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Class Information
Number: 257/194
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Field effect transistor > Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt))
Description: Subject matter wherein the heterojunction field effect transistor has impurity dopant on the side of the heterojunction with lower affinity for the charge carriers (holes or










Sub-classes under this class:

Class Number Class Name Patents
257/195 Combined with diverse type device 244


Patents under this class:

Patent Number Title Of Patent Date Issued
8399912 III-nitride power device with solderable front metal Mar. 19, 2013
8399911 Enhancement mode field effect device and the method of production thereof Mar. 19, 2013
8395187 Compound semiconductor epitaxial substrate and manufacturing method thereof Mar. 12, 2013
8390101 High voltage switching devices and process for forming same Mar. 5, 2013
8390030 Nitride semiconductor device Mar. 5, 2013
8389977 Reverse side engineered III-nitride devices Mar. 5, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8384129 Transistor with enhanced channel charge inducing material layer and threshold voltage control Feb. 26, 2013
8384128 Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same Feb. 26, 2013
8378388 Semiconductor device having a GaN-based semiconductor layer doped with Fe Feb. 19, 2013
8373245 2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same Feb. 12, 2013
8368168 III-V-group compound semiconductor device Feb. 5, 2013
8368120 Hybrid semiconductor device having a GaN transistor and a silicon MOSFET Feb. 5, 2013
8368119 Integrated structure with transistors and schottky diodes and process for fabricating the same Feb. 5, 2013
8350297 Compound semiconductor device and production method thereof Jan. 8, 2013
8350296 Enhancement mode III-nitride device with floating gate and process for its manufacture Jan. 8, 2013
8350295 Device structure including high-thermal-conductivity substrate Jan. 8, 2013
8350293 Field effect transistor and method of manufacturing the same Jan. 8, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8344423 Nitride semiconductor device and method for fabricating the same Jan. 1, 2013
8344422 Semiconductor device Jan. 1, 2013
8344420 Enhancement-mode gallium nitride high electron mobility transistor Jan. 1, 2013
8344419 Compound semiconductor device and manufacturing method of the same Jan. 1, 2013
8343823 Nanowire and larger GaN based HEMTs Jan. 1, 2013
8338862 Semiconductor device Dec. 25, 2012
8338861 III-nitride semiconductor device with stepped gate trench and process for its manufacture Dec. 25, 2012
8330187 GaN-based field effect transistor Dec. 11, 2012
8324037 Fabrication methods for HEMT devices and circuits on compound semiconductor materials Dec. 4, 2012
8318562 Method to increase breakdown voltage of semiconductor devices Nov. 27, 2012
8314447 Semiconductor including lateral HEMT Nov. 20, 2012
8309987 Enhancement mode semiconductor device Nov. 13, 2012
8304812 Terahertz wave radiating element Nov. 6, 2012
8304811 HEMT device and a manufacturing of the HEMT device Nov. 6, 2012
8304810 Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium Nov. 6, 2012
8299499 Field effect transistor Oct. 30, 2012
8299498 Semiconductor device having hetero junction Oct. 30, 2012
8298897 Asymmetric channel MOSFET Oct. 30, 2012
8298840 Dual sided processing and devices based on freestanding nitride and zinc oxide films Oct. 30, 2012
8294181 Compound semiconductor device and method of manufacturing the same Oct. 23, 2012
8293609 Method of manufacturing a transistor device having asymmetric embedded strain elements Oct. 23, 2012
8288796 Semiconductor device Oct. 16, 2012
8283700 Field effect transistor and manufacturing method thereof Oct. 9, 2012
8283699 GaN based HEMTs with buried field plates Oct. 9, 2012
8283673 Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride Oct. 9, 2012
8283672 Semiconductor devices having gallium nitride epilayers on diamond substrates Oct. 9, 2012
8278688 Compound semiconductor device and manufacturing method thereof Oct. 2, 2012
8278687 Semiconductor heterostructures to reduce short channel effects Oct. 2, 2012
8274098 Field effect transistor, logic circuit including the same and methods of manufacturing the same Sep. 25, 2012
8269259 Gated AlGaN/GaN heterojunction Schottky device Sep. 18, 2012
8268707 Gallium nitride for liquid crystal electrodes Sep. 18, 2012











 
 
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