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Class Information
Number: 257/219
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Majority signal carrier (e.g., buried or bulk channel, or peristaltic) > Impurity concentration variation
Description: Subject matter wherein the majority signal carrier charge transfer device contains impurity dopant ions which vary in terms of concentration in all or part of the channel of the device.

Sub-classes under this class:

Class Number Class Name Patents
257/221 Along the length of the channel (e.g., doping variations for transfer directionality) 137
257/220 Vertically within channel (e.g., profiled) 78

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8686482 CMOS image sensor Apr. 1, 2014
8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles Feb. 4, 2014
8643068 Integrated circuit having field effect transistors and manufacturing method Feb. 4, 2014
8643073 Solid state imaging device Feb. 4, 2014
8637910 Image sensor Jan. 28, 2014
8628996 Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells Jan. 14, 2014
8541824 Electronic devices and systems, and methods for making and using the same Sep. 24, 2013
8476744 Thin film transistor with channel including microcrystalline and amorphous semiconductor regions Jul. 2, 2013
8426895 Semiconductor device and manufacturing method of the same Apr. 23, 2013
8426279 Asymmetric transistor Apr. 23, 2013
8410002 Semiconductor device and manufacturing method thereof Apr. 2, 2013
8361824 Method for forming lens, method for manufacturing semiconductor apparatus, and electronic information device Jan. 29, 2013
8247798 RF circuits including transistors having strained material layers Aug. 21, 2012
8217431 Solid-state image pickup device for preventing cross-talk between adjacent pixels and manufacturing method thereof Jul. 10, 2012
8211784 Method for manufacturing a semiconductor device with less leakage current induced by carbon implant Jul. 3, 2012
8193564 Silicon carbide semiconductor device including deep layer Jun. 5, 2012
8168505 Method of fabricating transistor with epitaxial layers having different germanium concentrations May. 1, 2012
8124979 Thin film transistor and method of manufacturing the same Feb. 28, 2012
8115242 Pinned photodiode CMOS pixel sensor Feb. 14, 2012
8105924 Deep trench based far subcollector reachthrough Jan. 31, 2012
8063406 Semiconductor device having a polysilicon layer with a non-constant doping profile Nov. 22, 2011
8030687 Field effect transistor incorporating at least one structure for imparting temperature-dependent strain on the channel region and associated method of forming the transistor Oct. 4, 2011
8021908 Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel Sep. 20, 2011
7992108 Impurity concentration distribution predicting method and program for deciding impurity concentration distribution Aug. 2, 2011
7943969 Transistor with a plurality of layers with different Ge concentrations May. 17, 2011
7939859 Solid state imaging device and method for manufacturing the same May. 10, 2011
7927941 Method of fabricating field effect transistors with different gate widths Apr. 19, 2011
7919793 Semiconductor integrated circuit Apr. 5, 2011
7915648 Light-receiving element and display device Mar. 29, 2011
7906776 RF circuits including transistors having strained material layers Mar. 15, 2011
7897969 Solid-state image pickup device, driving method for solid-state image pickup device, and image pickup apparatus Mar. 1, 2011
7892927 Transistor with a channel comprising germanium Feb. 22, 2011
7880206 CMOS image sensor with asymmetric well structure of source follower Feb. 1, 2011
7851798 Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel Dec. 14, 2010
7842979 Solid-state imaging device and method of driving the same Nov. 30, 2010
7816734 Field-effect transistor including localized halo ion regions, and semiconductor memory, memory card, and system including the same Oct. 19, 2010
7768039 Field effect transistors with different gate widths Aug. 3, 2010
7723741 Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers May. 25, 2010
7719060 Tensile strain source using silicon/germanium in globally strained silicon May. 18, 2010
7714364 Semiconductor device comprising gate electrode having arsenic and phosphorus May. 11, 2010
7709859 Cap layers including aluminum nitride for nitride-based transistors May. 4, 2010
7709828 RF circuits including transistors having strained material layers May. 4, 2010
7691734 Deep trench based far subcollector reachthrough Apr. 6, 2010
7655493 Multi spectral sensor Feb. 2, 2010
7589349 CMOS image sensor with asymmetric well structure of source follower Sep. 15, 2009
7586137 Non-volatile memory device and method of fabricating the same Sep. 8, 2009
7564078 Tunable semiconductor component provided with a current barrier Jul. 21, 2009
7535038 Solid-state imaging device and its manufacturing method May. 19, 2009
7514729 Solid-state imaging device and method of driving the same Apr. 7, 2009
7479668 Source/drain extension implant process for use with short time anneals Jan. 20, 2009

1 2 3

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