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Class Information
Number: 257/195
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Field effect transistor > Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt)) > Combined with diverse type device
Description: Subject matter wherein the heterojunction field effect transistor with impurity dopant on the side of the heterojunction with lower affinity for the charge carriers supplied by the dopant is combined with another electronic device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432538 |
Field-effect transistor |
Oct. 7, 2008 |
| 7420226 |
Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates |
Sep. 2, 2008 |
| 7407859 |
Compound semiconductor device and its manufacture |
Aug. 5, 2008 |
| 7382001 |
Enhancement mode III-nitride FET |
Jun. 3, 2008 |
| 7361536 |
Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor |
Apr. 22, 2008 |
| 7339206 |
Field effect transistor including a group III-V compound semiconductor layer |
Mar. 4, 2008 |
| 7329894 |
Semiconductor laser device and semiconductor optical modulator |
Feb. 12, 2008 |
| 7329910 |
Semiconductor substrates and field effect transistor constructions |
Feb. 12, 2008 |
| 7301181 |
Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminum |
Nov. 27, 2007 |
| 7285806 |
Semiconductor device having an active region formed from group III nitride |
Oct. 23, 2007 |
| 7279697 |
Field effect transistor with enhanced insulator structure |
Oct. 9, 2007 |
| 7262446 |
Semiconductor device and process for production thereof |
Aug. 28, 2007 |
| 7250641 |
Nitride semiconductor device |
Jul. 31, 2007 |
| 7250643 |
Semiconductor device and method of manufacturing the same |
Jul. 31, 2007 |
| 7230284 |
Insulating gate AlGaN/GaN HEMT |
Jun. 12, 2007 |
| 7196362 |
Field-effect transistor, semiconductor device including field-effect transistor, and method for manufacturing field-effect transistor and semiconductor device |
Mar. 27, 2007 |
| 7183592 |
Field effect transistor |
Feb. 27, 2007 |
| 7183593 |
Heterostructure resistor and method of forming the same |
Feb. 27, 2007 |
| 7071499 |
Heterojunction field effect type semiconductor device having high gate turn-on voltage and low on-resistance and its manufacturing method |
Jul. 4, 2006 |
| 7064359 |
Switching semiconductor device and switching circuit |
Jun. 20, 2006 |
| 7038253 |
GaN-based field effect transistor of a normally-off type |
May. 2, 2006 |
| 7015519 |
Structures and methods for fabricating vertically integrated HBT/FET device |
Mar. 21, 2006 |
| 7009209 |
Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications |
Mar. 7, 2006 |
| 6995407 |
Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices |
Feb. 7, 2006 |
| 6992337 |
Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability |
Jan. 31, 2006 |
| 6972461 |
Channel MOSFET with strained silicon channel on strained SiGe |
Dec. 6, 2005 |
| 6936839 |
Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same |
Aug. 30, 2005 |
| 6924516 |
Semiconductor device |
Aug. 2, 2005 |
| 6908804 |
Bipolar transistor, semiconductor device and method of manufacturing same |
Jun. 21, 2005 |
| 6876012 |
Hetero-bipolar transistor |
Apr. 5, 2005 |
| 6872966 |
Optical semiconductor device |
Mar. 29, 2005 |
| 6872985 |
Waveguide-bonded optoelectronic devices |
Mar. 29, 2005 |
| 6867078 |
Method for forming a microwave field effect transistor with high operating voltage |
Mar. 15, 2005 |
| 6864533 |
MOS field effect transistor with reduced on-resistance |
Mar. 8, 2005 |
| 6853018 |
Semiconductor device having a channel layer, first semiconductor layer, second semiconductor layer, and a conductive impurity region |
Feb. 8, 2005 |
| 6849866 |
High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration |
Feb. 1, 2005 |
| 6849883 |
Strained SOI MOSFET device and method of fabricating same |
Feb. 1, 2005 |
| 6809352 |
Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices |
Oct. 26, 2004 |
| 6797994 |
Double recessed transistor |
Sep. 28, 2004 |
| 6787820 |
Hetero-junction field effect transistor having an InGaAIN cap film |
Sep. 7, 2004 |
| 6787822 |
Heterojunction III-V transistor, in particular HEMT field effect transistor or heterojunction bipolar transistor |
Sep. 7, 2004 |
| 6770902 |
Charge carrier extracting transistor |
Aug. 3, 2004 |
| 6759696 |
Bipolar transistor, semiconductor device and method of manufacturing same |
Jul. 6, 2004 |
| 6724019 |
Multi-layered, single crystal field effect transistor |
Apr. 20, 2004 |
| 6713779 |
Semiconductor device and method of manufacturing the same |
Mar. 30, 2004 |
| 6661039 |
Velocity-cooled hot-electron bolometric mixer/detector |
Dec. 9, 2003 |
| 6653668 |
Radio frequency modules and modules for moving target detection |
Nov. 25, 2003 |
| 6642552 |
Inductive storage capacitor |
Nov. 4, 2003 |
| 6627914 |
Millimeter wave and far-infrared detector |
Sep. 30, 2003 |
| 6605831 |
Field-effect semiconductor device |
Aug. 12, 2003 |
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