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Class Information
Number: 257/213
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device
Description: Subject matter comprising a field effect transistor, in which the density of electrical charge (electrons or holes) in a semiconductor region is controlled by a voltage applied to an adjacent region or electrode which in operation is prevented from conducting direct electrical current to or from the semiconductor region by an insulator or barrier region.










Sub-classes under this class:

Class Number Class Name Patents
257/214 Charge injection device 114
257/215 Charge transfer device 237
257/288 Having insulated electrode (e.g., mosfet, mos diode) 1,826
257/256 Junction field effect transistor (unipolar transistor) 228
257/252 Responsive to non-optical, non-electrical signal 186
257/255 With current flow along specified crystal axis (e.g., axis of maximum carrier mobility) 141


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12

Patent Number Title Of Patent Date Issued
5801411 Integrated capacitor with reduced voltage/temperature drift Sep. 1, 1998
5798555 Enhancement-depletion logic based on Ge mosfets Aug. 25, 1998
5679968 Transistor having reduced hot carrier implantation Oct. 21, 1997
5663570 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip Sep. 2, 1997
5640023 Spacer-type thin-film polysilicon transistor for low-power memory devices Jun. 17, 1997
5610424 Metal oxide semiconductor field effect transistor Mar. 11, 1997
5583384 Method and apparatus for connecting and disconnecting a power field effect transistor Dec. 10, 1996
5563430 Gate array base cell Oct. 8, 1996
5532502 Conductivity-modulated-type MOSFET Jul. 2, 1996
5498886 Circuit module redundancy architecture Mar. 12, 1996
5481485 Effective channel length simulation using a single sample transistor Jan. 2, 1996
5478526 Nozzle-type analysis apparatus Dec. 26, 1995
5479034 Method of making gate array base cell Dec. 26, 1995
5455441 Semiconductor device having a structure for accelerating carriers Oct. 3, 1995
5447907 Superconducting device with c-axis channel and a-axis source and drain having a continuous crystal structure Sep. 5, 1995
5393683 Method of making semiconductor devices having two-layer gate structure Feb. 28, 1995
5378905 Ferroelectric field effect transistor with fluoride buffer and IV-VI ferroelectric Jan. 3, 1995
5331192 Semiconductor device Jul. 19, 1994
5308999 MOS FET having a thin film SOI structure May. 3, 1994
5298444 Method for manufacturing a field effect transistor Mar. 29, 1994
5296726 High value resistive load for an integrated circuit Mar. 22, 1994
5256888 Transistor device apparatus employing free-space electron emission from a diamond material surface Oct. 26, 1993
5198880 Semiconductor integrated circuit and method of making the same Mar. 30, 1993
5192988 Semiconductor integrated circuit device produced by charged-particle etching Mar. 9, 1993
5132806 Semiconductor integrated circuit device Jul. 21, 1992
5077596 Semiconductor device Dec. 31, 1991
4901131 Conductivity modulated metal oxide semiconductor field effect transistor Feb. 13, 1990
4885623 Distributed channel-bipolar device Dec. 5, 1989
4829349 Transistor having voltage-controlled thermionic emission May. 9, 1989
4814835 Active load type of current source and method of making it Mar. 21, 1989
4609833 Simple NMOS voltage reference circuit Sep. 2, 1986
4183041 Self biasing of a field effect transistor mounted in a flip-chip carrier Jan. 8, 1980
4089712 Epitaxial process for the fabrication of a field effect transistor having improved threshold stability May. 16, 1978

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