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Class Information
Number: 257/212
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Conductivity modulation device (e.g., unijunction transistor, double-base diode, conductivity-modulated transistor)
Description: Subject matter wherein the active solid-state device has a high resistivity semiconductor region of one conductivity type having a region of opposite conductivity type forming a pn junction with a central portion of the high resistivity layer, with structural means provided to forward bias the pn junction to inject minority carriers into the high resistivity region to increase its conductivity through conductivity modulation.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
4782372 Lateral conductivity modulated MOSFET Nov. 1, 1988
4698901 Mesa semiconductor device Oct. 13, 1987
4680604 Conductivity modulated MOS transistor device Jul. 14, 1987
4672407 Conductivity modulated MOSFET Jun. 9, 1987
4510517 Electronically controlled variable semiconductor resistor Apr. 9, 1985
4485392 Lateral junction field effect transistor device Nov. 27, 1984
4427989 High density memory cell Jan. 24, 1984
4426655 Memory cell resistor device Jan. 17, 1984
4292644 Control of valley current in a unijunction transistor by electron irradiation Sep. 29, 1981
4230791 Control of valley current in a unijunction transistor by electron irradiation Oct. 28, 1980
3936856 Space-charge-limited integrated circuit structure Feb. 3, 1976

1 2 3

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