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Class Information
Number: 257/198
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Bipolar transistor > Wide band gap emitter
Description: Subject matter wherein the bipolar transistor with an active heterojunction region involves a charge carrier emitter region made of a semiconductor material having an energy gap between its conduction and valence bands which is greater than the energy gap of the base region forming a heterojunction therewith.










Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8674382 Semiconductor light emitting device comprising heterojunction Mar. 18, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
8618551 Semiconductor light emitting device Dec. 31, 2013
8610174 Bipolar transistor with a raised collector pedestal for reduced capacitance Dec. 17, 2013
8592871 Nitride semiconductor device and method of manufacturing nitride semiconductor device Nov. 26, 2013
8557670 SOI lateral bipolar junction transistor having a wide band gap emitter contact Oct. 15, 2013
8541813 Homojunction type high-speed photodiode Sep. 24, 2013
8530933 Photo transistor Sep. 10, 2013
8525233 SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region Sep. 3, 2013
8519443 Method for making a heterojunction bipolar transistor Aug. 27, 2013
8497529 Trench generated device structures and design structures for radiofrequency and BiCMOS integrated circuits Jul. 30, 2013
8395237 Group nitride bipolar transistor Mar. 12, 2013
8377788 SiGe heterojunction bipolar transistor and method of forming a SiGe heterojunction bipolar transistor Feb. 19, 2013
8357953 Bipolar transistor with low resistance base contact Jan. 22, 2013
8309990 Integrated devices on a common compound semiconductor III-V wafer Nov. 13, 2012
8293382 Semiconductor light-emitting device having stacked transparent electrodes Oct. 23, 2012
8288797 Integrated devices on a common compound semiconductor III-V wafer Oct. 16, 2012
8242500 Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistor Aug. 14, 2012
8193609 Heterojunction bipolar transistor device with electrostatic discharge ruggedness Jun. 5, 2012
8134142 Tunneling transistor with barrier Mar. 13, 2012
8115280 Four-terminal gate-controlled LVBJTs Feb. 14, 2012
8101973 Transistor Jan. 24, 2012
8084786 Silicided base structure for high frequency transistors Dec. 27, 2011
8018006 Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation Sep. 13, 2011
7994541 Semiconductor device and metal line fabrication method of the same Aug. 9, 2011
7960758 Bipolar transistor and radio frequency amplifier circuit Jun. 14, 2011
RE42423 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Jun. 7, 2011
7939416 Method of making bipolar transistor May. 10, 2011
7935986 Method for forming a bipolar transistor device with self-aligned raised extrinsic base May. 3, 2011
7932541 High performance collector-up bipolar transistor Apr. 26, 2011
7923752 Thin-film crystal wafer having pn junction and method for fabricating the wafer Apr. 12, 2011
7906796 Bipolar device and fabrication method thereof Mar. 15, 2011
7893463 Integrated devices on a common compound semiconductor III-V wafer Feb. 22, 2011
7868335 Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs Jan. 11, 2011
7846806 System and method for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture Dec. 7, 2010
7838375 System and method for providing a polyemit module for a self aligned heterojunction bipolar transistor architecture Nov. 23, 2010
7829917 Layout for self-aligned emitter-base processing Nov. 9, 2010
7825436 Thin film electron source Nov. 2, 2010
7821037 Heterojunction bipolar transistor Oct. 26, 2010
7804109 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same Sep. 28, 2010
7791108 Nanowire tunneling transistor Sep. 7, 2010
7759702 Hetero-junction bipolar transistor (HBT) and structure thereof Jul. 20, 2010
7728359 Nitride semiconductor based bipolar transistor and the method of manufacture thereof Jun. 1, 2010
7728357 Heterojunction bipolar transistor and manufacturing method thereof Jun. 1, 2010
7723198 Integrated semiconductor cascode circuit for high-frequency applications May. 25, 2010
7723754 Ge photodetectors May. 25, 2010
7714361 Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor May. 11, 2010
7701038 High-gain vertex lateral bipolar junction transistor Apr. 20, 2010
7679105 Hetero junction bipolar transistor and method of manufacturing the same Mar. 16, 2010
7652350 Semiconductor device Jan. 26, 2010

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