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Class Information
Number: 257/196
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Both semiconductors of the heterojunction are the same conductivity type (i.e., either n or p)
Description: Subject matter wherein the semiconductor materials which define the heterojunction are of the same conductivity type (e.g., both p or both n).

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8674382 Semiconductor light emitting device comprising heterojunction Mar. 18, 2014
8575655 Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering Nov. 5, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8530995 High operating temperature split-off band infrared detector with double and/or graded barrier Sep. 10, 2013
8497553 Semiconductor device Jul. 30, 2013
8497552 Semiconductor devices with current shifting regions and related methods Jul. 30, 2013
8441035 Field effect transistor and method of manufacturing the same May. 14, 2013
8431963 Field-effect transistor Apr. 30, 2013
8399910 Sub-pixel NBN detector Mar. 19, 2013
8362520 Sub-pixel nBn detector Jan. 29, 2013
8304790 Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor Nov. 6, 2012
8306495 Semiconductor device Nov. 6, 2012
8294164 Light-emitting device using clad layer consisting of asymmetrical units Oct. 23, 2012
8288798 Step doping in extensions of III-V family semiconductor devices Oct. 16, 2012
8283699 GaN based HEMTs with buried field plates Oct. 9, 2012
8274098 Field effect transistor, logic circuit including the same and methods of manufacturing the same Sep. 25, 2012
8265582 Semiconductor device Sep. 11, 2012
8263449 Method of manufacturing high electron mobility transistor Sep. 11, 2012
8237245 Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor device Aug. 7, 2012
8188553 Semiconductor device and method for making the same May. 29, 2012
8134180 Nitride semiconductor device with a vertical channel and method for producing the nitride semiconductor device Mar. 13, 2012
8124983 Power transistor Feb. 28, 2012
8101972 Nitride semiconductor device and method for fabricating the same Jan. 24, 2012
8072001 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same Dec. 6, 2011
8044435 Sub-pixel nBn detector Oct. 25, 2011
8022390 Lateral conduction infrared photodetector Sep. 20, 2011
8017977 Field effect transistor having recessed gate in compositional graded layer Sep. 13, 2011
8004012 Unipolar semiconductor photodetector with suppressed dark current and method for producing the same Aug. 23, 2011
7928555 Stack semiconductor package including an interposer chip having an imposed diode or capacitor Apr. 19, 2011
7902562 Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof Mar. 8, 2011
7868355 Hetero field effect transistor and manufacturing method thereof Jan. 11, 2011
7863649 Nitride semiconductor device and method for fabricating the same Jan. 4, 2011
7825433 MIS-type semiconductor device Nov. 2, 2010
7781801 Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes Aug. 24, 2010
7723749 Strained semiconductor structures May. 25, 2010
7663861 Semiconductor device and method of manufacturing the semiconductor device Feb. 16, 2010
7638820 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Dec. 29, 2009
7601985 Semiconductor light-emitting device Oct. 13, 2009
7576373 Nitride semiconductor device and method for manufacturing the same Aug. 18, 2009
7564075 Semiconductor device Jul. 21, 2009
7518166 Transistor or semiconductor device comprising ohmic contact in an epitaxy substrate Apr. 14, 2009
7508014 Field effect transistor including a gate electrode and an additional electrode Mar. 24, 2009
7485512 Method of manufacturing an adaptive AIGaN buffer layer Feb. 3, 2009
7465976 Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions Dec. 16, 2008
7217960 Semiconductor device May. 15, 2007
7109567 Semiconductor device and method of manufacturing such device Sep. 19, 2006
7098484 Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device Aug. 29, 2006
7078742 Strained-channel semiconductor structure and method of fabricating the same Jul. 18, 2006
7053418 Nitride based semiconductor device May. 30, 2006
7038250 Semiconductor device suited for a high frequency amplifier May. 2, 2006

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