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Class Information
Number: 257/2
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device > Bulk effect switching in amorphous material
Description: Subject matter wherein the bulk material is an amorphous material, i.e., one in which active solid material is non-crystalline in the sense that (1) there is either complete disorder in the arrangement of atoms/mole or molecules of the material or (2) there is an absence of any long range structural order that is detectable by electron or X-ray diffraction patterns of the material and the device is used as an electronic switch.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619237 |
Programmable resistive memory cell with self-forming gap |
Nov. 17, 2009 |
| 7619247 |
Structure for amorphous carbon based non-volatile memory |
Nov. 17, 2009 |
| 7619311 |
Memory cell device with coplanar electrode surface and method |
Nov. 17, 2009 |
| 7615769 |
Nonvolatile memory device and fabrication method thereof |
Nov. 10, 2009 |
| 7615770 |
Integrated circuit having an insulated memory |
Nov. 10, 2009 |
| 7615771 |
Memory array having memory cells formed from metallic material |
Nov. 10, 2009 |
| 7612359 |
Microelectronic devices using sacrificial layers and structures fabricated by same |
Nov. 3, 2009 |
| 7612358 |
Nonvolatile nanochannel memory device using mesoporous material |
Nov. 3, 2009 |
| 7608849 |
Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements |
Oct. 27, 2009 |
| 7608850 |
Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same |
Oct. 27, 2009 |
| 7608851 |
Switch array circuit and system using programmable via structures with phase change materials |
Oct. 27, 2009 |
| 7606056 |
Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured |
Oct. 20, 2009 |
| 7606064 |
Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device |
Oct. 20, 2009 |
| 7598512 |
Thin film fuse phase change cell with thermal isolation layer and manufacturing method |
Oct. 6, 2009 |
| 7599216 |
Phase change memory devices and fabrication methods thereof |
Oct. 6, 2009 |
| 7592617 |
Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method |
Sep. 22, 2009 |
| 7589344 |
Semiconductor device and method of producing the same |
Sep. 15, 2009 |
| 7589367 |
Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines |
Sep. 15, 2009 |
| 7586777 |
Resistance variable memory with temperature tolerant materials |
Sep. 8, 2009 |
| 7582890 |
Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof |
Sep. 1, 2009 |
| 7579616 |
Four-terminal programmable via-containing structure and method of fabricating same |
Aug. 25, 2009 |
| 7579613 |
Thin film fuse phase change RAM and manufacturing method |
Aug. 25, 2009 |
| 7579612 |
Resistive memory device having enhanced resist ratio and method of manufacturing same |
Aug. 25, 2009 |
| 7579611 |
Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide |
Aug. 25, 2009 |
| 7575776 |
Reflowing of a phase changeable memory element to close voids therein |
Aug. 18, 2009 |
| 7576350 |
Programmable resistance memory element with multi-regioned contact |
Aug. 18, 2009 |
| 7577024 |
Streaming mode programming in phase change memories |
Aug. 18, 2009 |
| 7572666 |
Reduced area intersection between electrode and programming element |
Aug. 11, 2009 |
| 7573058 |
Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories |
Aug. 11, 2009 |
| 7570512 |
Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same |
Aug. 4, 2009 |
| 7569844 |
Memory cell sidewall contacting side electrode |
Aug. 4, 2009 |
| 7566895 |
Phase change memory device and method for fabricating the same |
Jul. 28, 2009 |
| 7560721 |
Phase change material with filament electrode |
Jul. 14, 2009 |
| 7550756 |
Semiconductor memory |
Jun. 23, 2009 |
| 7551473 |
Programmable resistive memory with diode structure |
Jun. 23, 2009 |
| 7551476 |
Resistive memory having shunted memory cells |
Jun. 23, 2009 |
| 7547906 |
Multi-functional chalcogenide electronic devices having gain |
Jun. 16, 2009 |
| 7545667 |
Programmable via structure for three dimensional integration technology |
Jun. 9, 2009 |
| 7541608 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells |
Jun. 2, 2009 |
| 7541607 |
Electrically rewritable non-volatile memory element and method of manufacturing the same |
Jun. 2, 2009 |
| 7538338 |
Memory using variable tunnel barrier widths |
May. 26, 2009 |
| 7534647 |
Damascene phase change RAM and manufacturing method |
May. 19, 2009 |
| 7531823 |
Electron device, integrated electron device using same, and operating method using same |
May. 12, 2009 |
| 7531824 |
High value inductor with conductor surrounded by high permeability polymer formed on a semiconductor substrate |
May. 12, 2009 |
| 7531825 |
Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
May. 12, 2009 |
| 7529123 |
Method of operating a multi-terminal electronic device |
May. 5, 2009 |
| 7528401 |
Agglomeration elimination for metal sputter deposition of chalcogenides |
May. 5, 2009 |
| 7525117 |
Chalcogenide devices and materials having reduced germanium or telluruim content |
Apr. 28, 2009 |
| 7521704 |
Memory device using multi-layer with a graded resistance change |
Apr. 21, 2009 |
| 7521705 |
Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
Apr. 21, 2009 |
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