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Class Information
Number: 257/217
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Majority signal carrier (e.g., buried or bulk channel, or peristaltic) > Having a conductive means in direct contact with channel (e.g., non-insulated gate)
Description: Subject matter wherein an electrical conductor (e.g., electrode) directly contacts the channel region of the charge transfer device (e.g., a non-insulated gate (control) electrode).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7601983 |
Transistor and method of manufacturing the same |
Oct. 13, 2009 |
| 7572712 |
Method to form selective strained Si using lateral epitaxy |
Aug. 11, 2009 |
| 7465979 |
Semiconductor device and fabrication method thereof |
Dec. 16, 2008 |
| 7355248 |
Metal oxide semiconductor (MOS) device, metal oxide semiconductor (MOS) memory device, and method of manufacturing the same |
Apr. 8, 2008 |
| 7235824 |
Active gate CCD image sensor |
Jun. 26, 2007 |
| 7012285 |
Semiconductor device |
Mar. 14, 2006 |
| 6870207 |
III-V charge coupled device suitable for visible, near and far infra-red detection |
Mar. 22, 2005 |
| 6841811 |
Large area, fast frame rate charge coupled device |
Jan. 11, 2005 |
| 6809379 |
Field effect transistor and method for producing a field effect transistor |
Oct. 26, 2004 |
| 6777722 |
Method and structure for double dose gate in a JFET |
Aug. 17, 2004 |
| 6750485 |
Lock in pinned photodiode photodetector |
Jun. 15, 2004 |
| 6710381 |
Memory device structure with composite buried and raised bit line |
Mar. 23, 2004 |
| 6674133 |
Twin bit cell flash memory device |
Jan. 6, 2004 |
| 6670655 |
SOI CMOS device with body to gate connection |
Dec. 30, 2003 |
| 6664577 |
Semiconductor device includes gate insulating film having a high dielectric constant |
Dec. 16, 2003 |
| 6559486 |
Etching mask, process for forming contact holes using same, and semiconductor device made by the process |
May. 6, 2003 |
| 6518606 |
Semiconductor device permitting electrical measurement of contact alignment error |
Feb. 11, 2003 |
| 6515319 |
Field-effect-controlled transistor and method for fabricating the transistor |
Feb. 4, 2003 |
| 6459106 |
Dynamic threshold voltage devices with low gate to substrate resistance |
Oct. 1, 2002 |
| 6445019 |
Lateral semiconductor device for withstanding high reverse biasing voltages |
Sep. 3, 2002 |
| 6392260 |
Architecture for a tapped CCD array |
May. 21, 2002 |
| 6243434 |
BCD low noise high sensitivity charge detection amplifier for high performance image sensors |
Jun. 5, 2001 |
| 6175146 |
Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related i |
Jan. 16, 2001 |
| 6150680 |
Field effect semiconductor device having dipole barrier |
Nov. 21, 2000 |
| 5998847 |
Low voltage active body semiconductor device |
Dec. 7, 1999 |
| 5994728 |
Field effect transistor and method for producing the same |
Nov. 30, 1999 |
| 5814810 |
Interline sensor employing photocapacitor gate |
Sep. 29, 1998 |
| 5814832 |
Electron emitting semiconductor device |
Sep. 29, 1998 |
| 5640023 |
Spacer-type thin-film polysilicon transistor for low-power memory devices |
Jun. 17, 1997 |
| 5576561 |
Radiation-tolerant imaging device |
Nov. 19, 1996 |
| 5567641 |
Method of making a bipolar gate charge coupled device with clocked virtual phase |
Oct. 22, 1996 |
| 5546438 |
BCD low noise high sensitivity charge detection amplifier for high performance image sensors |
Aug. 13, 1996 |
| 5502318 |
Bipolar gate charge coupled device with clocked virtual phase |
Mar. 26, 1996 |
| 5497020 |
Charge drain for a MIS device |
Mar. 5, 1996 |
| 5491354 |
Floating gate charge detection node |
Feb. 13, 1996 |
| 5453630 |
Variable gain optical detector |
Sep. 26, 1995 |
| 5436476 |
CCD image sensor with active transistor pixel |
Jul. 25, 1995 |
| 5402459 |
Frame transfer image sensor with electronic shutter |
Mar. 28, 1995 |
| 5389806 |
Apparatus for reducing heterostructure acoustic charge transport device saw drive power requirements |
Feb. 14, 1995 |
| 5337340 |
Charge multiplying detector (CMD) suitable for small pixel CCD image sensors |
Aug. 9, 1994 |
| 5225798 |
Programmable transversal filter |
Jul. 6, 1993 |
| 5151380 |
Method of making top buss virtual phase frame interline transfer CCD image sensor |
Sep. 29, 1992 |
| 5140623 |
Input bias circuit for gate input type charge transfer device for controlling the potential level of the input signal |
Aug. 18, 1992 |
| 5128734 |
Surface channel hact |
Jul. 7, 1992 |
| 5043293 |
Dual oxide channel stop for semiconductor devices |
Aug. 27, 1991 |
| 5001530 |
Infrared Schottky junction charge coupled device |
Mar. 19, 1991 |
| 4995061 |
Two-phase CCD imager cell for TV interlace operation |
Feb. 19, 1991 |
| 4906584 |
Fast channel single phase buried channel CCD |
Mar. 6, 1990 |
| 4821081 |
Large pitch CCD with high charge transfer efficiency |
Apr. 11, 1989 |
| 4814843 |
Charge transfer device with pn junction gates |
Mar. 21, 1989 |
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