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Class Information
Number: 257/194
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Field effect transistor > Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt))
Description: Subject matter wherein the heterojunction field effect transistor has impurity dopant on the side of the heterojunction with lower affinity for the charge carriers (holes or

Sub-classes under this class:

Class Number Class Name Patents
257/195 Combined with diverse type device 244

Patents under this class:

Patent Number Title Of Patent Date Issued
5285068 Photo-detector and photo-detection method using the same Feb. 8, 1994
5285081 Field effect transistor having quasi one-dimensional electron gas confined under electron resonance Feb. 8, 1994
5285087 Heterojunction field effect transistor Feb. 8, 1994
5285088 High electron mobility transistor Feb. 8, 1994
5283448 MESFET with indium gallium arsenide etch stop Feb. 1, 1994
5276340 Semiconductor integrated circuit having a reduced side gate effect Jan. 4, 1994
5274255 Structure for providing high resolution modulation of voltage potential in the vicinity of a surface Dec. 28, 1993
5272365 Silicon transistor device with silicon-germanium electron gas hetero structure channel Dec. 21, 1993
5272372 High speed non-volatile programmable read only memory device fabricated by using selective doping technology Dec. 21, 1993
5270557 Quantum interference semiconductor device having a quantum point contact and fabrication process thereof Dec. 14, 1993
5262660 High power pseudomorphic gallium arsenide high electron mobility transistors Nov. 16, 1993
5258631 Semiconductor device having a two-dimensional electron gas as an active layer Nov. 2, 1993
5258632 Velocity modulation transistor Nov. 2, 1993
5254863 Semiconductor device such as a high electron mobility transistor Oct. 19, 1993
5250822 Field effect transistor Oct. 5, 1993
5247193 Semiconductor insulated gate device with four electrodes Sep. 21, 1993
5243206 Logic circuit using vertically stacked heterojunction field effect transistors Sep. 7, 1993
5233205 Quantum wave circuit Aug. 3, 1993
5223724 Multiple channel high electron mobility transistor Jun. 29, 1993
5219772 Method for making field effect devices with ultra-short gates Jun. 15, 1993
5214298 Complementary heterostructure field effect transistors May. 25, 1993
5181087 Semiconductor device and method of producing the same Jan. 19, 1993
5172197 Hemt structure with passivated donor layer Dec. 15, 1992
5170230 Semiconductor device and production method thereof Dec. 8, 1992
5164800 Semiconductor device Nov. 17, 1992
5162877 Semiconductor integrated circuit device and method of producing same Nov. 10, 1992
5161235 Field-effect compound semiconductive transistor with GaAs gate to increase barrier height and reduce turn-on threshold Nov. 3, 1992
5153682 HEMT device with doped active layer Oct. 6, 1992
5153688 Method and device for controlling interference of electron waves by light in which a transverse magnetic wave is applied Oct. 6, 1992
5151757 Heterojunction field-effect transistor Sep. 29, 1992
5148245 Semiconductor device having a selectively doped heterostructure Sep. 15, 1992
5144378 High electron mobility transistor Sep. 1, 1992
5144379 Semiconductor device having a group III-V epitaxial semiconductor layer on a substrate Sep. 1, 1992
5140386 High electron mobility transistor Aug. 18, 1992
5124762 GaAs heterostructure metal-insulator-semiconductor integrated circuit technology Jun. 23, 1992
5111255 Buried channel heterojunction field effect transistor May. 5, 1992
5105241 Field effect transistor Apr. 14, 1992
5101245 Field effect transistor and method for making same Mar. 31, 1992
5099295 Compound semiconductor device which utilizes an electron supply layer which has a graded composition so that a constituent varies in percentage composition from one side to the other Mar. 24, 1992
5091759 Heterostructure field effect transistor Feb. 25, 1992
5081512 Electronic devices Jan. 14, 1992
5060030 Pseudomorphic HEMT having strained compensation layer Oct. 22, 1991
5047811 Field effect transistor with channel formed on homojunction interface Sep. 10, 1991
5043777 Power FETS with improved high voltage performance Aug. 27, 1991
5038187 Pseudomorphic MODFET structure having improved linear power performance at microwave frequencies Aug. 6, 1991
5028968 Radiation hard GaAs high electron mobility transistor Jul. 2, 1991
5023671 Microstructures which provide superlattice effects and one-dimensional carrier gas channels Jun. 11, 1991
5023674 Field effect transistor Jun. 11, 1991
5023675 Semiconductor device Jun. 11, 1991
5021857 Two dimensional electron gas semiconductor device Jun. 4, 1991

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