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Class Information
Number: 257/201
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Between different group iv-vi or ii-vi or iii-v compounds other than gaas/gaalas
Description: Subject matter wherein the heterojunction forms a boundary between different group IV-VI or group II-VI or group III-V compounds other than GaAs/GaAlAs.










Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8710551 High electron mobility transistor and manufacturing method thereof Apr. 29, 2014
8692294 Semiconductor devices with field plates Apr. 8, 2014
8680581 Method for producing group III nitride semiconductor and template substrate Mar. 25, 2014
8674382 Semiconductor light emitting device comprising heterojunction Mar. 18, 2014
8674398 Group III nitride semiconductor light emitting device and production method thereof, and lamp Mar. 18, 2014
8664696 Nitride semiconductor device Mar. 4, 2014
8659053 Semiconductor light detecting element Feb. 25, 2014
8653563 Semiconductor device Feb. 18, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8633519 Group III nitride semiconductor device, production method therefor, power converter Jan. 21, 2014
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8610175 Semiconductor device and manufacturing method thereof Dec. 17, 2013
8604519 Self-aligned III-V field effect transistor (FET) and integrated circuit (IC) chip Dec. 10, 2013
8598594 Semiconductor device and its fabrication method Dec. 3, 2013
8586859 Wafer level interconnection of inverted metamorphic multijunction solar cells Nov. 19, 2013
8575471 Lattice matched semiconductor growth on crystalline metallic substrates Nov. 5, 2013
8575655 Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering Nov. 5, 2013
8575656 Semiconductor device having nitride layers Nov. 5, 2013
8575660 Group III-V semiconductor device with strain-relieving interlayers Nov. 5, 2013
8569800 Field effect transistor Oct. 29, 2013
RE44538 Indium gallium nitride channel high electron mobility transistors, and method of making the same Oct. 15, 2013
8557644 Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device Oct. 15, 2013
8558242 Vertical GaN-based metal insulator semiconductor FET Oct. 15, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8530257 Band offset in alingap based light emitters to improve temperature performance Sep. 10, 2013
8519443 Method for making a heterojunction bipolar transistor Aug. 27, 2013
8519380 Low thermal conductivity material Aug. 27, 2013
8497553 Semiconductor device Jul. 30, 2013
8482037 Gated AlGaN/GaN Schottky device Jul. 9, 2013
8476639 Group III nitride semiconductor and group III nitride semiconductor structure Jul. 2, 2013
8450776 Epitaxial devices May. 28, 2013
8450774 High performance power switch May. 28, 2013
8441037 Semiconductor device having a thin film stacked structure May. 14, 2013
8426883 Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit Apr. 23, 2013
8421089 Light emitting device Apr. 16, 2013
8415684 LED device with improved thermal performance Apr. 9, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8405128 Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition Mar. 26, 2013
8373200 Nitride based semiconductor device and method for manufacturing of the same Feb. 12, 2013
8350298 Hybrid material inversion mode GAA CMOSFET Jan. 8, 2013
8344395 Light-emitting diode and manufacturing method thereof Jan. 1, 2013
8330187 GaN-based field effect transistor Dec. 11, 2012
8330036 Method of fabrication and structure for multi-junction solar cell formed upon separable substrate Dec. 11, 2012
8319253 Semiconductor light-emitting device Nov. 27, 2012
8304790 Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor Nov. 6, 2012
8299565 Semiconductor nanowires having mobility-optimized orientations Oct. 30, 2012
8299564 Diffusion regions having different depths Oct. 30, 2012
8298840 Dual sided processing and devices based on freestanding nitride and zinc oxide films Oct. 30, 2012
8288798 Step doping in extensions of III-V family semiconductor devices Oct. 16, 2012
8269259 Gated AlGaN/GaN heterojunction Schottky device Sep. 18, 2012

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