6940144 Semiconductor equipment Sep. 6, 2005
6781202 Semiconductor devices and their fabrication methods Aug. 24, 2004
6744083 Submicron MOSFET having asymmetric channel profile Jun. 1, 2004
6686604 Multiple operating voltage vertical replacement-gate (VRG) transistor Feb. 3, 2004
6664576 Polymer thin-film transistor with contact etch stops Dec. 16, 2003
6653740 Vertical conduction flip-chip device with bump contacts on single surface Nov. 25, 2003
6586784 Accumulation mode clocking of a charge-coupled device Jul. 1, 2003
6515317 Sidewall charge-coupled device with multiple trenches in multiple wells Feb. 4, 2003
6376312 Formation of non-volatile memory device comprised of an array of vertical field effect transistor structures Apr. 23, 2002
6373082 Compound semiconductor field effect transistor Apr. 16, 2002
6373080 Thin film transistor with electrode on one side of a trench Apr. 16, 2002
6146953 Fabrication method for mosfet device Nov. 14, 2000
6081007 Semiconductor device comprising MIS transistor with high concentration channel injection region Jun. 27, 2000
6060731 Insulated-gate semiconductor device having a contact region in electrical contact with a body region and a source region May. 9, 2000
6031259 Solid state image pickup device and manufacturing method therefor Feb. 29, 2000
5910672 Semiconductor device and method of manufacturing the same Jun. 8, 1999
5877520 Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element Mar. 2, 1999
5867215 Image sensor having multiple storage wells per pixel Feb. 2, 1999
5801408 Insulated gate semiconductor device and method of manufacturing the same Sep. 1, 1998
5635738 Infrared solid-state image sensing apparatus Jun. 3, 1997
5614740 High-speed peristaltic CCD imager with GaAs fet output Mar. 25, 1997
5578841 Vertical MOSFET device having frontside and backside contacts Nov. 26, 1996
5576561 Radiation-tolerant imaging device Nov. 19, 1996
5449931 Charge coupled imaging device having multilayer gate electrode wiring Sep. 12, 1995

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