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Class Information
Number: 257/197
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Bipolar transistor
Description: Subject matter wherein the heterojunction is part of a bipolar transistor, i.e., a transistor structure whose working current passes through semiconductor material of both polarities (p and n) which form a heterojunction portion of the transistor.










Sub-classes under this class:

Class Number Class Name Patents
257/198 Wide band gap emitter 445


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
8710548 Semiconductor device and method for manufacturing the same Apr. 29, 2014
8691654 Semiconductor device having stressor film and method of manufacturing semiconductor device Apr. 8, 2014
8692244 Semiconductor device Apr. 8, 2014
8692295 Transistor with InGaAsP collector region and integrated opto-electronic devices employing same Apr. 8, 2014
8674382 Semiconductor light emitting device comprising heterojunction Mar. 18, 2014
8669617 Multi-gate transistors Mar. 11, 2014
8664697 Transistor device Mar. 4, 2014
8664698 Bipolar transistor and method with recessed base electrode Mar. 4, 2014
8653558 Semiconductor device and method of making Feb. 18, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
8637959 Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the same Jan. 28, 2014
8629509 High voltage insulated gate bipolar transistors with minority carrier diverter Jan. 14, 2014
8623749 Reduction of stored charge in the base region of a bipolar transistor to improve switching speed Jan. 7, 2014
8610174 Bipolar transistor with a raised collector pedestal for reduced capacitance Dec. 17, 2013
8598629 High-frequency device including high-frequency switching circuit Dec. 3, 2013
8592902 Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure Nov. 26, 2013
8592870 Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistor Nov. 26, 2013
8575659 Carbon-beryllium combinationally doped semiconductor Nov. 5, 2013
8569866 Hybrid-integrated lateral bipolar transistor and CMOS transistor and method for manufacturing the same Oct. 29, 2013
8569865 Integrated circuit and production method Oct. 29, 2013
8564022 Power device and method for manufacturing the same Oct. 22, 2013
8557670 SOI lateral bipolar junction transistor having a wide band gap emitter contact Oct. 15, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8558282 Germanium lateral bipolar junction transistor Oct. 15, 2013
8546939 RF module including control IC without the aid of a relay pad Oct. 1, 2013
8546850 Superjunction collectors for transistors and semiconductor devices Oct. 1, 2013
8525232 Semiconductor structure having a wetting layer Sep. 3, 2013
8524551 Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistor Sep. 3, 2013
8525233 SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region Sep. 3, 2013
8519405 Thin film transistor, organic light emitting diode (OLED) display including the same, and manufacturing methods of them Aug. 27, 2013
8519443 Method for making a heterojunction bipolar transistor Aug. 27, 2013
8513706 Heterojunction bipolar transistors with reduced base resistance Aug. 20, 2013
8501572 Spacer structure for transistor device and method of manufacturing same Aug. 6, 2013
8497529 Trench generated device structures and design structures for radiofrequency and BiCMOS integrated circuits Jul. 30, 2013
8492794 Vertical polysilicon-germanium heterojunction bipolar transistor Jul. 23, 2013
8455269 Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices Jun. 4, 2013
8455975 Parasitic PNP bipolar transistor in a silicon-germanium BiCMOS process Jun. 4, 2013
8450777 Method for manufacturing a reverse-conducting insulated gate bipolar transistor May. 28, 2013
8445370 Trench junction barrier controlled Schottky May. 21, 2013
8441075 Power semiconductor apparatus having a silicon power semiconductor device and a wide gap semiconductor device May. 14, 2013
8441084 Horizontal polysilicon-germanium heterojunction bipolar transistor May. 14, 2013
8441128 Semiconductor arrangement May. 14, 2013
8436399 Semiconductor device May. 7, 2013
8431966 Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby Apr. 30, 2013
8420475 Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process Apr. 16, 2013
8421124 High-beta bipolar junction transistor and method of manufacture Apr. 16, 2013
RE44140 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Apr. 9, 2013
8415763 Tunable semiconductor device Apr. 9, 2013
8415762 Semiconductor device for performing photoelectric conversion Apr. 9, 2013
8415746 Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor Apr. 9, 2013

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