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Class Information
Number: 257/21
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Light responsive structure
Description: Subject matter wherein absorption of light (ultraviolet, visible, or infrared) by a superlattice active layer or junction causes a change in the current-voltage characteristic of the device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432537 |
Avalanche photodiode structure |
Oct. 7, 2008 |
| 7432524 |
Integrated circuit comprising an active optical device having an energy band engineered superlattice |
Oct. 7, 2008 |
| 7423284 |
Light emitting device, method for making the same, and nitride semiconductor substrate |
Sep. 9, 2008 |
| 7415185 |
Buried-waveguide-type light receiving element and manufacturing method thereof |
Aug. 19, 2008 |
| 7399988 |
Photodetecting device and method of manufacturing the same |
Jul. 15, 2008 |
| 7397066 |
Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
Jul. 8, 2008 |
| 7397067 |
Microdisplay packaging system |
Jul. 8, 2008 |
| 7378151 |
Semiconductor nanoparticle, and a process of manufacturing the same |
May. 27, 2008 |
| 7378680 |
Migration enhanced epitaxy fabrication of quantum wells |
May. 27, 2008 |
| 7372068 |
QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions |
May. 13, 2008 |
| 7358525 |
Quantum dots of group IV semiconductor materials |
Apr. 15, 2008 |
| 7348583 |
Wavelength stabilized light source |
Mar. 25, 2008 |
| 7349603 |
Optical arrangement with two optical inputs/outputs and production methods |
Mar. 25, 2008 |
| 7294848 |
Light-emitting Group IV semiconductor devices |
Nov. 13, 2007 |
| 7291858 |
QWIP with tunable spectral response |
Nov. 6, 2007 |
| 7282798 |
Spontaneous emission enhanced heat transport method and structures for cooling, sensing, and power generation |
Oct. 16, 2007 |
| 7279699 |
Integrated circuit comprising a waveguide having an energy band engineered superlattice |
Oct. 9, 2007 |
| 7276724 |
Series interconnected optoelectronic device module assembly |
Oct. 2, 2007 |
| 7271405 |
Intersubband detector with avalanche multiplier region |
Sep. 18, 2007 |
| 7268364 |
Hybrid devices |
Sep. 11, 2007 |
| 7262429 |
Thz detection employing modulation doped quantum well device structures |
Aug. 28, 2007 |
| 7253432 |
Heterojunction far infrared photodetector |
Aug. 7, 2007 |
| 7253522 |
Integrated capacitor for RF applications with Ta adhesion layer |
Aug. 7, 2007 |
| 7244959 |
Detection of electromagnetic radiation using micromechanical multiple quantum wells structures |
Jul. 17, 2007 |
| 7238960 |
QWIP with enhanced optical coupling |
Jul. 3, 2007 |
| 7238972 |
Photodetector |
Jul. 3, 2007 |
| 7227177 |
Doped semiconductor nanocrystals |
Jun. 5, 2007 |
| 7226871 |
Method for forming a silicon oxynitride layer |
Jun. 5, 2007 |
| 7217926 |
Systems involving voltage-tunable quantum-well infrared photodetectors (QWIPs) and related methods |
May. 15, 2007 |
| 7217951 |
Detector with tunable spectral response |
May. 15, 2007 |
| 7214971 |
Semiconductor light-receiving device |
May. 8, 2007 |
| 7211821 |
Devices with optical gain in silicon |
May. 1, 2007 |
| 7211820 |
Quantum well sensor having spatially separated sensing columns |
May. 1, 2007 |
| 7205563 |
QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions |
Apr. 17, 2007 |
| 7202511 |
Near-infrared visible light photon counter |
Apr. 10, 2007 |
| 7195723 |
Colloidal solutions and nanocomposites of electrides and alkalides and methods of use |
Mar. 27, 2007 |
| 7196349 |
Resonant cavity enhanced multi-quantum well light modulator and detector |
Mar. 27, 2007 |
| 7179680 |
Method for producing an optoelectronic component |
Feb. 20, 2007 |
| 7180066 |
Infrared detector composed of group III-V nitrides |
Feb. 20, 2007 |
| 7180648 |
Electro-absorption modulator device and methods for fabricating the same |
Feb. 20, 2007 |
| 7170085 |
Frequency selective terahertz radiation detector |
Jan. 30, 2007 |
| 7169647 |
Connection between a semiconductor chip and an external conductor structure and method for producing it |
Jan. 30, 2007 |
| 7161170 |
Doped-absorber graded transition enhanced multiplication avalanche photodetector |
Jan. 9, 2007 |
| 7157741 |
Silicon optoelectronic device and optical signal input and/or output apparatus using the same |
Jan. 2, 2007 |
| 7148529 |
Semiconductor package |
Dec. 12, 2006 |
| 7135698 |
Multi-spectral infrared super-pixel photodetector and imager |
Nov. 14, 2006 |
| 7119359 |
Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures |
Oct. 10, 2006 |
| 7115925 |
Image sensor and pixel having an optimized floating diffusion |
Oct. 3, 2006 |
| 7109529 |
Light-emitting semiconductor device using group III nitride compound |
Sep. 19, 2006 |
| 7106494 |
Controlling resonant cells of a composite material |
Sep. 12, 2006 |
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