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Class Information
Number: 257/216
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Charge transfer device > Majority signal carrier (e.g., buried or bulk channel, or peristaltic)
Description: Subject matter wherein the transfer is by majority carriers of the semiconductor material, i.e., by electrons in n-type semiconductor material, and is by holes in p-type semiconductor material.

Sub-classes under this class:

Class Number Class Name Patents
257/224 Channel confinement 113
257/217 Having a conductive means in direct contact with channel (e.g., non-insulated gate) 94
257/218 High resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semiconductor) or minority carriers at input (i.e., surface channel input) 57
257/219 Impurity concentration variation 117
257/222 Responsive to non-electrical external signal (e.g., imager) 479

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8536625 Electronic shutter with photogenerated charge extinguishment capability for back-illuminated image sensors Sep. 17, 2013
8426280 Charge trap type non-volatile memory device and method for fabricating the same Apr. 23, 2013
8334551 Non-volatile semiconductor storage device Dec. 18, 2012
8207583 Memory device comprising an array portion and a logic portion Jun. 26, 2012
8193564 Silicon carbide semiconductor device including deep layer Jun. 5, 2012
8105924 Deep trench based far subcollector reachthrough Jan. 31, 2012
8101474 Structure and method of forming buried-channel graphene field effect device Jan. 24, 2012
8008147 Semiconductor device and method for manufacturing the same Aug. 30, 2011
7892927 Transistor with a channel comprising germanium Feb. 22, 2011
7842558 Masking process for simultaneously patterning separate regions Nov. 30, 2010
7759706 Solid-state imaging device having impurities with different diffusion coefficients Jul. 20, 2010
7691734 Deep trench based far subcollector reachthrough Apr. 6, 2010
7659569 Work function engineering for FN erase of a memory device with multiple charge storage elements in an undercut region Feb. 9, 2010
7646062 Semiconductor device comprising buried wiring layer Jan. 12, 2010
7535038 Solid-state imaging device and its manufacturing method May. 19, 2009
7414279 Semiconductor device with improved overlay margin and method of manufacturing the same Aug. 19, 2008
7351661 Semiconductor device having trench isolation layer and a method of forming the same Apr. 1, 2008
7173294 Image sensor with reduced sensitivity to gamma rays Feb. 6, 2007
7148543 Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions Dec. 12, 2006
7138671 Solid-state image sensor with photoelectric conversion units each having a first conductive-type impurity region boundary non-coplanar with second conductive-type impurity region boundaries Nov. 21, 2006
7098512 Layout patterns for deep well region to facilitate routing body-bias voltage Aug. 29, 2006
7091530 High-speed, high-sensitivity charge-coupled device with independent pixel control of charge collection and storage Aug. 15, 2006
7057302 Static random access memory Jun. 6, 2006
6936898 Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions Aug. 30, 2005
6780666 Imager photo diode capacitor structure with reduced process variation sensitivity Aug. 24, 2004
6777725 NROM memory circuit with recessed bitline Aug. 17, 2004
6734475 Charge pump device May. 11, 2004
6486489 Transistor Nov. 26, 2002
6465820 CMOS compatible single phase CCD charge transfer device Oct. 15, 2002
6448613 Fabrication of a field effect transistor with minimized parasitic Miller capacitance Sep. 10, 2002
6376868 Multi-layered gate for a CMOS imager Apr. 23, 2002
6369413 Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making Apr. 9, 2002
6355949 Solid state imaging apparatus with horizontal charge transfer register which can transfer signal charge faster Mar. 12, 2002
6194748 MOSFET with suppressed gate-edge fringing field effect Feb. 27, 2001
5978026 Solid-state image pickup device Nov. 2, 1999
5900654 Radiation hardened charge coupled device May. 4, 1999
5612554 Charge detection device and driver thereof Mar. 18, 1997
5608242 Variable width CCD register with uniform pitch and charge storage capacity Mar. 4, 1997
5514885 SOI methods and apparatus May. 7, 1996
5479035 Ionic liquid-channel charge-coupled device Dec. 26, 1995
5401990 Read-only memory device Mar. 28, 1995
5374834 Ionic liquid-channel charge-coupled device Dec. 20, 1994
5309004 Heterostructure acoustic charge transport device having electron and hole transport May. 3, 1994
5250824 Ultra low-noise charge coupled device Oct. 5, 1993
5223726 Semiconductor device for charge transfer device Jun. 29, 1993
5214683 Charge detecting device controlling reset transistor operation May. 25, 1993
5191398 Charge transfer device producing a noise-free output Mar. 2, 1993
5189498 Charge coupled device Feb. 23, 1993
5175602 Pseudo bi-phase charge coupled device having narrow channel effect Dec. 29, 1992
5126811 Charge transfer device with electrode structure of high transfer efficiency Jun. 30, 1992

1 2 3

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