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Class Information
Number: 257/200
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., ge (group iv) - gaas (group iii-v) or inp (group iii-v) - cdte (group ii-vi))
Description: Subject matter wherein the heterojunction is formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., Ge (group IV) - GaAs (group III-V) or InP (group III-V) - CdTe (group II-VI)).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619283 |
Methods of fabricating glass-based substrates and apparatus employing same |
Nov. 17, 2009 |
| 7608865 |
Club extension to a T-gate high electron mobility transistor |
Oct. 27, 2009 |
| 7601995 |
Integrated circuit having resistive memory cells |
Oct. 13, 2009 |
| 7598540 |
High performance CMOS devices comprising gapped dual stressors with dielectric gap fillers, and methods of fabricating the same |
Oct. 6, 2009 |
| 7579626 |
Silicon carbide layer on diamond substrate for supporting group III nitride heterostructure device |
Aug. 25, 2009 |
| 7579631 |
Variable breakdown characteristic diode |
Aug. 25, 2009 |
| 7576372 |
Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer |
Aug. 18, 2009 |
| 7576351 |
Nitride semiconductor light generating device |
Aug. 18, 2009 |
| 7569847 |
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
Aug. 4, 2009 |
| 7566922 |
Field effect transistor with suitable source, drain and channel materials and integrated circuit comprising same |
Jul. 28, 2009 |
| 7564076 |
Semiconductor device and manufacturing method therefor |
Jul. 21, 2009 |
| 7553691 |
Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
Jun. 30, 2009 |
| 7547928 |
AlGaN/GaN high electron mobility transistor devices |
Jun. 16, 2009 |
| 7544997 |
Multi-layer source/drain stressor |
Jun. 9, 2009 |
| 7541624 |
Flat profile structures for bipolar transistors |
Jun. 2, 2009 |
| 7531827 |
Gallium nitride-based light emitting diode and fabrication method thereof |
May. 12, 2009 |
| 7531397 |
Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes |
May. 12, 2009 |
| 7521281 |
Methods of forming phase-changeable memory devices |
Apr. 21, 2009 |
| 7518166 |
Transistor or semiconductor device comprising ohmic contact in an epitaxy substrate |
Apr. 14, 2009 |
| 7508014 |
Field effect transistor including a gate electrode and an additional electrode |
Mar. 24, 2009 |
| 7501710 |
Semiconductor integrated circuit and method of manufacturing the same |
Mar. 10, 2009 |
| 7494927 |
Method of growing electrical conductors |
Feb. 24, 2009 |
| 7495456 |
System and method of determining pulse properties of semiconductor device |
Feb. 24, 2009 |
| 7476914 |
Methods to improve the SiGe heterojunction bipolar device performance |
Jan. 13, 2009 |
| 7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
Dec. 16, 2008 |
| 7465997 |
III-nitride bidirectional switch |
Dec. 16, 2008 |
| 7462893 |
Method of fabricating GaN |
Dec. 9, 2008 |
| 7456421 |
Vertical side wall active pin structures in a phase change memory and manufacturing methods |
Nov. 25, 2008 |
| 7456422 |
Semiconductor device |
Nov. 25, 2008 |
| 7456445 |
Group III nitride semiconductor light emitting device |
Nov. 25, 2008 |
| 7442968 |
Chip on film (COF) package having test pad for testing electrical function of chip and method for manufacturing same |
Oct. 28, 2008 |
| 7442569 |
Vertical GaN-based LED and method of manufacturing the same |
Oct. 28, 2008 |
| 7436004 |
Semiconductor device |
Oct. 14, 2008 |
| 7436035 |
Method of fabricating a field effect transistor structure with abrupt source/drain junctions |
Oct. 14, 2008 |
| 7420203 |
Organic semiconductor element |
Sep. 2, 2008 |
| 7420261 |
Bulk nitride mono-crystal including substrate for epitaxy |
Sep. 2, 2008 |
| 7417248 |
Transistor with shallow germanium implantation region in channel |
Aug. 26, 2008 |
| 7407859 |
Compound semiconductor device and its manufacture |
Aug. 5, 2008 |
| 7405420 |
Method and system for chalcogenide-based nanowire memory |
Jul. 29, 2008 |
| 7402845 |
Cascoded rectifier package |
Jul. 22, 2008 |
| 7403256 |
Flat panel display and drive chip thereof |
Jul. 22, 2008 |
| 7394114 |
Semiconductor device and manufacturing method therefor |
Jul. 1, 2008 |
| 7378690 |
Method for forming patterns on a semiconductor device using a lift off technique |
May. 27, 2008 |
| 7368763 |
Semiconductor device and manufacturing method thereof |
May. 6, 2008 |
| 7365375 |
Organic-framework zeolite interlayer dielectrics |
Apr. 29, 2008 |
| 7361521 |
Method of manufacturing vertical GaN-based light emitting diode |
Apr. 22, 2008 |
| 7355216 |
Fluidic nanotubes and devices |
Apr. 8, 2008 |
| 7352030 |
Semiconductor devices with buried isolation regions |
Apr. 1, 2008 |
| 7345327 |
Bipolar transistor |
Mar. 18, 2008 |
| 7339255 |
Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes |
Mar. 4, 2008 |
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