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Class Information
Number: 257/219
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Majority signal carrier (e.g., buried or bulk channel, or peristaltic) > Impurity concentration variation
Description: Subject matter wherein the majority signal carrier charge transfer device contains impurity dopant ions which vary in terms of concentration in all or part of the channel of the device.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7589349 |
CMOS image sensor with asymmetric well structure of source follower |
Sep. 15, 2009 |
| 7586137 |
Non-volatile memory device and method of fabricating the same |
Sep. 8, 2009 |
| 7564078 |
Tunable semiconductor component provided with a current barrier |
Jul. 21, 2009 |
| 7535038 |
Solid-state imaging device and its manufacturing method |
May. 19, 2009 |
| 7514729 |
Solid-state imaging device and method of driving the same |
Apr. 7, 2009 |
| 7479668 |
Source/drain extension implant process for use with short time anneals |
Jan. 20, 2009 |
| 7456443 |
Transistors having buried n-type and p-type regions beneath the source region |
Nov. 25, 2008 |
| 7301183 |
Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers |
Nov. 27, 2007 |
| 7247890 |
Semiconductor device and manufacturing method thereof |
Jul. 24, 2007 |
| 7217989 |
Composition for selectively polishing silicon nitride layer and polishing method employing it |
May. 15, 2007 |
| 7211458 |
Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices |
May. 1, 2007 |
| 7190032 |
Insulated gate transistor |
Mar. 13, 2007 |
| 7157754 |
Solid-state imaging device and interline transfer CCD image sensor |
Jan. 2, 2007 |
| 7116583 |
Electrically programmable memory cell and methods for programming and reading from such a memory cell |
Oct. 3, 2006 |
| 7084441 |
Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same |
Aug. 1, 2006 |
| 7075128 |
Charge transfer element having high output sensitivity |
Jul. 11, 2006 |
| 7064476 |
Emitter |
Jun. 20, 2006 |
| 7038258 |
Semiconductor device having a localized halo implant therein and method of manufacture therefor |
May. 2, 2006 |
| 7023482 |
Processing apparatus |
Apr. 4, 2006 |
| 6974742 |
Method for fabricating complementary metal oxide semiconductor image sensor |
Dec. 13, 2005 |
| 6949777 |
Method of controlling insulated gate transistor |
Sep. 27, 2005 |
| 6878977 |
Photoelectric conversion device, and image sensor and image input system making use of the same |
Apr. 12, 2005 |
| 6847065 |
Radiation-hardened transistor fabricated by modified CMOS process |
Jan. 25, 2005 |
| 6744083 |
Submicron MOSFET having asymmetric channel profile |
Jun. 1, 2004 |
| 6642558 |
Method and apparatus of terminating a high voltage solid state device |
Nov. 4, 2003 |
| 6639259 |
Charge-coupled device |
Oct. 28, 2003 |
| 6583474 |
Semiconductor device |
Jun. 24, 2003 |
| 6545302 |
Image sensor capable of decreasing leakage current between diodes and method for fabricating the same |
Apr. 8, 2003 |
| 6541804 |
Junction-isolated lateral MOSFET for high-/low-side switches |
Apr. 1, 2003 |
| 6534822 |
Silicon on insulator field effect transistor with a double Schottky gate structure |
Mar. 18, 2003 |
| 6479846 |
Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity |
Nov. 12, 2002 |
| 6420759 |
Semiconductor device |
Jul. 16, 2002 |
| 6417531 |
Charge transfer device with final potential well close to floating diffusion region |
Jul. 9, 2002 |
| 6417532 |
Power semiconductor module for use in power conversion units with downsizing requirements |
Jul. 9, 2002 |
| 6407416 |
Semiconductor device |
Jun. 18, 2002 |
| 6184556 |
Semiconductor device |
Feb. 6, 2001 |
| 6146953 |
Fabrication method for mosfet device |
Nov. 14, 2000 |
| 6081007 |
Semiconductor device comprising MIS transistor with high concentration channel injection region |
Jun. 27, 2000 |
| 6081662 |
Semiconductor device including trench isolation structure and a method of manufacturing thereof |
Jun. 27, 2000 |
| 6043536 |
Semiconductor device |
Mar. 28, 2000 |
| 5910672 |
Semiconductor device and method of manufacturing the same |
Jun. 8, 1999 |
| 5861642 |
Semiconductor device having charge transfer device equipped with three semiconductor layers of same conductivity type with mutually different concentrations |
Jan. 19, 1999 |
| 5793070 |
Reduction of trapping effects in charge transfer devices |
Aug. 11, 1998 |
| 5705836 |
Efficient charge transfer structure in large pitch charge coupled device |
Jan. 6, 1998 |
| 5635738 |
Infrared solid-state image sensing apparatus |
Jun. 3, 1997 |
| 5612554 |
Charge detection device and driver thereof |
Mar. 18, 1997 |
| 5608242 |
Variable width CCD register with uniform pitch and charge storage capacity |
Mar. 4, 1997 |
| 5574307 |
Semiconductor device and method of producing the same |
Nov. 12, 1996 |
| 5548142 |
Solid-state imaging device capable of removing influence by false signals |
Aug. 20, 1996 |
| 5448089 |
Charge-coupled device having an improved charge-transfer efficiency over a broad temperature range |
Sep. 5, 1995 |
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