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Class Information
Number: 257/2
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device > Bulk effect switching in amorphous material
Description: Subject matter wherein the bulk material is an amorphous material, i.e., one in which active solid material is non-crystalline in the sense that (1) there is either complete disorder in the arrangement of atoms/mole or molecules of the material or (2) there is an absence of any long range structural order that is detectable by electron or X-ray diffraction patterns of the material and the device is used as an electronic switch.










Sub-classes under this class:

Class Number Class Name Patents
257/5 In array 739
257/3 With means to localize region of conduction (e.g., "pore" structure) 812
257/4 With specified electrode composition or configuration 1,215


Patents under this class:

Patent Number Title Of Patent Date Issued
8710480 Phase-change memory device having multiple diodes Apr. 29, 2014
8710479 Semiconductor devices having multi-width isolation layer structures Apr. 29, 2014
8710478 Nonvolatile semiconductor storage device and a manufacturing method thereof Apr. 29, 2014
8705265 Ionic devices containing a membrane between layers Apr. 22, 2014
8704203 Transition metal oxide bilayers Apr. 22, 2014
8693232 Non-volatile memory cell including a resistivity change material Apr. 8, 2014
8692225 Resistive memory device and fabrication method thereof Apr. 8, 2014
8692222 Nonvolatile memory element and method of manufacturing the nonvolatile memory element Apr. 8, 2014
8686394 Semiconductor constructions and memory arrays Apr. 1, 2014
8686391 Pore phase change material cell fabricated from recessed pillar Apr. 1, 2014
8686389 Diffusion barrier layer for resistive random access memory cells Apr. 1, 2014
8686388 Non-volatile resistive sense memory with improved switching Apr. 1, 2014
8686387 Semiconductor memory device and method for manufacturing the same Apr. 1, 2014
8686386 Nonvolatile memory device using a varistor as a current limiter element Apr. 1, 2014
8686385 Phase-change random access memory device and method of manufacturing the same Apr. 1, 2014
8686384 Memory device and method for manufacturing the same Apr. 1, 2014
8685786 Method of manufacturing a semiconductor memory device having a resistance change memory layer Apr. 1, 2014
8681530 Nonvolatile memory device having a current limiting element Mar. 25, 2014
8680505 Semiconductor memory device Mar. 25, 2014
8680504 Diamond type quad-resistor cells of PRAM Mar. 25, 2014
8680502 Amorphous semiconductor layer memory device Mar. 25, 2014
8680501 Memory cell with post deposition method for regrowth of crystalline phase change material Mar. 25, 2014
8680500 Phase change memory devices having buried metal silicide patterns Mar. 25, 2014
8680499 Memory cells Mar. 25, 2014
8674336 Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays Mar. 18, 2014
8674333 Variable-resistance material memories and methods Mar. 18, 2014
8674332 RRAM device with an embedded selector structure and methods of making same Mar. 18, 2014
8673692 Charging controlled RRAM device, and methods of making same Mar. 18, 2014
8664631 Nonvolatile memory device Mar. 4, 2014
8659002 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same Feb. 25, 2014
8659001 Defect gradient to boost nonvolatile memory performance Feb. 25, 2014
8659000 Amorphous semiiconductor layer memory device Feb. 25, 2014
8658999 Semiconductor device Feb. 25, 2014
8658998 Semiconductor storage device Feb. 25, 2014
8658997 Bipolar multistate nonvolatile memory Feb. 25, 2014
8658510 Processing phase change material to improve programming speed Feb. 25, 2014
8658476 Low temperature P+ polycrystalline silicon material for non-volatile memory device Feb. 25, 2014
8654430 Electro-absorption modulator and optical semiconductor device Feb. 18, 2014
8653497 Resistive memory Feb. 18, 2014
8653496 Memory cells Feb. 18, 2014
8653494 Integrated circuitry, methods of forming memory cells, and methods of patterning platinum-containing material Feb. 18, 2014
8653493 Variable resistance memory devices and methods of manufacturing the same Feb. 18, 2014
8649213 Multiple bit phase change memory cell Feb. 11, 2014
8648327 Stackable non-volatile resistive switching memory devices Feb. 11, 2014
8648326 Phase change memory electrode with sheath for reduced programming current Feb. 11, 2014
8648324 Glassy carbon nanostructures Feb. 11, 2014
8648323 Nonvolatile memory device and method of fabricating the same Feb. 11, 2014
8642990 Diamond type quad-resistor cells of PRAM Feb. 4, 2014
8642988 Non-volatile memory device Feb. 4, 2014
8642987 Semiconductor device and manufacturing method thereof Feb. 4, 2014











 
 
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